79 results on '"Tibault Reveyrand"'
Search Results
2. Analysis of load mismatch effect compensation in Doherty power amplifier
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Pierre Medrel, Philippe Bouysse, Alexis Courty, Tibault Reveyrand, Geoffroy Soubercaze-Pun, Jean-Michel Nebus, Ampleon, Systèmes RF (XLIM-SRF), XLIM (XLIM), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), and Centre National d'Études Spatiales [Toulouse] (CNES)
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Computer science ,Clipping (signal processing) ,Amplifier ,020208 electrical & electronic engineering ,020206 networking & telecommunications ,02 engineering and technology ,Power (physics) ,Compensation (engineering) ,Harmonic balance ,0202 electrical engineering, electronic engineering, information engineering ,Electronic engineering ,Object-relational impedance mismatch ,Radio frequency ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,Electrical and Electronic Engineering ,ComputingMilieux_MISCELLANEOUS ,Voltage - Abstract
This paper presents a theoretical and experimental analysis of the capabilities of the dual-input Doherty power amplifier (DPA) architecture to mitigate efficiency and output power degradations when used in a mismatched load environment. Following a simplified linear piecewise approach, an analytical demonstration is proposed to derive optimal radio frequency drives applied to the Auxiliary path of the DPA to restore power performances while avoiding large signal voltage clipping of active cells. The proposed analytical study is corroborated with harmonic balance simulated results of a C-band, 20-W GaN DPA prototype. The fabricated dual-input DPA prototype has been measured under 1.5-VSWR mismatch configurations to validate the proposed analysis.
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- 2020
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3. Accurate characterization of intermodulation noise in multi carrier wide band power amplifiers based on a digital synthesis of pseudo noise gaussian stimuli.
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Tibault Reveyrand, Denis Barataud, Jean-Michel Nebus, Alain Mallet, Francis Gizard, Luc Lapierre, and Jacques Sombrin
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- 2006
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4. SOLT and SOLR calibration methods using a single multiport 'thru' standard connection
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Edouard Ngoya, Sébastien Mons, Tibault Reveyrand, Silvia Hernandez, XLIM (XLIM), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), C2S2, and Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)
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Nonlinear system ,Computer science ,020208 electrical & electronic engineering ,0202 electrical engineering, electronic engineering, information engineering ,Calibration ,Electronic engineering ,020206 networking & telecommunications ,02 engineering and technology ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,ComputingMilieux_MISCELLANEOUS ,Connection (mathematics) - Abstract
This paper studies on the calibration of a multiport Nonlinear Vector Network Analyzer (NVNA), especially the relative calibration techniques. From the 8-term error model, we present two new alternative multiport “thru” calibrating procedures that reduce the number of connections to one by considering a multiport “thru” standard. Those two methods may be seen as multiport extensions of Short-Open-Load-Thru (SOLT) and Short-Open-Load-Reciprocal (SOLR) calibration techniques. Those new methods have been used successfully to calibrate a multiport NVNA. Finally multiport conversion from 8-term NVNA error model to standard 12-term VNA error model is presented.
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- 2020
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5. An Experimental Study for the Design of Dual Input Load Modulated Wideband GaN Amplifier
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P. Bouysse, Geoffroy Soubercaze-Pun, Luc Lapierre, J.M. Nebus, Tibault Reveyrand, A. Courty, Pierre Medrel, Reveyrand, Tibault, Systèmes RF (XLIM-SRF), XLIM (XLIM), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), and Centre National d'Études Spatiales [Toulouse] (CNES)
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Power gain ,Materials science ,Amplifier ,[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,020208 electrical & electronic engineering ,Bandwidth (signal processing) ,020206 networking & telecommunications ,02 engineering and technology ,High-electron-mobility transistor ,7. Clean energy ,Power over ,0202 electrical engineering, electronic engineering, information engineering ,Electronic engineering ,Relative phase ,Wideband ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,Drain efficiency ,ComputingMilieux_MISCELLANEOUS - Abstract
In this paper, we present an experimental study focused on the characterization of a dual input Doherty Power Amplifier (DPA). A calibrated set-up is used for an accurate characterization of a DPA demonstrator and the study of several input driving conditions. A demonstrator PA which uses two packaged 10-W GaN HEMT from Wolfspeed was fabricated. Measurements obtained for several driving conditions (power levels and relative phase differences) show Drain Efficiency (DE) performances of DE≈55% at 6-dB Output Back Off (OBO) and DE≈60% at 20-W saturated power over a 2.1-2.6 GHz bandwidth. The main focus of the paper concerns the trade-off between efficiency and power gain shape versus output power that can be obtained with dual input architectures and input signal driving conditions.
