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Self-sustained electrical oscillations (SEOs) in VO2 films have attracted considerable attention owing to their potential to emulate spiking pulses in neuromorphic circuits. However, triggering stable SEOs and the controlling oscillation frequency remain challenging because the details of circuit operation with VO2-based devices are not yet well understood. In this study, we propose a method to observe SEOs stably in a VO2-based planar device with Au/Ti facing electrodes by introducing a 50 Hz sinusoidal voltage from a curve tracer. The transient aspects, including the onset and collapse of the SEO, were captured, providing clarity on the oscillation frequency range and circuit conditions for the SEOs, which are closely correlated with the device temperature. It became clear that the parallel capacitance not only determined the oscillation frequency but also controlled the current through VO2 just after the insulator–metal transition of VO2, playing a role in triggering stable oscillations. We also successfully observed the transient aspects from in-phase to anti-phase synchronized oscillations in the coupled oscillations. This study advances the experimental procedures and applications of SEOs in VO2-based planar devices. [ABSTRACT FROM AUTHOR]

Mechanical engineering of 2D materials allows continuous and reversible modulation of their electronic and photonic properties. Although photoluminescence (PL) measurement is an effective way to monitor the effects of mechanical forces on 2D semiconductors, there is currently a lack of techniques to enhance PL signals during stress application. This study presents an innovative mechanical engineering approach that integrates a dielectric microsphere as an atomic force microscopy (AFM) probe into a Raman-AFM system. Force–distance curve tests and COMSOL simulations were performed to analyze and estimate the compressive stress exerted by the microsphere. Importantly, the PL signals of transition metal dichalcogenides subjected to microsphere probe's force were enhanced and reveal distinct mechanical responses depending on the substrate rigidity: compressive pressures for rigid substrates and tensile strains for flexible ones. Notably, this strategy not only amplifies spectral signals in real time but also achieves fine stress modulation in the precise targeted material region, demonstrating its superiority in sensitive mechanical engineering applications. Our work offers a new avenue for the deliberate design of mechanical strains in 2D materials, which is crucial for optimizing the performance of related devices. [ABSTRACT FROM AUTHOR]

We demonstrate the integration of vanadium dioxide single-crystal nanobeams fabricated by modified vapor–liquid–solid method as electrical switching elements into a radio-frequency transmission line and evaluate the performances of the overall device in modulating the transmission of the conveyed RF electromagnetic waves. The switching capability of the RF device is based on the metal–insulator transition of VO2 nanobeams, with an on/off electrical switching ratio of 10 4 , i.e., resistance modulation from more than 10 6 Ω when the wires are in the insulating state to only ≈ 20 Ω when they are in the metal-like state. The thermal and electrical activation of the VO2 wires between the two dissimilar states is resulting in RF switching performances characterized by more than 15 dB change in the transmission coefficient of the device over the 100 MHz–24 GHz frequency domain. [ABSTRACT FROM AUTHOR]

Various impurities have been doped into ferroelectric BaTiO3-based materials, which are used in multi-layer ceramic capacitors, to improve their insulation resistance, reliability, and dielectric properties. However, the relationship between doped impurities and these device properties at the microscopic level remains unexplored. This study investigated the charge states and solubilities of doped impurities (V, Cr, Mn, Fe, Mg, Ca, and Sr) in BaTiO3 using density functional theory. We employed the screened hybrid functional and a rhombohedral lattice model. Owing to a better description of unoccupied states with the hybrid functional, equilibrium charge states and magnetic moments of V, Mn, and Fe impurities were in good agreement with those measured by magnetic susceptibility measurements. Furthermore, impurity levels of transition metal elements were qualitatively consistent with the experimental reports obtained by electron paramagnetic resonance. However, levels of Fe calculated in cubic BaTiO3 did not reproduce those observations. Therefore, a dynamically stable rhombohedral lattice was found to be more suitable than a cubic lattice for calculating the defects in BaTiO3. The solubility of transition metal dopants was highly dependent on the oxygen chemical potential conditions. By analyzing the cohesive energy, we observed a lower (higher) equilibrium charge state of the defect compared with the higher (lower) oxidation number of stable competitive phase enhanced solubility under reducing (oxidizing) conditions. Our calculations revealed that vanadium and manganese dopants were soluble under reducing conditions owing to instabilities of their metal phases and act as effective acceptors in BaTiO3. [ABSTRACT FROM AUTHOR]

Various impurities have been doped into ferroelectric BaTiO3-based materials, which are used in multi-layer ceramic capacitors, to improve their insulation resistance, reliability, and dielectric properties. However, the relationship between doped impurities and these device properties at the microscopic level remains unexplored. This study investigated the charge states and solubilities of doped impurities (V, Cr, Mn, Fe, Mg, Ca, and Sr) in BaTiO3 using density functional theory. We employed the screened hybrid functional and a rhombohedral lattice model. Owing to a better description of unoccupied states with the hybrid functional, equilibrium charge states and magnetic moments of V, Mn, and Fe impurities were in good agreement with those measured by magnetic susceptibility measurements. Furthermore, impurity levels of transition metal elements were qualitatively consistent with the experimental reports obtained by electron paramagnetic resonance. However, levels of Fe calculated in cubic BaTiO3 did not reproduce those observations. Therefore, a dynamically stable rhombohedral lattice was found to be more suitable than a cubic lattice for calculating the defects in BaTiO3. The solubility of transition metal dopants was highly dependent on the oxygen chemical potential conditions. By analyzing the cohesive energy, we observed a lower (higher) equilibrium charge state of the defect compared with the higher (lower) oxidation number of stable competitive phase enhanced solubility under reducing (oxidizing) conditions. Our calculations revealed that vanadium and manganese dopants were soluble under reducing conditions owing to instabilities of their metal phases and act as effective acceptors in BaTiO3. [ABSTRACT FROM AUTHOR]

Layered manganese transition metal oxides, such as NaMnO2, have attracted great interest due to the low cost and high capacity. However, complex phase transitions in NaMnO2 lead to poor cycling stability. The introduction of Li doping has been confirmed to improve the performance of NaMnO2. O3-type NaLi1/3Mn2/3O2 (NLMO), synthesized in 2021, has demonstrated excellent electrochemical performance. Notably, irreversible Li interlayer migration (Li migrates from the transition metal layer to the alkali metal layer) has been observed during cycling, which is related to the electrochemical performance. Therefore, it is crucial to understand the mechanism underlying Li interlayer migration in O3-NLMO. However, the environment of Li interlayer migration on cycling is complex and involves interlayer spacing, Na-ion concentration, the degree of O-ion oxidation, and phase transition. Here, in this work, we utilized the first-principles method to decouple the coupling factors influencing the Li interlayer migration. Through analyzing the impact of the single-factor on Li interlayer migration, we aim to identify the crucial factors affecting this process. Our results show that a decrease in Na-ion concentration and an increase in O-ion oxidation degree promote the Li interlayer migration, while the O–P phase transition suppresses the Li interlayer migration. Interlayer spacing was found to play a less influential role in Li interlayer migration. Our investigations provide effective strategies for the subsequent regulation of Li interlayer migration. [ABSTRACT FROM AUTHOR]

