Search

Silicon color centers have recently emerged as promising candidates for commercial quantum technology, yet their interaction with electric fields has yet to be investigated. In this paper, we demonstrate electrical manipulation of telecom silicon color centers by fabricating lateral electrical diodes with an integrated G center ensemble in a commercial silicon on insulator wafer. The ensemble optical response is characterized under application of a reverse-biased DC electric field, observing both 100% modulation of fluorescence signal, and wavelength redshift of approximately 1.4 GHz/V above a threshold voltage. Finally, we use G center fluorescence to directly image the electric field distribution within the devices, obtaining insight into the spatial and voltage-dependent variation of the junction depletion region and the associated mediating effects on the ensemble. Strong correlation between emitter-field coupling and generated photocurrent is observed. Our demonstration enables electrical control and stabilization of semiconductor quantum emitters.

Distributing quantum information between remote systems will necessitate the integration of emerging quantum components with existing communication infrastructure. This requires understanding the channel-induced degradations of the transmitted quantum signals, beyond the typical characterization methods for classical communication systems. Here we report on a comprehensive characterization of a Boston-Area Quantum Network (BARQNET) telecom fiber testbed, measuring the time-of-flight, polarization, and phase noise imparted on transmitted signals. We further design and demonstrate a compensation system that is both resilient to these noise sources and compatible with integration of emerging quantum memory components on the deployed link. These results have utility for future work on the BARQNET as well as other quantum network testbeds in development, enabling near-term quantum networking demonstrations and informing what areas of technology development will be most impactful in advancing future system capabilities., Comment: 9 pages, 5 figures + Supplemental Materials

Practical quantum networks require interfacing quantum memories with existing channels and systems that operate in the telecom band. Here we demonstrate low-noise, bidirectional quantum frequency conversion that enables a solid-state quantum memory to directly interface with telecom-band systems. In particular, we demonstrate conversion of visible-band single photons emitted from a silicon-vacancy (SiV) center in diamond to the telecom O-band, maintaining low noise ($g^2(0)<0.1$) and high indistinguishability ($V=89\pm8\%$). We further demonstrate the utility of this system for quantum networking by converting telecom-band time-bin pulses, sent across a lossy and noisy 50 km deployed fiber link, to the visible band and mapping their quantum states onto a diamond quantum memory with fidelity $\mathcal{F}=87\pm 2.5 \% $. These results demonstrate the viability of SiV quantum memories integrated with telecom-band systems for scalable quantum networking applications., Comment: 9 pages, 5 figures + Supplemental Materials

Long-distance quantum communication and networking require quantum memory nodes with efficient optical interfaces and long memory times. We report the realization of an integrated two-qubit network node based on silicon-vacancy centers (SiVs) in diamond nanophotonic cavities. Our qubit register consists of the SiV electron spin acting as a communication qubit and the strongly coupled 29Si nuclear spin acting as a memory qubit with a quantum memory time exceeding two seconds. By using a highly strained SiV with suppressed electron spin-phonon interactions, we realize electron-photon entangling gates at elevated temperatures up to 1.5 K and nucleus-photon entangling gates up to 4.3 K. Finally, we demonstrate efficient error detection in nuclear spin-photon gates by using the electron spin as a flag qubit, making this platform a promising candidate for scalable quantum repeaters., Comment: 24 pages, 19 figures

Quantum networks enable a broad range of practical and fundamental applications spanning distributed quantum computing to sensing and metrology. A cornerstone of such networks is an interface between telecom photons and quantum memories. Here we demonstrate a novel approach based on cavity optomechanics that utilizes the susceptibility of spin qubits to strain. We use it to control electron spins of nitrogen-vacancy centers in diamond with photons in the 1550 nm telecommunications wavelength band. This method does not involve qubit optical transitions and is insensitive to spectral diffusion. Furthermore, our approach can be applied to solid-state qubits in a wide variety of materials, expanding the toolbox for quantum information processing., Comment: 8 pages, 5 figures