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- 2019
6. Automatic vector signal generator calibration method suitable for multiport large-signal measurements
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Tibault Reveyrand, J.M. Nebus, Pierre Medrel, A. Courty, P. Bouysse, M. Portelance, Reveyrand, Tibault, XLIM (XLIM), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), Systèmes RF (XLIM-SRF), and Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)
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Signal generator ,Computer science ,Amplifier ,[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,020208 electrical & electronic engineering ,Phase (waves) ,020206 networking & telecommunications ,02 engineering and technology ,Signal ,Power (physics) ,0202 electrical engineering, electronic engineering, information engineering ,Calibration ,Electronic engineering ,Baseband ,Radio frequency ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,ComputingMilieux_MISCELLANEOUS - Abstract
The increasing need for measurement setups including several vector signal generators is associated with the creation of multiple input amplifiers such as digital Doherty, outphasing techniques or amplifier with a RF load matching control such as Load Modulated Balanced Amplifiers (LMBA). Therefore, an absolute calibration, in amplitude and phase of the sources has to be performed. A complete and automated calibration method for multiport generation is presented here. It introduces, as a new standard, a multiport passive device previously characterized in S-parameters. This method is detailed analytically and validated experimentally. Calibrated measurements of dual input power amplifiers are also presented.
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- 2019
7. Distributed Modeling of 4-Port Transistor for Linear mmW Design Application
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Tibault Reveyrand, Luc Lapierre, Bernard Jarry, Vincent Armengaud, Julien Lintignat, Wafa Khelifi, Raymond Quéré, Systèmes RF (XLIM-SRF), XLIM (XLIM), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), and Centre National d'Études Spatiales [Toulouse] (CNES)
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Basis (linear algebra) ,Passive networks ,Computer science ,Transistor ,020206 networking & telecommunications ,Port (circuit theory) ,02 engineering and technology ,High-electron-mobility transistor ,Active devices ,law.invention ,Set (abstract data type) ,Network element ,law ,0202 electrical engineering, electronic engineering, information engineering ,Electronic engineering ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,ComputingMilieux_MISCELLANEOUS - Abstract
This paper presents an approach for the distributed modeling of a 4-port transistor. The proposed principle relies on considering any multi-finger transistor as the association of a number of elementary active linked together with extrinsic passive networks. An electromagnetic analysis allows to set the electrical equivalent scheme of the passive networks whereas the internal active device is defined by an equivalent model. It is shown how the equivalent intrinsic device (based on 2 fingers) and the values of the suitably defined distributed parasitic network elements can be accurately extracted and modeled on the basis of standard measurements. This approach is validated by the comparison of measured and simulated results for a GaAs HEMT transistor in the Ku-band.
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- 2018
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8. Multiport conversions between S, Z, Y, h, ABCD, and T parameters
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Tibault Reveyrand, XLIM (XLIM), and Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)
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Physics ,020208 electrical & electronic engineering ,020206 networking & telecommunications ,02 engineering and technology ,computer.software_genre ,Prime (order theory) ,Simulation software ,Cascade ,0202 electrical engineering, electronic engineering, information engineering ,Order (group theory) ,Embedding ,Applied mathematics ,Matrix form ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,computer ,ComputingMilieux_MISCELLANEOUS ,Electronic circuit - Abstract
This paper presents main formulas to convert S, Z, Y, h, ABCD and T parameters of multiport circuits. Formulas are presented in matrix form, and some restrictions on unbalanced systems for cascade parameters are discussed. Those expressions are prime of importance in order to analyze and optimize multiport systems without any simulation software.
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- 2018
9. A Comparative Overview of Digital Predistortion Behavioral Modeling for Multi-standards Applications
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Houssam Eddine Hamoud, Sébastien Mons, Tibault Reveyrand, Edouard Ngoya, Systèmes RF (XLIM-SRF), XLIM (XLIM), Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), and Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)
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Emulation ,Test bench ,Computer science ,Amplifier ,020206 networking & telecommunications ,02 engineering and technology ,Predistortion ,Behavioral modeling ,Reduction (complexity) ,Darlington transistor ,[SPI]Engineering Sciences [physics] ,0202 electrical engineering, electronic engineering, information engineering ,Electronic engineering ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,MATLAB ,computer ,ComputingMilieux_MISCELLANEOUS ,computer.programming_language - Abstract
This work proposes a comparative study of three Digital predistortion (DPD) models, TPM (Two Path Memory based Volterra), GMP (Generalized Memory Polynomial), DDR (Dynamic Deviation Reduction) for multi standard system operation purpose. This paper is an extension of our previous work based on simulation data sets [1]. This assessment is conducted through measurements on a Silicon Bipolar Darlington Amplifier in two parts: the DPD models identification first, then their emulation with MATLAB in a specific measurements test bench to evaluate each DPD model with the power amplifier (PA).