Using resonant Raman spectroscopy with 632.8 nm (1.96 eV) laser, we describe the Raman spectra of single crystals of transition metal dichalcogenides with nominal composition MoSe(2−x)Sx for x = 0.2. Changes in Raman spectra at some regions of the sample indicated non-stoichiometry and, in particular, chalcogenide vacancies. At low temperatures around 77 K, we observed unusual temperature dependent enhancement in the intensity of non-zone center modes as well as overtones and combination modes in Raman spectra. This enhancement in the intensity is correlated to the resonance achieved in the non-stoichiometric regions of the crystal at low temperatures. Observed resonance is attributed to modification in the electronic structure due to defects. Energy dispersive x-ray spectroscopy measurements confirmed chalcogenide vacancies in the crystals. The change in the electronic structure due to defects is also corroborated by photoluminescence spectroscopy measurements. [ABSTRACT FROM AUTHOR]

Alloying has been a powerful and practical strategy to widen the palette of physical properties available to semiconductor materials. Thanks to recent advances in the synthesis of van der Waals semiconductors, this strategy can be extended to monolayers (MLs) of transition metal dichalcogenides (TMDs). Due to their extraordinary flexibility and robustness, strain is another powerful means to engineer the electronic properties of two-dimensional (2D) TMDs. In this article, we combine these two approaches in an exemplary metal dichalcogenide chalcogen-alloy, WSSe. Highly strained WSSe MLs are obtained through the formation of micro-domes filled with high-pressure hydrogen. Such structures are achieved by hydrogen-ion irradiation of the bulk material, a technique successfully employed in TMDs and h-BN. Atomic force microscopy studies of the WSSe ML domes show that the dome morphology can be reproduced in terms of the average of the elastic parameters and adhesion energy of the end compounds WSe 2 and WS 2. Micro-photoluminescence measurements of the WSSe domes demonstrate that the exceedingly high strains (ε ∼ 4 %) achieved in the domes trigger a direct-to-indirect exciton transition, similarly to WSe 2 and WS 2. Our findings heighten the prospects of 2D alloys as strain- and composition-engineerable materials for flexible optoelectronics. [ABSTRACT FROM AUTHOR]

Solid–water interfaces are ubiquitous in nature and technology. In particular, technologies evolving in the green transition, such as electrocatalysis, heavily rely on the junction of an electrolyte and an electrode as a central part of the device. For the understanding of atomic-scale processes taking place at the electrolyte–electrode interface, density functional theory (DFT) has become the de facto standard. The validation of DFT's ability to simulate the interfacial solid/water interaction is crucial, and ideal simulation setups need to be identified in order to prevent avoidable systematic errors. Here, we develop a rigorous sampling protocol for benchmarking the adsorption/desorption energetics of water on metallic surfaces against experimental temperature programmed desorption, single crystal adsorption calorimetry, and thermal energy atom scattering. We screened DFT's quality on a series of transition metal surfaces, applying three of the most common exchange–correlation approximations: PBE-D3, RPBE-D3, and BEEF-vdW. We find that all three xc-functionals reflect the pseudo-zeroth order desorption of water rooted in the combination of attractive adsorbate–adsorbate interactions and their saturation at low and intermediate coverages, respectively. However, both RPBE-D3 and BEEF-vdW lead to more accurate water adsorption strengths, while PBE-D3 clearly overbinds near-surface water. We relate the variations in binding strength to specific variations in water–metal and water–water interactions, highlighting the structural consequences inherent in an uninformed choice of simulation parameters. Our study gives atomistic insight into water's complex adsorption equilibrium. Furthermore, it represents a guideline for future DFT-based simulations of solvated solid interfaces by providing an assessment of systematic errors in specific setups. [ABSTRACT FROM AUTHOR]

In ultrapure single HgSe crystal, a large linear magnetoresistance with a record magnitude of 15 000% in mercury chalcogenides was discovered in a quantum limit at the magnetic field of 12 T in the temperature range of 20–40 K. The effect was described in terms of Abrikosov's theory of quantum linear magnetoresistance, thus providing its first experimental confirmation. In the temperature range of 0.4–4.2 K, a magnetic field-induced metal–insulator transition appeared in the ultrapure HgSe. Estimates show that the critical magnetic field of this transition of 6.8 T satisfies the criterion for stabilization of a condensed Wigner phase in the quantum limit. [ABSTRACT FROM AUTHOR]

Hyperdoping Si with transition metals to form intermediate bands for infrared absorption has attracted attention recently for producing sub-bandgap photoconductivity. In particular, Si hyperdoped with Au has been demonstrated to exhibit optoelectronic response at 1550 nm. However, the reported external quantum efficiencies (EQEs) are low, and the device fabrication processes had not been optimized. In this paper, we demonstrate a significant improvement in sub-bandgap EQE through modification of the material and device fabrication processes. By increasing the Si:Au layer thickness, modification of device design, and formation of Ohmic contacts, the EQE was measured to be as high as 0.44% at 1550 nm, nearly two orders of magnitude higher than previous reports from similar devices. Additionally, the EQE was measured to be in the 10-3 range for wavelengths as long as 2.4 μ m. The EQE spectrum showed features that were attributed to defect levels from a substitutional Au acceptor defect. The above bandgap EQE showed gain in one device. Thermal annealing at 300 ° C does not improve the efficiency of Si:Au photodiodes. These results demonstrate the viability of Au-hyperdoped Si for infrared detection below the bandgap of Si. [ABSTRACT FROM AUTHOR]

Terahertz (THz) light, probing electronic responses near the Fermi level, is closely linked to DC transport. In this study, we investigate the in situ THz and DC conductivity of epitaxial VO 2 films near the heating-induced insulator–metal transition. We find that the THz conductivity transition occurs at lower temperatures than the DC conductivity transition, with the separation increasing with film thickness and crystallization quality. Analysis of the complex conductivity spectra attributes this separation to released carrier confinement at THz frequencies. Our findings contribute to a deeper understanding of electron dynamics in VO 2 films. [ABSTRACT FROM AUTHOR]

Using the density function theory in combination with the non-equilibrium Green's function method, the thermoelectric properties of molecular devices based on transition metal–terpyridine complexes are investigated. The results show that their thermoelectric properties can be significantly improved by changing the transition metal and the twist angle of the complex molecule, which is caused by shifting the molecular energy levels, resulting in increased coupling strength between the electrodes and the central molecule. The ZT value of the Ru-containing molecular device can reach up to 0.9 at room temperature, which is three orders of magnitude greater than that of the graphene nanoribbons of the same width. In addition, its thermoelectric performance can be further promoted by suppressing phonon thermal conductance through enhanced isotope scattering. The ZT value of doped devices can reach up to 1.0 in the range of 300–700 K. This work may help in the design and fabrication of transition metal-containing twistable molecular devices and provide effective methods to regulate their thermoelectric properties. [ABSTRACT FROM AUTHOR]