Mechanical systems are one of the promising platforms for classical and quantum information processing and are already widely-used in electronics and photonics. Cavity optomechanics offers many new possibilities for information processing using mechanical degrees of freedom; one of them is storing optical signals in long-lived mechanical vibrations by means of optomechanically induced transparency. However, the memory storage time is limited by intrinsic mechanical dissipation. More over, in-situ control and manipulation of the stored signals--processing--has not been demonstrated. Here, we address both of these limitations using a multi-mode cavity optomechanical memory. An additional optical field coupled to the memory modifies its dynamics through time-varying parametric feedback. We demonstrate that this can extend the memory decay time by an order of magnitude, decrease its effective mechanical dissipation rate by two orders of magnitude, and deterministically shift the phase of a stored field by over 2$\pi$. This further expands the information processing toolkit provided by cavity optomechanics.

The ability to communicate quantum information over long distances is of central importance in quantum science and engineering. For example, it enables secure quantum key distribution (QKD) relying on fundamental principles that prohibit the "cloning" of unknown quantum states. While QKD is being successfully deployed, its range is currently limited by photon losses and cannot be extended using straightforward measure-and-repeat strategies without compromising its unconditional security. Alternatively, quantum repeaters, which utilize intermediate quantum memory nodes and error correction techniques, can extend the range of quantum channels. However, their implementation remains an outstanding challenge, requiring a combination of efficient and high-fidelity quantum memories, gate operations, and measurements. Here we report the experimental realization of memory-enhanced quantum communication. We use a single solid-state spin memory integrated in a nanophotonic diamond resonator to implement asynchronous Bell-state measurements. This enables a four-fold increase in the secret key rate of measurement device independent (MDI)-QKD over the loss-equivalent direct-transmission method while operating megahertz clock rates. Our results represent a significant step towards practical quantum repeaters and large-scale quantum networks., Comment: 6 pages and 4 figures. Supplementary material, 9 pages and 5 figures, is available at the end of the manuscript

Photon-mediated coupling between distant matter qubits may enable secure communication over long distances, the implementation of distributed quantum computing schemes, and the exploration of new regimes of many-body quantum dynamics. Nanophotonic devices coupled to solid-state quantum emitters represent a promising approach towards realization of these goals, as they combine strong light-matter interaction and high photon collection efficiencies. However, the scalability of these approaches is limited by the frequency mismatch between solid-state emitters and the instability of their optical transitions. Here we present a nano-electromechanical platform for stabilization and tuning of optical transitions of silicon-vacancy (SiV) color centers in diamond nanophotonic devices by dynamically controlling their strain environments. This strain-based tuning scheme has sufficient range and bandwidth to alleviate the spectral mismatch between individual SiV centers. Using strain, we ensure overlap between color center optical transitions and observe an entangled superradiant state by measuring correlations of photons collected from the diamond waveguide. This platform for tuning spectrally stable color centers in nanophotonic waveguides and resonators constitutes an important step towards a scalable quantum network.

Photon-mediated interactions between quantum systems are essential for realizing quantum networks and scalable quantum information processing. We demonstrate such interactions between pairs of silicon-vacancy (SiV) color centers strongly coupled to a diamond nanophotonic cavity. When the optical transitions of the two color centers are tuned into resonance, the coupling to the common cavity mode results in a coherent interaction between them, leading to spectrally-resolved superradiant and subradiant states. We use the electronic spin degrees of freedom of the SiV centers to control these optically-mediated interactions. Our experiments pave the way for implementation of cavity-mediated quantum gates between spin qubits and for realization of scalable quantum network nodes., Comment: 8 pages and 4 figures. Supplementary Material, 23 pages and 9 figures, available as an ancillary file

