Search

Your search keyword '"Svensson, B.G."' showing total 459 results
Start Over Author "Svensson, B.G."
459 results on '"Svensson, B.G."'

9. Silicon detectors for the sLHC

Author

Affolder, A., Aleev, A., Allport, P.P., Andricek, L., Artuso, M., Balbuena, J.P., Barabash, L., Barber, T., Barcz, A., Bassignana, D., Bates, R., Battaglia, M., Beimforde, M., Bernardini, J., Betancourt, C., Bilei, G.M., Bisello, D., Blue, A., Bohm, J., Bolla, G., Borgia, A., Borrello, L., Bortoletto, D., Boscardin, M., Bosma, M.J., Bowcock, T.J.V., Breindl, M., Broz, J., Bruzzi, M., Brzozowski, A., Buhmann, P., Buttar, C., Campabadal, F., Candelori, A., Casse, G., Charron, S., Chren, D., Cihangir, S., Cindro, V., Collins, P., Cortina Gil, E., Costinoaia, C.A., Creanza, D., Cristobal, C., Dalla Betta, G.-F., de Boer, W., De Palma, M., Demina, R., Dierlamm, A., Díez, S., Dobos, D., Doherty, F., Dolenc Kittelmann, I., Dolezal, Z., Dolgolenko, A., Dragoi, C., Driewer, A., Dutta, S., Eckstein, D., Eklund, L., Eremin, I., Eremin, V., Erfle, J., Fadeeva, N., Fahrer, M., Fiori, F., Fleta, C., Focardi, E., Forshaw, D., Fretwurst, E., Frey, M., Bates, A.G., Gallrapp, C., Garcia, C., Gaubas, E., Genest, M.-H., Giolo, K., Glaser, M., Goessling, C., Golubev, A., Gorelov, I., Grégoire, G., Gregori, P., Grigoriev, E., Grillo, A.A., Grinstein, S., Groza, A., Guskov, J., Hansen, T.E., Härkönen, J., Hartjes, F.G., Hartmann, F., Hoeferkamp, M., Horisberger, R., Houdayer, A., Hynds, D., Ilyashenko, I., Junkes, A., Kadys, A., Kaminski, P., Karpenko, A., Kaska, K., Kazuchits, N., Kazukauskas, V., Kharchuk, A., Khivrich, V., Kierstead, J., Klanner, R., Klingenberg, R., Kodys, P., Koffeman, E., Köhler, M., Kohout, Z., Korjenevski, S., Korolkov, I., Kozlowski, R., Kozubal, M., Kramberger, G., Kühn, S., Kuleshov, S., Kuznetsov, A., Kwan, S., La Rosa, A., Lacasta, C., Lange, J., Lassila-Perini, K., Lastovetsky, V., Lazanu, I., Lazanu, S., Lebel, C., Lefeuvre, G., Lemaitre, V., Leroy, C., Li, Z., Lindström, G., Litovchenko, A., Litovchenko, P., Lozano, M., Luczynski, Z., Luukka, P., Macchiolo, A., Macraighne, A., Mäenpää, T., Makarenko, L.F., Mandic, I., Maneuski, D., Manna, N., Marco, R., Marti i Garcia, S., Marunko, S., Masek, P., Mathieson, K., Matysek, M., Mekki, J., Messineo, A., Metcalfe, J., Mikestikova, M., Mikuž, M., Militaru, O., Minano, M., Miyamoto, J., Moll, M., Monokhov, E., Mori, R., Moser, H.-G., Muenstermann, D., Munoz Sanchez, F.J., Naletko, A., Nisius, R., OShea, V., Pacifico, N., Pantano, D., Parkes, C., Parzefall, U., Passeri, D., Pawlowski, M., Pellegrini, G., Pernegger, H., Petasecca, M., Piemonte, C., Pignatel, G.U., Pintilie, I., Pintilie, L., Piotrzkowski, K., Placekett, R., Pöhlsen, Th., Polivtsev, L., Popule, J., Pospisil, S., Preiss, J., Radicci, V., Radu, R., Raf, J.M., Rando, R., Richter, R., Roeder, R., Roger, R., Rogozhkin, S., Rohe, T., Ronchin, S., Rott, C., Roy, A., Rummler, A., Ruzin, A., Sadrozinski, H.F.W., Sakalauskas, S., Samadashvili, N., Scaringella, M., Schumm, B., Seidel, S., Seiden, A., Shipsey, I., Sibille, J., Sicho, P., Slavicek, T., Solar, M., Soldevila-Serrano, U., Son, S., Sopko, V., Sopko, B., Spencer, N., Spiegel, L., Srivastava, A., Steinbrueck, G., Stewart, G., Stolze, D., Storasta, J., Surma, B., Svensson, B.G., Tan, P., Tomasek, M., Toms, K., Tsiskaridze, S., Tsvetkov, A., Tuboltsev, Yu., Tuominen, E., Tuovinen, E., Tuuva, T., Tylchin, M., Uebersee, H., Ullán, M., Vaitkus, J.V., van Beuzekom, M., Verbitskaya, E., Vila Alvarez, I., Visser, J., Vossebeld, J., Vrba, V., Walz, M., Weigell, P., Wiik, L., Wilhelm, I., Wunstorf, R., Zaluzhny, A., Zavrtanik, M., Zelazko, J., Zen, M., Zhukov, V., Zontar, D., and Zorzi, N.

