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13 results on '"Sonner, M."'

1. Multifractality of wave functions on a Cayley tree: From root to leaves

Author

Sonner, M., Tikhonov, K. S., and Mirlin, A. D.

Subjects
Condensed Matter - Disordered Systems and Neural Networks
Abstract

We explore the evolution of wave-function statistics on a finite Bethe lattice (Cayley tree) from the central site ("root") to the boundary ("leaves"). We show that the eigenfunction moments $P_q=N \left<|\psi|^{2q}(i)\right>$ exhibit a multifractal scaling $P_q\propto N^{-\tau_q}$ with the volume (number of sites) $N$ at $N\to\infty$. The multifractality spectrum $\tau_q$ depends on the strength of disorder and on the parameter $s$ characterizing the position of the observation point $i$ on the lattice. Specifically, $s= r/R$, where $r$ is the distance from the observation point to the root, and $R$ is the "radius" of the lattice. We demonstrate that the exponents $\tau_q$ depend linearly on $s$ and determine the evolution of the spectrum with increasing disorder, from delocalized to the localized phase. Analytical results are obtained for the $n$-orbital model with $n \gg 1$ that can be mapped onto a supersymmetric $\sigma$ model. These results are supported by numerical simulations (exact diagonalization) of the conventional ($n=1$) Anderson tight-binding model.

Published
2017
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4. Noise-resilient edge modes on a chain of superconducting qubits

Author

Mi, X., primary, Sonner, M., additional, Niu, M. Y., additional, Lee, K. W., additional, Foxen, B., additional, Acharya, R., additional, Aleiner, I., additional, Andersen, T. I., additional, Arute, F., additional, Arya, K., additional, Asfaw, A., additional, Atalaya, J., additional, Bardin, J. C., additional, Basso, J., additional, Bengtsson, A., additional, Bortoli, G., additional, Bourassa, A., additional, Brill, L., additional, Broughton, M., additional, Buckley, B. B., additional, Buell, D. A., additional, Burkett, B., additional, Bushnell, N., additional, Chen, Z., additional, Chiaro, B., additional, Collins, R., additional, Conner, P., additional, Courtney, W., additional, Crook, A. L., additional, Debroy, D. M., additional, Demura, S., additional, Dunsworth, A., additional, Eppens, D., additional, Erickson, C., additional, Faoro, L., additional, Farhi, E., additional, Fatemi, R., additional, Flores, L., additional, Forati, E., additional, Fowler, A. G., additional, Giang, W., additional, Gidney, C., additional, Gilboa, D., additional, Giustina, M., additional, Dau, A. G., additional, Gross, J. A., additional, Habegger, S., additional, Harrigan, M. P., additional, Hoffmann, M., additional, Hong, S., additional, Huang, T., additional, Huff, A., additional, Huggins, W. J., additional, Ioffe, L. B., additional, Isakov, S. V., additional, Iveland, J., additional, Jeffrey, E., additional, Jiang, Z., additional, Jones, C., additional, Kafri, D., additional, Kechedzhi, K., additional, Khattar, T., additional, Kim, S., additional, Kitaev, A. Y., additional, Klimov, P. V., additional, Klots, A. R., additional, Korotkov, A. N., additional, Kostritsa, F., additional, Kreikebaum, J. M., additional, Landhuis, D., additional, Laptev, P., additional, Lau, K.-M., additional, Lee, J., additional, Laws, L., additional, Liu, W., additional, Locharla, A., additional, Martin, O., additional, McClean, J. R., additional, McEwen, M., additional, Meurer Costa, B., additional, Miao, K. C., additional, Mohseni, M., additional, Montazeri, S., additional, Morvan, A., additional, Mount, E., additional, Mruczkiewicz, W., additional, Naaman, O., additional, Neeley, M., additional, Neill, C., additional, Newman, M., additional, O’Brien, T. E., additional, Opremcak, A., additional, Petukhov, A., additional, Potter, R., additional, Quintana, C., additional, Rubin, N. C., additional, Saei, N., additional, Sank, D., additional, Sankaragomathi, K., additional, Satzinger, K. J., additional, Schuster, C., additional, Shearn, M. J., additional, Shvarts, V., additional, Strain, D., additional, Su, Y., additional, Szalay, M., additional, Vidal, G., additional, Villalonga, B., additional, Vollgraff-Heidweiller, C., additional, White, T., additional, Yao, Z., additional, Yeh, P., additional, Yoo, J., additional, Zalcman, A., additional, Zhang, Y., additional, Zhu, N., additional, Neven, H., additional, Bacon, D., additional, Hilton, J., additional, Lucero, E., additional, Babbush, R., additional, Boixo, S., additional, Megrant, A., additional, Chen, Y., additional, Kelly, J., additional, Smelyanskiy, V., additional, Abanin, D. A., additional, and Roushan, P., additional

Published
2022
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12. Temporal Entanglement, Quasiparticles, and the Role of Interactions.

Author

Giudice G, Giudici G, Sonner M, Thoenniss J, Lerose A, Abanin DA, and Piroli L

Abstract

In quantum many-body dynamics admitting a description in terms of noninteracting quasiparticles, the Feynman-Vernon influence matrix (IM), encoding the effect of the system on the evolution of its local subsystems, can be analyzed exactly. For discrete dynamics, the temporal entanglement (TE) of the corresponding IM satisfies an area law, suggesting the possibility of an efficient representation of the IM in terms of matrix-product states. A natural question is whether integrable interactions, preserving stable quasiparticles, affect the behavior of the TE. While a simple semiclassical picture suggests a sublinear growth in time, one can wonder whether interactions may lead to violations of the area law. We address this problem by analyzing quantum quenches in a family of discrete integrable dynamics corresponding to the real-time Trotterization of the interacting XXZ Heisenberg model. By means of an analytical solution at the dual-unitary point and numerical calculations for generic values of the system parameters, we provide evidence that, away from the noninteracting limit, the TE displays a logarithmic growth in time, thus violating the area law. Our findings highlight the nontrivial role of interactions, and raise interesting questions on the possibility to efficiently simulate the local dynamics of interacting integrable systems.

Published
2022
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13. Correlated Chemical and Electrically Active Dopant Analysis in Catalyst-Free Si-Doped InAs Nanowires.

Author

Becker J, Hill MO, Sonner M, Treu J, Döblinger M, Hirler A, Riedl H, Finley JJ, Lauhon L, and Koblmüller G

Abstract

Direct correlations between dopant incorporation, distribution, and their electrical activity in semiconductor nanowires (NW) are difficult to access and require a combination of advanced nanometrology methods. Here, we present a comprehensive investigation of the chemical and electrically active dopant concentrations in n-type Si-doped InAs NW grown by catalyst-free molecular beam epitaxy using various complementary techniques. N-type carrier concentrations are determined by Seebeck effect measurements and four-terminal NW field-effect transistor characterization and compared with the Si dopant distribution analyzed by local electrode atom probe tomography. With increased dopant supply, a distinct saturation of the free carrier concentration is observed in the mid-10 18 cm -3 range. This behavior coincides with the incorporated Si dopant concentrations in the bulk part of the NW, suggesting the absence of compensation effects. Importantly, excess Si dopants with very high concentrations (>10 20 cm -3 ) segregate at the NW sidewall surfaces, which confirms recent first-principles calculations and results in modifications of the surface electronic properties that are sensitively probed by field-effect measurements. These findings are expected to be relevant also for doping studies of other noncatalytic III-V NW systems.

Published
2018
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