The negatively-charged silicon-vacancy (SiV$^-$) color center in diamond has recently emerged as a promising system for quantum photonics. Its symmetry-protected optical transitions enable creation of indistinguishable emitter arrays and deterministic coupling to nanophotonic devices. Despite this, the longest coherence time associated with its electronic spin achieved to date ($\sim 250$ ns) has been limited by coupling to acoustic phonons. We demonstrate coherent control and suppression of phonon-induced dephasing of the SiV$^-$ electronic spin coherence by five orders of magnitude by operating at temperatures below 500 mK. By aligning the magnetic field along the SiV$^-$ symmetry axis, we demonstrate spin-conserving optical transitions and single-shot readout of the SiV$^-$ spin with 89% fidelity. Coherent control of the SiV$^-$ spin with microwave fields is used to demonstrate a spin coherence time $T_2$ of 13 ms and a spin relaxation time $T_1$ exceeding 1 s at 100 mK. These results establish the SiV$^-$ as a promising solid-state candidate for the realization of scalable quantum networks., Comment: 5 pages, 4 figures. Supplemental Material is available as an ancillary file

We demonstrate an all-optical thermometer based on an ensemble of silicon-vacancy centers (SiVs) in diamond by utilizing a temperature dependent shift of the SiV optical zero-phonon line transition frequency, $\Delta\lambda/\Delta T= 6.8\,\mathrm{GHz/K}$. Using SiVs in bulk diamond, we achieve $70\,\mathrm{mK}$ precision at room temperature with a sensitivity of $360\,\mathrm{mK/\sqrt{Hz}}$. Finally, we use SiVs in $200\,\mathrm{nm}$ nanodiamonds as local temperature probes with $521\,\mathrm{ mK/\sqrt{Hz}}$ sensitivity. These results open up new possibilities for nanoscale thermometry in biology, chemistry, and physics, paving the way for control of complex nanoscale systems., Comment: 5 pages, 3 figures

We studied light assisted collisions of Tm atoms in a magneto optical trap (MOT) for the first time, working on a weak cooling transition at 530.7 nm $(4f^{13}(^2F^0)6s^2,J=7/2,F=4$ to $4f^{12}(^3H_6)5d_{5/2}6s^2,J=9/2,F=5)$. We observed a strong influence from radiation trapping and light assisted collisions on the dynamics of this trap. We carefully separated these two contributions and measured the binary loss rate constant at different laser powers and detuning frequencies near the cooling transition. Analyzing losses from the MOT, we found the light assisted inelastic binary loss rate constant to reach values of up to $\beta=10^{-9}$ cm$^3$/s and gave the upper bound on a branching ratio $k<0.8\times 10^{-6}$ for the 530.7 nm transition.

Color centers in diamond provide a promising platform for quantum optics in the solid state, with coherent optical transitions and long-lived electron and nuclear spins. Building upon recent demonstrations of nanophotonic waveguides and optical cavities in single-crystal diamond, we now demonstrate on-chip diamond nanophotonics with a high efficiency fiber-optical interface, achieving > 90% power coupling at visible wavelengths. We use this approach to demonstrate a bright source of narrowband single photons, based on a silicon-vacancy color center embedded within a waveguide-coupled diamond photonic crystal cavity. Our fiber-coupled diamond quantum nanophotonic interface results in a high flux of coherent single photons into a single mode fiber, enabling new possibilities for realizing quantum networks that interface multiple emitters, both on-chip and separated by long distances.

A solid-state system combining a stable spin degree of freedom with an efficient optical interface is highly desirable as an element for integrated quantum optical and quantum information systems. We demonstrate a bright color center in diamond with excellent optical properties and controllable electronic spin states. Specifically, we carry out detailed optical spectroscopy of a Germanium Vacancy (GeV) color center demonstrating optical spectral stability. Using an external magnetic field to lift the electronic spin degeneracy, we explore the spin degree of freedom as a controllable qubit. Spin polarization is achieved using optical pumping, and a spin relaxation time in excess of 20 $\mu$s is demonstrated. Optically detected magnetic resonance (ODMR) is observed in the presence of a resonant microwave field. ODMR is used as a probe to measure the Autler-Townes effect in a microwave-optical double resonance experiment. Superposition spin states were prepared using coherent population trapping, and a pure dephasing time of about 19 ns was observed. Prospects for realizing coherent quantum registers based on optically controlled GeV centers are discussed., Comment: 6 pages, 4 figures