We report on the observation of longitudinal (in-plane) and transverse (out-of-plane) spin splitting of incident linearly polarized (p and s) light beams reflected at the interface of tungsten di-selenide, a monolayer transition metal dichalcogenide material deposited on a Si/SiO2 substrate, near the Brewster angle of incidence employing the quantum weak measurement technique. The amplified longitudinal and transverse shift values reach up to hundreds of micrometers. The transverse shift value, measured approximately at 400 μm, dominates over the longitudinal shift value at Brewster incidence. In this work, we found positive and negative shift values for the same angle of incidence but distinct polarization states revealing the explicit dependencies upon the angle of incidence and the post-selection angle. The modified weak measurement model provides an excellent interpretation of these experimental findings. This work, thus, provides novel insights into the effects of light–matter interactions and could find important applications in optical switches, nano-photonics, and the non-destructive study of material properties. [ABSTRACT FROM AUTHOR]

Two-dimensional (2D) transition metal dichalcogenides have emerged as promising quantum functional blocks benefitting from their unique combination of spin, valley, and layer degrees of freedom, particularly for the tremendous flexibility of moiré superlattices formed by van der Waals stacking. These degrees of freedom coupled with the enhanced Coulomb interaction in 2D structures allow excitons to serve as on-chip information carriers. However, excitons are spatially circumscribed due to their low mobility and limited lifetime. One way to overcome these limitations is through the coupling of excitons with surface plasmon polaritons (SPPs), which facilitates an interaction between remote quantum states. Here, we showcase the successful coupling of SPPs with interlayer excitons in molybdenum diselenide/tungsten diselenide heterobilayers. Our results indicate that the valley polarization can be efficiently transferred to SPPs, enabling preservation of polarization information even after propagating tens of micrometers. [ABSTRACT FROM AUTHOR]

Transition metal catalysts supported on topological insulators are predicted to show improved catalytic properties due to the presence of topological surface states, which may float up to the catalysts and provide robust electron transfer. However, experimental studies of surface structures and corresponding catalytic properties of transition metal/topological insulator heterostructures have not been demonstrated so far. Here, we report the structures, chemical states, and adsorption behaviors of two conventional transition metal catalysts, Pt and Pd, on the surface of Bi2Se3, a common topological insulator material. We reveal that Pt forms nanoparticles on the Bi2Se3 surface. Moreover, the interaction between Pt and surface Se is observed. Furthermore, thermal dosing of O2 onto the Pt/Bi2Se3 heterostructure leads to no oxygen adsorption. Detailed scanning tunneling microscopy study indicates that Pt transforms into PtSe2 after the thermal process, thus preventing O2 from adsorption. For another transition metal Pd, it exhibits approximate layer-island growth on Bi2Se3, and Pd–Se interaction is also observed. Our work provides significant insights into the behaviors of transition metals on top of a common topological insulator material and will assist in the future design of catalysts built with topological materials. [ABSTRACT FROM AUTHOR]

Transition metal catalysts supported on topological insulators are predicted to show improved catalytic properties due to the presence of topological surface states, which may float up to the catalysts and provide robust electron transfer. However, experimental studies of surface structures and corresponding catalytic properties of transition metal/topological insulator heterostructures have not been demonstrated so far. Here, we report the structures, chemical states, and adsorption behaviors of two conventional transition metal catalysts, Pt and Pd, on the surface of Bi2Se3, a common topological insulator material. We reveal that Pt forms nanoparticles on the Bi2Se3 surface. Moreover, the interaction between Pt and surface Se is observed. Furthermore, thermal dosing of O2 onto the Pt/Bi2Se3 heterostructure leads to no oxygen adsorption. Detailed scanning tunneling microscopy study indicates that Pt transforms into PtSe2 after the thermal process, thus preventing O2 from adsorption. For another transition metal Pd, it exhibits approximate layer-island growth on Bi2Se3, and Pd–Se interaction is also observed. Our work provides significant insights into the behaviors of transition metals on top of a common topological insulator material and will assist in the future design of catalysts built with topological materials. [ABSTRACT FROM AUTHOR]

PtS2, a member of the group 10 transition metal dichalcogenides (TMDs), has received extensive attention because of its excellent electrical properties and air stability. However, there are few reports on the preparation of single-crystal PtS2 in the literature, and the growth mechanism of single crystal PtS2 is not well elucidated. In this work, we proposed a method of preparation that combines magnetron sputtering and chemical vapor transport to obtain monocrystalline PtS2 on a SiO2/Si substrate. By controlling the growth temperature and time, we have synthesized a single crystalline PtS2 of hexagonal shape and size of 1–2 μm on a silicon substrate. Combining the molecular dynamics simulation, the growth mechanism of single crystal PtS2 was investigated both experimentally and theoretically. The synthesis method has a short production cycle and low cost, which opens the door for the fabrication of other TMDs single crystals. [ABSTRACT FROM AUTHOR]

The prospect of creating ferroelectric or high permittivity nanomaterials provides motivation for investigating complex transition metal oxides of the form Ba(Ti, MV)O3, where M = Nb or Ta. Solid state processing typically produces mixtures of crystalline phases, rarely beyond minimally doped Nb/Ta. Using a modified sol-gel method, we prepared single phase nanocrystals of Ba(Ti, M)O3. Compositional and elemental analysis puts the empirical formulas close to BaTi0.5Nb0.5O3−δ and BaTi0.5Ta0.5O3−δ. For both materials, a reversible temperature dependent phase transition (non-centrosymmetric to symmetric) is observed in the Raman spectrum in the region 533–583 K (260–310 °C); for Ba(Ti, Nb)O3, the onset is at 543 K (270 °C); and for Ba(Ti, Ta)O3, the onset is at 533 K (260 °C), which are comparable with 390–393 K (117–120 °C) for bulk BaTiO3. The crystal structure was resolved by examination of the powder x-ray diffraction and atomic pair distribution function (PDF) analysis of synchrotron total scattering data. It was postulated whether the structure adopted at the nanoscale was single or double perovskite. Double perovskites (A2B′B″O6) are characterized by the type and extent of cation ordering, which gives rise to higher symmetry crystal structures. PDF analysis was used to examine all likely candidate structures and to look for evidence of higher symmetry. The feasible phase space that evolves includes the ordered double perovskite structure Ba2(Ti, MV)O6 (M = Nb, Ta) Fm-3m, a disordered cubic structure, as a suitable high temperature analog, Ba(Ti, MV)O3Pm-3m, and an orthorhombic Ba(Ti, MV)O3Amm2, a room temperature structure that presents an unusually high level of lattice displacement, possibly due to octahedral tilting, and indication of a highly polarized crystal. [ABSTRACT FROM AUTHOR]

