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In this study, to reveal the origin of the Z½ center, a lifetime killer in n-type 4H-SiC, the concentrations of the Z½ center and point defects are compared in the same samples, using deep level transient spectroscopy (DLTS) and electron paramagnetic resonance (EPR). The Z½ concentration in the samples is varied by irradiation with 250 keV electrons with various fluences. The concentration of a single carbon vacancy (VC) measured by EPR under light illumination can well be explained with the Z½ concentration derived from C-V and DLTS irrespective of the doping concentration and the electron fluence, indicating that the Z½ center originates from a single VC. [ABSTRACT FROM AUTHOR]

High purity silicon carbide (SiC) materials are of interest from high-power high temperature applications across recent photo-voltaic cells to hosting solid state quantum bits, where the tight control of electrically, optically, and magnetically active point defects is pivotal in these areas. 4H- and 6H-SiC substrates are grown at high temperatures and the incorporation of transition metal impurities is common. In unintentionally Nb-doped 4H- and 6H-SiC substrates grown by high-temperature chemical vapor deposition, an electron paramagnetic resonance (EPR) spectrum with C1h symmetry and a clear hyperfine (hf) structure consisting of ten equal intensity hf lines was observed. The hf structure can be identified as due to the interaction between the electron spin S = 1/2 and the nuclear spin of 93Nb. Additional hf structures due to the interaction with three Si neighbors were also detected. In 4H-SiC, a considerable spin density of ∼37.4% was found on three Si neighbors, suggesting the defect to be a complex between Nb and a nearby carbon vacancy (VC). Calculations of the 93Nb and 29Si hf constants of the neutral Nb on Si site, NbSi0, and the Nb-vacancy defect, NbSiVC0, support previous reported results that Nb preferentially forms an asymmetric split-vacancy (ASV) defect. In both 4H- and 6H-SiC, only one Nb-related EPR spectrum has been observed, supporting the prediction from calculations that the hexagonal-hexagonal defect configuration of the ASV complex is more stable than others. [ABSTRACT FROM AUTHOR]

The Z1/2 center in n-type 4H-SiC epilayers-a dominant deep level limiting the carrier lifetime-has been investigated. Using capacitance versus voltage (C-V) measurements and deep level transient spectroscopy (DLTS), we show that the Z1/2 center is responsible for the carrier compensation in n-type 4H-SiC epilayers irradiated by low-energy (250 keV) electrons. The concentration of the Z1/2 defect obtained by C-V and DLTS correlates well with that of the carbon vacancy (VC) determined by electron paramagnetic resonance, suggesting that the Z1/2 deep level originates from VC. [ABSTRACT FROM AUTHOR]