We demonstrate a quantum nanophotonics platform based on germanium-vacancy (GeV) color centers in fiber-coupled diamond nanophotonic waveguides. We show that GeV optical transitions have a high quantum efficiency and are nearly lifetime-broadened in such nanophotonic structures. These properties yield an efficient interface between waveguide photons and a single GeV without the use of a cavity or slow-light waveguide. As a result, a single GeV center reduces waveguide transmission by $18 \pm 1\%$ on resonance in a single pass. We use a nanophotonic interferometer to perform homodyne detection of GeV resonance fluorescence. By probing the photon statistics of the output field, we demonstrate that the GeV-waveguide system is nonlinear at the single-photon level., Comment: 5 pages and 5 figures. Supplemental Material, 4 pages and 1 figure, available as an ancillary file

The controlled creation of defect center---nanocavity systems is one of the outstanding challenges for efficiently interfacing spin quantum memories with photons for photon-based entanglement operations in a quantum network. Here, we demonstrate direct, maskless creation of atom-like single silicon-vacancy (SiV) centers in diamond nanostructures via focused ion beam implantation with $\sim 32$ nm lateral precision and $< 50$ nm positioning accuracy relative to a nanocavity. Moreover, we determine the Si+ ion to SiV center conversion yield to $\sim 2.5\%$ and observe a 10-fold conversion yield increase by additional electron irradiation. We extract inhomogeneously broadened ensemble emission linewidths of $\sim 51$ GHz, and close to lifetime-limited single-emitter transition linewidths down to $126 \pm13$ MHz corresponding to $\sim 1.4$-times the natural linewidth. This demonstration of deterministic creation of optically coherent solid-state single quantum systems is an important step towards development of scalable quantum optical devices.

Efficient interfaces between photons and quantum emitters form the basis for quantum networks and enable nonlinear optical devices operating at the single-photon level. We demonstrate an integrated platform for scalable quantum nanophotonics based on silicon-vacancy (SiV) color centers coupled to nanoscale diamond devices. By placing SiV centers inside diamond photonic crystal cavities, we realize a quantum-optical switch controlled by a single color center. We control the switch using SiV metastable orbital states and verify optical switching at the single-photon level by using photon correlation measurements. We use Raman transitions to realize a single-photon source with a tunable frequency and bandwidth in a diamond waveguide. Finally, we create entanglement between two SiV centers by detecting indistinguishable Raman photons emitted into a single waveguide. Entanglement is verified using a novel superradiant feature observed in photon correlation measurements, paving the way for the realization of quantum networks., Comment: 15 pages and 5 figures. Supplementary Material, 36 pages and 10 figures, available as an ancillary file

The negatively-charged silicon-vacancy ($\mathrm{SiV}^{-}$) center in diamond is a bright source of indistinguishable single photons and a useful resource in quantum information protocols. Until now, $\mathrm{SiV}^{-}$ centers with narrow optical linewidths and small inhomogeneous distributions of $\mathrm{SiV}^{-}$ transition frequencies have only been reported in samples doped with silicon during diamond growth. We present a technique for producing implanted $\mathrm{SiV}^{-}$ centers with nearly lifetime-limited optical linewidths and a small inhomogeneous distribution. These properties persist after nanofabrication, paving the way for incorporation of high-quality $\mathrm{SiV}^{-}$ centers into nanophotonic devices., Comment: 9 pages, 5 figures. (v3) Updated to make consistent with journal version. Some material from SI incorporated into main text. Minor stylistic updates compared to previous version