VO2 is renowned for its electric transition from an insulating monoclinic (M1) phase, characterized by V–V dimerized structures, to a metallic rutile (R) phase above 340 K. This transition is accompanied by a magnetic change: the M1 phase exhibits a non-magnetic spin-singlet state, while the R phase exhibits a state with local magnetic moments. Simultaneous simulation of the structural, electric, and magnetic properties of this compound is of fundamental importance, but the M1 phase alone has posed a significant challenge to the density functional theory (DFT). In this study, we show none of the commonly used DFT functionals, including those combined with on-site Hubbard U to treat 3d electrons better, can accurately predict the V–V dimer length. The spin-restricted method tends to overestimate the strength of the V–V bonds, resulting in a small V–V bond length. Conversely, the spin-symmetry-breaking method exhibits the opposite trends. Each of these two bond-calculation methods underscores one of the two contentious mechanisms, i.e., Peierls lattice distortion or Mott localization due to electron–electron repulsion, involved in the metal–insulator transition in VO2. To elucidate the challenges encountered in DFT, we also employ an effective Hamiltonian that integrates one-dimensional magnetic sites, thereby revealing the inherent difficulties linked with the DFT computations. [ABSTRACT FROM AUTHOR]

VO2 is renowned for its electric transition from an insulating monoclinic (M1) phase, characterized by V–V dimerized structures, to a metallic rutile (R) phase above 340 K. This transition is accompanied by a magnetic change: the M1 phase exhibits a non-magnetic spin-singlet state, while the R phase exhibits a state with local magnetic moments. Simultaneous simulation of the structural, electric, and magnetic properties of this compound is of fundamental importance, but the M1 phase alone has posed a significant challenge to the density functional theory (DFT). In this study, we show none of the commonly used DFT functionals, including those combined with on-site Hubbard U to treat 3d electrons better, can accurately predict the V–V dimer length. The spin-restricted method tends to overestimate the strength of the V–V bonds, resulting in a small V–V bond length. Conversely, the spin-symmetry-breaking method exhibits the opposite trends. Each of these two bond-calculation methods underscores one of the two contentious mechanisms, i.e., Peierls lattice distortion or Mott localization due to electron–electron repulsion, involved in the metal–insulator transition in VO2. To elucidate the challenges encountered in DFT, we also employ an effective Hamiltonian that integrates one-dimensional magnetic sites, thereby revealing the inherent difficulties linked with the DFT computations. [ABSTRACT FROM AUTHOR]

Molybdenum disulfide (MoS2), a semiconducting two-dimensional layered transition metal dichalcogenide (2D TMDC), with attractive properties enables the opening of a new electronics era beyond Si. However, the notoriously high contact resistance (RC) regardless of the electrode metal has been a major challenge in the practical applications of MoS2-based electronics. Moreover, it is difficult to lower RC because the conventional doping technique is unsuitable for MoS2 due to its ultrathin nature. Therefore, the metal–insulator–semiconductor (MIS) architecture has been proposed as a method to fabricate a reliable and stable contact with low RC. Herein, we introduce a strategy to fabricate MIS contact based on atomic layer deposition (ALD) to dramatically reduce the RC of single-layer MoS2 field effect transistors (FETs). We utilize ALD Al2O3 as an interlayer for the MIS contact of bottom-gated MoS2 FETs. Based on the Langmuir isotherm, the uniformity of ALD Al2O3 films on MoS2 can be increased by modulating the precursor injection pressures even at low temperatures of 150 °C. We discovered, for the first time, that film uniformity critically affects RC without altering the film thickness. Additionally, we can add functionality to the uniform interlayer by adopting isopropyl alcohol (IPA) as an oxidant. Tunneling resistance across the MIS contact is lowered by n-type doping of MoS2 induced by IPA as the oxidant in the ALD process. Through a highly uniform interlayer combined with strong doping, the contact resistance is improved by more than two orders of magnitude compared to that of other MoS2 FETs fabricated in this study. [ABSTRACT FROM AUTHOR]

Two-dimensional (2D) transition metal dichalcogenides (TMDs) hold immense promise as ultrathin-body semiconductors for cutting-edge electronics and optoelectronics. In particular, their sustained charge mobility even at atomic-level thickness as well as their absence of surface dangling bonds, versatile band structures, and silicon-compatibility integration make them a prime candidate for device applications in both academic and industrial domains. Despite such high expectations, group-VI TMDs reportedly exhibit a range of enigmatic properties, such as substantial contact resistance, Fermi level pinning, and limited unipolar charge transport, which are all rooted in their inherent defects. In other words, intrinsic physical properties resulting from their native defects extend their influence beyond the material level. Bridging point-defect-induced material properties and their behavior at the device level, this Perspective sheds light on the significance of crystalline defects beyond a rather simple defect–property relationship. As a distinctive approach, we briefly review the well-established defect model of conventional III–V semiconductors and further apply it to the emergent defect behaviors of 2D TMDs such as their defect-induced gap states. Within the main discussion, we survey a range of behaviors caused by the most prevalent intrinsic defect, namely, vacancies, within 2D TMDs, and their implications for electronic and optoelectronic properties when employed at the device level. This review presents an in-depth summary of complexities in material properties as well as device characteristics arising from intrinsic point defects and provides a solid foundation for the cross-links among native defects and material/device properties. [ABSTRACT FROM AUTHOR]

The ionization energies (IEs) of RuC, RhC, OsC, IrC, and PtC are assigned by the measurement of their two-photon ionization thresholds. Although late transition metal–carbon bonds are of major importance in organometallic chemistry and catalysis, accurate and precise fundamental thermochemical data on these chemical bonds are mainly lacking in the literature. Based on their two-photon ionization thresholds, in this work, we assign IE(RuC) = 7.439(40) eV, IE(RhC) = 7.458(32) eV, IE(OsC) = 8.647(25) eV, IE(IrC) = 8.933(74) eV, and IE(PtC) = 9.397(32) eV. These experimentally derived IEs are further confirmed through quantum chemical calculations using coupled-cluster single double perturbative triple methods that are extrapolated to the complete basis set limit using a three-parameter mixed Gaussian/exponential extrapolation scheme and corrected for spin–orbit effects using a semiempirical method. The electronic structure and chemical bonding of these MC species are discussed in the context of these ionization energy measurements. The IEs of RuC, RhC, OsC, and IrC closely mirror the IEs of the corresponding transition metal atoms, suggesting that for these species, the (n + 1)s electrons of the transition metals are not significantly involved in chemical bonding. [ABSTRACT FROM AUTHOR]

The capacity to externally manipulate magnetic properties is highly desired from both fundamental and technological perspectives, particularly in the development of magnetoelectronics and spintronics devices. Here, using first-principles calculations, we have demonstrated the ability of controlling the magnetism of magnetized graphene monolayers by interfacing them with a two-dimensional ferroelectric material. When the 3d transition metal (TM) is adsorbed on the graphene monolayer, its magnetization easy axis can be flipped from in-plane to out-of-plane by the ferroelectric polarization reversal of In2Se3, and the magnetocrystalline anisotropy energy (MAE) can be high to −0.692 meV/atom when adopting the Fe atom at bridge site with downward polarization. This may be a universal method since the 3d TM-adsorbed graphene has a very small MAE, which can be easily manipulated by the ferroelectric polarization. As a result, the inherent mechanism is analyzed by the second variation method. [ABSTRACT FROM AUTHOR]

