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Hybrid operation of a DMOS transistor is a simple process to implement a high gain lateral bipolar transistor, without complex sub-micrometer processing. A hybrid lateral bipolar operation is obtained in the device by using the diffused channel region as base and connecting it to the gate. Current gain higher than 2000 and a cut-off frequency of 1.6 GHz are also achieved.

Studies on a SIMOX-npn lateral bipolar transistor (LBT) devices reveal that the device has a 2.8 kilo ohm base resistance which is the lowest known for a SIMOX-LBT. The LBT has six mask steps, and a self-aligned nitride spacer provides base definition. The SIMOX-LBT has a high current gain of 40 and a cut off frequency of 3 gigahertz under simulated conditions.

Presents a method for silicon surface preparation prior to wafer bonding by cleaning in sulphuric peroxide mixture (SPM). Effects of SPM modification on silicon surface; Substitution of fluorine by hydroxide groups as a result of water rinse; Measurement of higher contact wave velocities and bond strengths.

Investigates the bonding of hydrophobic silicon surfaces in aqueous and buffered hydrofluoric solutions. Observation of contact wave spontaneity and velocity; Determination of bond strengths by measuring the surface energy; Effect of water rinsing on surface bonding and spontaneity.