Published
2011
Full Text
View/download PDF

25. Recombination centers in as-grown and electron-irradiated ZnO substrates

Author

Son, N.T., Ivanov, I.G., Kuznetsov, A., Svensson, B.G., Zhao, Q.X., Willander, M., Morishita, N., Ohshima, T., Itoh, H., Isoya, J., Janzen, E., and Yakimova, R.

Subjects
Zinc oxide -- Research, Zinc oxide -- Properties, Magnetic resonance -- Observations, Physics
Abstract

The optical detection of magnetic resonance (ODMR) is used to observe the defects in ZnO substrates irradiated with 3 MeV electrons at room temperature. The Zn centers labeled as LU3/LU4 acting as dominating recombination centers in irradiated and as-grown ZnO are found to be related to intrinsic defects.

Published
2007

26. Excess vacancies in high energy ion implanted SiGe

Author

Kogler, R., Mucklich, A., Skorupa, W., Peeva, A., Kuznetsov, A.Yu, Christensen, J.S., and Svensson, B.G.

Subjects
Silicon -- Chemical properties, Silicon -- Thermal properties, Germanium -- Chemical properties, Germanium -- Thermal properties, Energy levels (Quantum mechanics) -- Analysis, Physics
Abstract

The excess vacancies generated by high energy implantation with [Si.sup.+] and [Ge.sup.+] ions in SiGe are investigated after rapid thermal annealing at 900 degree Celsius. The analysis has shown that the main contribution to the high excess vacancy concentration is SiGe has resulted from the inefficient recombination of vacancies and interstitials.

Published
2007

29. Effect of a mid-temperature thermal annealing on the enhancement of boron diffusion during rapid thermal annealing

Author

Leveque, P., Mathiot, D., Christensen, J.S., Svensson, B.G., and Larsen, Nylandsted A.

Subjects
Annealing -- Research, Diffusion -- Research, Physics
Abstract

The possibility of using a sequence of mid-temperature annealing followed by rapid thermal annealing (RTA) as a promising technological step for reducing boron diffusion during RTA in a predictable and reproducible way is presented. It is shown that the slight reduction in the interstitial excess concentration during the mid-temperature annealing is not sufficient to substantially influence the boron diffusion during a subsequent rapid thermal annealing.

Published
2006

30. Electronic properties of the Sm/4H-SiC surface alloy

Author

Kildemo, M., Grossner, U., Juel, M., Samuelsen, B., Svensson, B.G., and Raaen, S.

Subjects
Silicon carbide -- Electric properties, Samarium -- Electric properties, Photoelectron spectroscopy -- Usage, Physics
Abstract

The formation of a samarium on silicon carbide (Sm/SiC) alloy after deposition of 2-3 monolayers of Sm in ultrahigh vacuum on clean reconstructed carbon(000-1)-and silicon(0001) terminated SiC surfaces is studied by x-ray photoemission spectroscopy, ultraviolet photoemission spectroscopy and low-energy electron diffraction. The measured work function together with core-level spectroscopy is used to differentiate the formation of samarium salicide carbide (Sm-Si-C) surface alloys on both polar faces of 4H-SiC.

Published
2006

31. Defect energy levels in hydrogen-implanted and electron-irradiated n-type 4H silicon carbide

Author

Alfieri, G., Monakhov, E.V., Svensson, B.G., and Hallen, A.

Subjects
Silicon carbide -- Chemical properties, Ion implantation -- Methods, Semiconductor doping -- Methods, Hydrogen -- Chemical properties, Physics
Abstract

The energy position and thermal stability of deep levels in nitrogen doped 4H-SiC epitaxial layers were studied after 1.2 MeV proton implantation and 15MeV electron irradiation using deep level transient spectroscopy (DLTS). The DLTS measurements which were carried out in the temperature range from 120 to 630 kappa after each annealing step, reveal the presence of ten electron traps located in the energy range of 0.45-1.6 eV below the conduction band edge.

Published
2005

34. Dynamic annealing in ion implanted SiC: Flux versus temperature dependence

Author

Kuznetsov, A. Yu., Wong-Leung, J., Hallen, A., Jagadish, C., and Svensson, B.G.

Subjects
Silicon carbide -- Thermal properties, Annealing -- Analysis, Physics
Abstract

A strong influence of ion implantation flux on the accumulation of radiation damage, the so-called dose rate effect, is observed and systematically studied in SiC. The results are discussed in terms of migration and annihilation of intrinsic type defects for both the Si- and C-sublattices.

Published
2003

46. An investigation on the modeling of transient enhanced diffusion of ultralow energy implanted boron in silicon

Author

Mannino, G., Whelan, S., Schroer, E., Privitera, V., Leveque, P., Svensson, B.G., and Napolitani, E.

Subjects
Boron -- Research, Physics -- Research, Semiconductor doping -- Research, Semiconductors -- Diffusion, Physics
Abstract

Research describing the diffusion of boron in silicon after ultralow energy implantation is presented. Diffusion models based on cluster evolution and the kick-out model are investigated.

Published
2001

47. Irradiation enhanced diffusion of boron in delta-doped silicon

Author

Leveque, P., Kuznetsov, A. Yu, Christensen, J.S., Svensson, B.G., and Nylandsted Larsen, A.

Subjects
Boron -- Research, Diffusion -- Research, Physics -- Research, Semiconductor wafers -- Research, Semiconductors -- Diffusion, Physics
Abstract

Research describing the effects of irradiation on the diffusion of boron in delta-doped silicon is presented. In addition the presence of antimony and its effect on boron diffusion is investigated.

Published
2001

Catalog

Books, media, physical & digital resources
See catalog results