The capacity to externally manipulate magnetic properties is highly desired from both fundamental and technological perspectives, particularly in the development of magnetoelectronics and spintronics devices. Here, using first-principles calculations, we have demonstrated the ability of controlling the magnetism of magnetized graphene monolayers by interfacing them with a two-dimensional ferroelectric material. When the 3d transition metal (TM) is adsorbed on the graphene monolayer, its magnetization easy axis can be flipped from in-plane to out-of-plane by the ferroelectric polarization reversal of In2Se3, and the magnetocrystalline anisotropy energy (MAE) can be high to −0.692 meV/atom when adopting the Fe atom at bridge site with downward polarization. This may be a universal method since the 3d TM-adsorbed graphene has a very small MAE, which can be easily manipulated by the ferroelectric polarization. As a result, the inherent mechanism is analyzed by the second variation method. [ABSTRACT FROM AUTHOR]

Negative differential resistance (NDR) is observed in various emerging electronic devices. As compared to the conventional silicon-based field effect transistor (FET), the NDR is widely investigated in two-dimensional (2D) transition metal dichalcogenide (TMD) FETs. In this work, we study the NDR effect for the TMD-based metal-edge-contact MoS 2 double-gate FET with 10 nm channel length. The multiscale atomistic simulation is demonstrated for the lateral heterostructure of a metal–semiconductor–metal FET by density functional theory, maximally localized Wannier function tight-binding Hamiltonian, and non-equilibrium Green's function methods. The quantum transport model in the given lateral heterostructure resulted in NDR in a double-gate FET. Here, we focus on the NDR by the systematic study of the transmission spectrum of the metal-edge-contact MoS 2 channel FET and finally compare it with zero NDR ideal highly doped FET. The peak-to-valley ratio in the NDR response can be modulated with the change in the gate-to-source voltage and can be used to explore various future electronic applications. [ABSTRACT FROM AUTHOR]

To control the growth of layered two-dimensional structures, such as transition metal dichalcogenide materials or heterostructures, understanding the growth mechanism is crucial. Here, we report the synthesis of ultra-thin MoO2 nanoplatelets through the sublimation of MoO3. Rhombus MoO2 nanoplatelets with the P21/c space group were characterized using various microscopic and spectroscopic techniques. Introducing sulfur sources into the chemical vapor deposition system also leads to the formation of monoclinic MoO2 nanoflakes due to the incomplete sulfurization of MoO3. With a gradual increase in the vapor concentration of sulfur, MoO3 undergoes stepwise reduction into MoS2/MoO2 and eventually into MoS2. Additionally, utilizing MoO2 as a precursor for Mo sources enables the formation of monolayer MoS2 single crystals. This work provides an effective approach for growing MoO2 nanoplatelets and elucidates the mechanism behind the stepwise sulfurization of MoO3. [ABSTRACT FROM AUTHOR]

The acidic (pKa ≈ 1.5 – 2.5) and hygroscopic nature of poly(3,4-ethylene dioxythiophene) polystyrene sulfonate, used as a common hole-injection layer in optoelectronic devices, has a detrimental effect on device stability and is associated with well established device failure mechanisms. In this work, a process with a high green index hole-injection layer material (V 2 O 5) and low surface roughness (RMS roughness ≈ 1.3 nm) was developed for demonstrating a hybrid polymer–inorganic perovskite light-emitting diode. Test devices with the new hole-injection layer demonstrate nearly identical maximum current efficiencies (4.23 vs 4.19 cd/A), and luminous efficacies (2.99 vs 2.32 lm/W) when compared to a control device fabricated with the conventional hole-injection layer. Furthermore, the peak brightness was achieved at a current density one-third of the value for the control device. To examine the transport of holes in the above hole-injection layer, we carried out device simulations based on a physical charge control model, including defect-assisted tunneling for hole injection. Close agreement for current–voltage characteristics is observed. Experimentally measured mobility in the device and measured radiative lifetimes were found to be sufficient to achieve this agreement without resorting to the introduction of a sheet charge at the injection interface. Despite the use of a bulk-heterojunction device architecture, the model predicts high radiative recombination rates [ ≈ 5.6 × 10 22 /(cm 3 s)] in the emissive layer, consistent with the measured photophysical properties for the active film, suggesting effective passivation of non-radiative surface states. [ABSTRACT FROM AUTHOR]

To control the growth of layered two-dimensional structures, such as transition metal dichalcogenide materials or heterostructures, understanding the growth mechanism is crucial. Here, we report the synthesis of ultra-thin MoO2 nanoplatelets through the sublimation of MoO3. Rhombus MoO2 nanoplatelets with the P21/c space group were characterized using various microscopic and spectroscopic techniques. Introducing sulfur sources into the chemical vapor deposition system also leads to the formation of monoclinic MoO2 nanoflakes due to the incomplete sulfurization of MoO3. With a gradual increase in the vapor concentration of sulfur, MoO3 undergoes stepwise reduction into MoS2/MoO2 and eventually into MoS2. Additionally, utilizing MoO2 as a precursor for Mo sources enables the formation of monolayer MoS2 single crystals. This work provides an effective approach for growing MoO2 nanoplatelets and elucidates the mechanism behind the stepwise sulfurization of MoO3. [ABSTRACT FROM AUTHOR]

The recent development of accurate and efficient semilocal density functionals on the third rung of Jacob's ladder of density functional theory, such as the revised regularized strongly constrained and appropriately normed (r2SCAN) density functional, could enable rapid and highly reliable prediction of the elasticity and temperature dependence of thermophysical parameters of refractory elements and their intermetallic compounds using the quasi-harmonic approximation (QHA). Here, we present a comparative evaluation of equilibrium cell volumes, cohesive energy, mechanical moduli, and thermophysical properties (Debye temperature and thermal expansion coefficient) for 22 transition metals using semilocal density functionals, including the local density approximation (LDA), Perdew–Burke–Ernzerhof (PBE) and PBEsol generalized gradient approximations (GGAs), and the r2SCAN meta-GGA. PBEsol and r2SCAN deliver the same level of accuracies for structural, mechanical, and thermophysical properties. PBE and r2SCAN perform better than LDA and PBEsol for calculating cohesive energies of transition metals. Among the tested density functionals, r2SCAN provides an overall well-balanced performance for reliably computing cell volumes, cohesive energies, mechanical properties, and thermophysical properties of various 3d, 4d, and 5d transition metals using QHA. Therefore, we recommend that r2SCAN could be employed as a workhorse method to evaluate thermophysical properties of transition metal compounds and alloys in high throughput workflows. [ABSTRACT FROM AUTHOR]

Tuning of ferroic phases provides great opportunities for material functionalities, especially in two-dimensional materials. Here, a 4f rare-earth carbide Gd2C monolayer is predicted to be a ferromagnetic metal with large magnetization, inherited from its bulk property. Based on first-principles calculations, we propose a strategy that the surface passivation can effectively tune its ferroicity, namely, switching among ferromagnetic, antiferromagnetic, and ferroelectric phases. Metal–insulator transition also occurs accompanying these ferroic transitions. Our calculation also suggests that the magneto-optic Kerr effect and second harmonic generation are effective methods in monitoring these phase transitions. [ABSTRACT FROM AUTHOR]

A guided ion beam tandem mass spectrometer was employed to study the reactions of U+ + CO2, UO+ + O2, and the reverse of the former, UO+ + CO. Reaction cross sections as a function of kinetic energy over about a three order of magnitude range were studied for all systems. The reaction of U+ + CO2 proceeds to form UO+ + CO with an efficiency of 118% ± 24% as well as generating UO2+ + C and UCO+ + O. The reaction of UO+ + O2 forms UO2+ in an exothermic, barrierless process and also results in the collision-induced dissociation of UO+ to yield U+. In the UO+ + CO reaction, the formation of UO2+ in an endothermic process is the dominant reaction, but minor products of UCO+ + O and U+ + (O + CO) are also observed. Analysis of the kinetic energy dependences observed provides the bond energies, D0(U+–O) = 7.98 ± 0.22 and 8.05 ± 0.14 eV, D0(U+–CO) = 0.73 ± 0.13 eV, and D0(OU+–O) = 7.56 ± 0.12 eV. The values obtained for D0(U+–O) and D0(OU+–O) agree well with the previously reported literature values. To our knowledge, this is the first experimental measurement of D0(U+–CO). An analysis of the oxide bond energies shows that participation of 5f orbitals leads to a substantial increase in the thermodynamic stability of UO2+ relative to ThO2+ and especially transition metal dioxide cations. [ABSTRACT FROM AUTHOR]

We demonstrate modulation of insulator metal transition (IMT) of VO2 films grown on single crystalline substrates through the effect of in-plane compression with crystallization of capping chalcogenide layer on the targeted VO2 films. Chalcogenide germanium–antimony–telluride (Ge2Sb2Te5: GST), which shows large volume reduction of 6.8% with its phase change from amorphous to crystal, was deposited on VO2 films grown on Al2O3 (001) and TiO2 (001) substrates, where V–V atoms along the cR-axis in the tetragonal VO2 phase align parallel and perpendicular to the substrate surfaces, respectively. As a result, counter shifts in temperature-dependence of resistance characteristics, to lower and higher directions, were observed for VO2 films on Al2O3 (001) and TiO2 (001), consistent with the lattice modulation of VO2 films by the in-plane compression introduced by GST crystallization. The obtained results open a way to realize large resistance change of IMT under constant temperature by controlling GST phases. [ABSTRACT FROM AUTHOR]

In this paper, we investigated the properties of transition metal (TM)-doped α - G a 2 O 3 using first-principles calculations and Monte Carlo simulations. α - G a 2 O 3 is a wide-bandgap semiconductor material with enhanced performance and lower fabrication costs on sapphire substrates compared to β - G a 2 O 3 . Doping with TMs can modify electrical transport, optical absorption, and magnetic properties, yet theoretical studies on this are scarce. Our study focused on V, Cr, Mn, and Fe impurities. We introduced a newly proposed scheme for efficiently determining the ground-state defect configuration during structural relaxation. We adopt a recent, novel image charge correction method to accurately calculate formation enthalpy and thermodynamic transition levels for spin-polarized transition metal ion doping, without employing the empirical dielectric constant. Results showed Cr ions tend to neutral substitutional Ga, while V, Mn, and Fe impurity ions tend to carry a negative charge in common n-type α - G a 2 O 3 . Magnetic moments and spin-splitting impurity levels primarily arise from transition metal impurities and their d orbitals. We used the generalized four-state method to calculate exchange interaction constants between substitution lattice sites and identified (anti) ferromagnetic couplings at specific distances in a 120-atom supercell, which are negligible in total energy calculations. Monte Carlo simulations indicated a Curie temperature of 360 K in n-type α - G a 2 O 3 : Mn system with 12.5% doping, suggesting intrinsic ferromagnetic ordering based on the Heisenberg model. Our study contributes to understanding TM-doped α - G a 2 O 3 electronic structure and magnetic properties through improved methodologies. The approach can be applied in research involving other TM-doped oxides or wide-bandgap semiconductors. [ABSTRACT FROM AUTHOR]

Two-dimensional ferromagnetic materials hold great promise to develop energy-efficient magnetoelectric memory devices and next-generation spintronics. However, one of the crucial challenges for these materials is the realization of tunable magnetocrystalline anisotropy (MCA) to balance thermal stability and energy efficiency. Here, we systematically study the adsorption effects of 3d transition metals (3d-TMs) on the electronic structure and magnetic property of the Fe3GeTe2 (FGT) monolayer. The adsorption systems exhibit different ground state configurations depending on the adatoms, while the controlled perpendicular magnetic anisotropy has also been achieved. Notably, the Mn/FGT system can maintain the out-of-plane magnetic orientation with a changing amplitude of MCA energy up to 3.057 erg/cm2 as the external strain varies from −4% to 1%. In contrast, the Fe/FGT structure undergoes spin reorientation from in-plane to out-of-plan magnetization with a distinct modification behavior of MCA. We elucidate that the underlying atomistic mechanism mainly arises from the alteration of Fe-derived 3d-orbital states in response to the strain effect, leading to competitive changes in the different coupling states. These findings can not only provide useful guidance to optimize two-dimensional magnets for fundamental research but also reveal the promising potential of TMs/FGT materials for the development of ultra-low energy spintronic devices. [ABSTRACT FROM AUTHOR]

Real-time (RT) electronic structure methods provide a natural framework for describing light–matter interactions in arbitrary time-dependent electromagnetic fields (EMF). Optically induced excited state transitions are of particular interest, which require tuned EMF to drive population transfer to and from the specific state(s) of interest. Intersystem crossing, or spin-flip, may be driven through shaped EMF or laser pulses. These transitions can result in long-lived "spin-trapped" excited states, which are especially useful for materials requiring charge separation or protracted excited state lifetimes. Time-dependent configuration interaction (TDCI) is unique among RT methods in that it may be implemented in a basis of eigenstates, allowing for rapid propagation of the time-dependent Schrödinger equation. The recent spin–orbit TDCI (TD-SOCI) enables a real-time description of spin-flip dynamics in an arbitrary EMF and, therefore, provides an ideal framework for rational pulse design. The present study explores the mechanism of multiple spin-flip pathways for a model transition metal complex, FeCO, using shaped pulses designed to drive controlled intersystem crossing and charge transfer. These results show that extremely tunable excited state dynamics can be achieved by considering the dipole transition matrix elements between the states of interest. [ABSTRACT FROM AUTHOR]

Motivated by the recent experimental study on hydrogen storage in MXene multilayers [Liu et al., Nat. Nanotechnol. 16, 331 (2021)], for the first time we propose a workflow to computationally screen 23 857 compounds of MXene to explore the general relation between the activated H2 bond length and adsorption distance. By using density functional theory we generate a dataset to investigate the adsorption geometries of hydrogen on MXenes, based on which we train physics-informed atomistic line graph neural networks (ALIGNNs) to predict adsorption parameters. To fit the results, we further derived a formula that quantitatively reproduces the dependence of H2 bond length on the adsorption distance from MXenes within the framework of Pauling's resonating valence bond theory, revealing the impact of transition metal's ligancy and valence on activating dihydrogen in H2 storage. [ABSTRACT FROM AUTHOR]

Intercalation has attracted considerable attention due to its extensive ability to modify the electronic, optical, and magnetic properties of two-dimensional (2D) layered nanomaterials. Typically, dispersed atoms or molecules are inserted into the van der Waals gap of the 2D materials. Recently, Guo et al. experimentally reported the novel VS2–VS superlattice, where the intercalation takes the form of atomic chain arrays. In this study, we employed the first-principles calculations based on density functional theory to investigate a series of analogous 2D MX2–MX–MX2 nanomaterials, which, consisting of 2D transition metal dichalcogenide bilayers, intercalated with a one-dimensional transition metal chalcogenide MX chain array, forming a hotdog-like structure. Some of the 2D MX2–MX–MX2 are thermally and dynamically stable, suggesting their potential for experimental fabrication similar to VS2–VS–VS2. MnS2–MnS–MnS2 and MnSe2–MnSe–MnSe2 have been found to exhibit ferromagnetic half-metallic properties. In addition, VSe2–VSe–VSe2, CrS2–CrS–CrS2, and CrSe2–CrSe–CrSe2 have been found to be thermally and dynamically stable. Under appropriate external stress, doping, or bias, they could become ferromagnetic half-metals, revealing their potential for spintronic applications. [ABSTRACT FROM AUTHOR]

Despite its simplicity and relatively low computational cost, second-order Møller-Plesset perturbation theory (MP2) is well-known to overbind noncovalent interactions between polarizable monomers and some organometallic bonds. In such situations, the pairwise-additive correlation energy expression in MP2 is inadequate. Although energy-gap dependent amplitude regularization can substantially improve the accuracy of conventional MP2 in these regimes, the same regularization parameter worsens the accuracy for small molecule thermochemistry and density-dependent properties. Recently, we proposed a repartitioning of Brillouin-Wigner perturbation theory that is size-consistent to second order (BW-s2), and a free parameter (α) was set to recover the exact dissociation limit of H2 in a minimal basis set. Alternatively α can be viewed as a regularization parameter, where each value of α represents a valid variant of BW-s2, which we denote as BW-s2(α). In this work, we semi-empirically optimize α for noncovalent interactions, thermochemistry, alkane conformational energies, electronic response properties, and transition metal datasets, leading to improvements in accuracy relative to the ab initio parameterization of BW-s2 and MP2. We demonstrate that the optimal α parameter (α = 4) is more transferable across chemical problems than energy-gap-dependent regularization parameters. This is attributable to the fact that the BW-s2(α) regularization strength depends on all of the information encoded in the t amplitudes rather than just orbital energy differences. While the computational scaling of BW-s2(α) is iterative O ( N 5 ) , this effective and transferable approach to amplitude regularization is a promising route to incorporate higher-order correlation effects at second-order cost. [ABSTRACT FROM AUTHOR]

Nanosheets of transition metal dichalcogenides with prospects of photocatalysis and optoelectronics applications have significant potential in device fabrication due to their low-cost production and easily controllable morphology. Here, non-degenerate pump-probe differential transmission studies with varying pump-fluence have been carried out on single-phase 2H–MoSe2 and mixed-phase 1T/2H–MoSe2 nanosheets to characterize their excited carrier dynamics. For both the samples, the differential probe transmission data show photo-induced bleaching at earlier pump-probe delay followed by photo-induced absorption unveiling signatures of exciton-state filling, exciton trapping, defect-mediated photo-induced probe absorption and recombination of defect bound excitons. The exciton trapping and photo-induced absorption by the trapped-carriers are estimated to occur with time constant of ∼430 to 500 fs based on multi-exponential modelling of the differential transmission till pump-probe delay of ∼3.5 ps. Biexponential modeling of the subsequent slow-recovery of the negative differential transmission at pump-probe delay ≳3.5 ps reveals that the exciton recombination happens via two distinct decay channels with ∼25 to 55 ps (τ1) and ≳1 ns (τ2) time constants. Pump-fluence dependent reduction in τ1 and further modelling of exciton population using higher order kinetic rate equation reveals that the two-body exciton-exciton annihilation governs the exciton recombination initially with a decay rate of ∼ 10 − 8 cm3s−1. The detailed analysis suggests that the fraction of total excitons that decay via long decay channel decreases with increasing exciton density for 2H–MoSe2, in contrast to 1T/2H–MoSe2 where the fraction of excitons decaying via long decay channel remains constant. [ABSTRACT FROM AUTHOR]

Constructing metal-semiconductor interfaces by loading metal atoms onto two-dimensional material to build atomically dispersed single-atom catalysts (SACs) has emerged as a new frontier for improving atom utilization and designing multifunctional electrocatalysts. Nowadays, studies on black phosphorus nanosheets in electrocatalysis have received much attention and the successful preparation of metal nanoparticle/black phosphorus (BP) hybrid electrocatalysts indicates BP nanosheets can serve as a potential support platform for SACs. Herein, by using large-scale ab initio calculations, we explored a large composition space of SACs with transition metal atoms supported on BP monolayer (M-BP) and built a comprehensive picture of activity trend, stability, and electronic origin towards oxygen reduction and evolution reaction (ORR and OER) and hydrogen evolution reaction (HER). The results show that the catalytic activity can be widely tuned by reasonable regulation of metal atoms. Ni-, Pd-, and Pt-BP could effectively balance the binding strength of the target intermediates, thus achieving efficient bifunctional activity for OER and ORR. Favorable bifunctional catalytic performance for OER and HER can be realized on Rh-BP. Especially, Pt-BP exhibits promising trifunctional activity towards OER, ORR, and HER. Multiple-level corrections among overpotential, Gibbs free energy, orbital population, and d-band center reveal that the trend and origin of catalytic activity are intrinsically determined by the d-band center of metal sites. The thermodynamic and dynamic stability simulations demonstrate that the active metal centers are firmly anchored on BP substrate with intact M-P bonds. These findings provide a theoretical basis for the rational design of BP-based SACs toward promising multifunctional activity. [ABSTRACT FROM AUTHOR]

Pseudopotential locality errors have hampered the applications of the diffusion Monte Carlo (DMC) method in materials containing transition metals, in particular oxides. We have developed locality error free effective core potentials, pseudo-Hamiltonians, for transition metals ranging from Cr to Zn. We have modified a procedure published by some of us in Bennett et al. [J. Chem. Theory Comput. 18, 828 (2022)]. We carefully optimized our pseudo-Hamiltonians and achieved transferability errors comparable to the best semilocal pseudopotentials used with DMC but without incurring in locality errors. Our pseudo-Hamiltonian set (named OPH23) bears the potential to significantly improve the accuracy of many-body-first-principles calculations in fundamental science research of complex materials involving transition metals. [ABSTRACT FROM AUTHOR]

Nanosheets of transition metal dichalcogenides with prospects of photocatalysis and optoelectronics applications have significant potential in device fabrication due to their low-cost production and easily controllable morphology. Here, non-degenerate pump-probe differential transmission studies with varying pump-fluence have been carried out on single-phase 2H–MoSe2 and mixed-phase 1T/2H–MoSe2 nanosheets to characterize their excited carrier dynamics. For both the samples, the differential probe transmission data show photo-induced bleaching at earlier pump-probe delay followed by photo-induced absorption unveiling signatures of exciton-state filling, exciton trapping, defect-mediated photo-induced probe absorption and recombination of defect bound excitons. The exciton trapping and photo-induced absorption by the trapped-carriers are estimated to occur with time constant of ∼430 to 500 fs based on multi-exponential modelling of the differential transmission till pump-probe delay of ∼3.5 ps. Biexponential modeling of the subsequent slow-recovery of the negative differential transmission at pump-probe delay ≳3.5 ps reveals that the exciton recombination happens via two distinct decay channels with ∼25 to 55 ps (τ1) and ≳1 ns (τ2) time constants. Pump-fluence dependent reduction in τ1 and further modelling of exciton population using higher order kinetic rate equation reveals that the two-body exciton-exciton annihilation governs the exciton recombination initially with a decay rate of ∼ 10 − 8 cm3s−1. The detailed analysis suggests that the fraction of total excitons that decay via long decay channel decreases with increasing exciton density for 2H–MoSe2, in contrast to 1T/2H–MoSe2 where the fraction of excitons decaying via long decay channel remains constant. [ABSTRACT FROM AUTHOR]

The activity of Li-intercalated MoS2 phases for the hydrogen evolution reaction is investigated using density functional theory. The most stable semiconducting 2H phase, the metallic 1T′ phase, and a polymorphous surface composed of alternating H and T′ phases (1T″) are investigated. The local structure of the MoS2 surface is found to define its reactivity. In all cases, active sites for the hydrogen evolution process are restricted to T-like sulphur sites. Li-intercalation is found to promote hydrogen evolution reaction reactivity for the H phase whilst having little effect on the T phase. While improved compared to the non-intercalated phase, the Li-intercalated H phase MoS2 still has minimal activity for the hydrogen evolution reaction. The same effect of intercalation is also found for another transition metal dichalcogenide, MoSe2. The ability to improve reactivity in this way makes ion intercalation a promising space for designing new 2D catalysts for the hydrogen evolution reaction. [ABSTRACT FROM AUTHOR]

Despite widespread interest in the phase-change applications of vanadium dioxide (VO2), the fabrication of high-quality VO2 thin films with elevated transition temperatures (TIMT) and high insulator–metal-transition resistance switching still remains a challenge. This study introduces a two-step atmospheric oxidation approach to fabricate bilayer VO2−x/VO2 films on a c-plane sapphire substrate. To quantify the impact of the VO2 buffer layer, a single-layer VO2 film of the same thickness was also fabricated. The bilayer VO2−x/VO2 films, wherein the top VO2−x film was under-oxidized, demonstrated an elevation in TIMT reaching ∼97 °C, one of the highest reported to date for VO2 films and is achieved in a doping-free manner. Our results also reveal a one-order increase in resistance switching, with the optimum bilayer VO2/VO2 film exhibiting ∼3.6 orders of switching from 25 to 110 °C, compared to the optimum single-layer VO2 reference film. This is accompanied by a one-order decrease in the on-state resistance in its metallic phase. The elevation in TIMT, coupled with increased strain extracted from the XRD characterization of the bilayer film, suggests the possibility of compressive strain along the c-axis. These VO2−x/VO2 films also demonstrate a significant change in the slope of their resistance vs temperature curves contrary to the conventional smooth transition. This feature was ascribed to the rutile/monoclinic quasi-heterostructure formed due to the top VO2−x film having a reduced TIMT. Our findings carry significant implications for both the lucid fabrication of VO2 thin film devices as well as the study of phase transitions in correlated oxides. [ABSTRACT FROM AUTHOR]

A real-space method using generating integers is used to determine possible commensurate lattice Moiré patterns for a bilayer of two equal hexagonal lattices, which can in principle be extended to lattice mismatched bilayers. These Moiré patterns can be classified by a pair of relatively prime integers (n , m) , wherein a rotation θ (n , m) of the top hexagonal lattice maps its lattice vector (n , m) to (m , n) of the bottom lattice. Within this formulation, the area of the commensurate supercell is proportional to (n 2 + m 2 + n m) and the number of coincident lattice sites per supercell is given by (n − m) 2. Taking bilayer boron nitride (BN) as an example, we present how to systematically generate Moiré patterns and explore the differences in local chemistry in the interstitial region by impurity intercalation. Systematic calculations of the properties of intercalated 3d transition metals were performed in an h-BN (4 , 3) bilayer, corresponding to a rotation of 9.43 degrees. These calculations reveal that local symmetry in the intercalated region significantly affect the energetics and magnetization of the intercalated species. These results highlight that Moiré pattern physics is not limited to optoelectronic/electronic phenomena, such as interfacial exciton formation or magic angle superconductivity, but it also produces chemical and magnetic atomic site selectivity, which may play important roles in adsorption, catalysis, or quantum information. [ABSTRACT FROM AUTHOR]

The activity of Li-intercalated MoS2 phases for the hydrogen evolution reaction is investigated using density functional theory. The most stable semiconducting 2H phase, the metallic 1T′ phase, and a polymorphous surface composed of alternating H and T′ phases (1T″) are investigated. The local structure of the MoS2 surface is found to define its reactivity. In all cases, active sites for the hydrogen evolution process are restricted to T-like sulphur sites. Li-intercalation is found to promote hydrogen evolution reaction reactivity for the H phase whilst having little effect on the T phase. While improved compared to the non-intercalated phase, the Li-intercalated H phase MoS2 still has minimal activity for the hydrogen evolution reaction. The same effect of intercalation is also found for another transition metal dichalcogenide, MoSe2. The ability to improve reactivity in this way makes ion intercalation a promising space for designing new 2D catalysts for the hydrogen evolution reaction. [ABSTRACT FROM AUTHOR]