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- 2018
10. Non-linear Characterization and Modeling of 3-port Transistor
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Bernard Jarry, Julien Lintignat, L. Lapierre, D. Langrez, Tibault Reveyrand, W. Khelifi, Vincent Armengaud, Raymond Quéré, Systèmes RF (XLIM-SRF), XLIM (XLIM), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), Thales Alenia Space, and Centre National d'Études Spatiales [Toulouse] (CNES)
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Computer science ,Transistor ,020206 networking & telecommunications ,Port (circuit theory) ,02 engineering and technology ,High-electron-mobility transistor ,Ku band ,law.invention ,Characterization (materials science) ,Nonlinear system ,law ,Nonlinear model ,0202 electrical engineering, electronic engineering, information engineering ,Scattering parameters ,Electronic engineering ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,ComputingMilieux_MISCELLANEOUS - Abstract
This paper presents a 3-port modeling and electrical characterization methodology for a GaAs HEMT transistor. From the I-V measurements and the S-parameters, a nonlinear model has been developed. The interest of this methodology is to determine accurate 3-port nonlinear model in high frequencies compared to the standard 2-port modeling approach provided by foundries. The modeling methodology presented in this paper has been validated up to 40 GHz for several bias points on a transistor expected for a Ku-band LNA design. Accuracy of this approach is highlighted by simulation and measurements comparisons.
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- 2018
11. Evaluation of a DPD approach for multi standard applications
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Sébastien Mons, Houssam Eddine Hamoud, Damien Gappilout, Tibault Reveyrand, Edouard Ngoya, Systèmes RF (XLIM-SRF), XLIM (XLIM), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), and Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)
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Polynomial ,Computer science ,05 social sciences ,Bandwidth (signal processing) ,050209 industrial relations ,Volterra series ,Topology ,Darlington transistor ,[SPI]Engineering Sciences [physics] ,Discrete time and continuous time ,0502 economics and business ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,050203 business & management ,ComputingMilieux_MISCELLANEOUS - Abstract
This paper exposes the evaluation of a DPD model targeting multi standard communication applications. The model is based on a continuous time modelling approach as opposite to classical discrete time approach like Volterra series and memory polynomials. It is known as Two Path Memory (TPM) model approach. In this work, the TPM DPD model is extracted and evaluated from measurements for a Silicon Bipolar Darlington Amplifier.
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- 2018
12. A fully calibrated NVNA set-up for linearity characterization of RF power devices using Unequally Spaced Multi-Tone signal through IM3 & IM5 measurements
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Tibault Reveyrand, Vincent Gillet, Sylvain Laurent, Jean-Pierre Teyssier, Michel Prigent, Raymond Quéré, Systèmes RF (XLIM-SRF), XLIM (XLIM), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), and Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)
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Power-added efficiency ,Test bench ,Computer science ,Amplifier ,020208 electrical & electronic engineering ,RF power amplifier ,Bandwidth (signal processing) ,Linearity ,020206 networking & telecommunications ,02 engineering and technology ,[SPI.TRON]Engineering Sciences [physics]/Electronics ,0202 electrical engineering, electronic engineering, information engineering ,Electronic engineering ,Radio frequency ,ComputingMilieux_MISCELLANEOUS ,Intermodulation - Abstract
This paper presents an innovative experimental method and its associated test bench for assessing the in-band linearity degradation of radiofrequency and microwave power devices, suitable both for on-wafer and connectorized characterization. The Unequally Spaced Multi-Tone (USMT) signal is a tailored signal which presents flexible characteristics depending on the number of pilot tones (e.g. Peak to average radio, IQ enveloppe, and Radiofrequency bandwidth). It behaves like a complex modulation signal with particularity to have a complete separation of pilot tones, IM3 and IM5 and it was used for linearity measurements. The method has been used up to 28 MHz RF Bandwidth on a VNA with the spectrum option (PNA-L from Keysight Technologies). The USMT set-up enables very fast measurements. In only one acquisition, simultaneous criteria are evaluated, like output power, gain, Power Added Efficiency (PAE), in-band degradation such as Carrier to Intermodulation ratio (C/I) induced by the device, by measuring the USMT signal at the input and output ports of the DUT. This novel approach has been validated through the linearity characterization of a commercial power amplifier.
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- 2018
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13. Load Modulation Measurements of X-Band Outphasing Power Amplifiers
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Michael Litchfield, Tibault Reveyrand, and Zoya Popovic
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Engineering ,Radiation ,business.industry ,Amplifier ,Electrical engineering ,X band ,Condensed Matter Physics ,Power (physics) ,Electricity generation ,Power Balance ,Modulation ,Electronic engineering ,Radio frequency ,Electrical and Electronic Engineering ,business ,Monolithic microwave integrated circuit - Abstract
This paper presents an in-depth investigation of both isolated and non-isolated outphasing power amplifiers, with and without supply modulation. X-band GaN MMIC power amplifiers with 70% power-added efficiency and 2.7 W output power at 10.1 GHz are configured in hybrid outphasing circuits with several combiners that include bi-directional couplers, enabling calibrated measurements of internal load modulation. It is experimentally demonstrated that the load modulation critically depends on the power balance of the two internal MMIC PAs. Despite the additional loss in the combiner, peak total efficiencies greater than 47% are achieved by full outphasing PAs with more than 3.7 W of output power. A comparison between several outphasing configurations quantifies the improvement in efficiency for both isolated and non-isolated outphasing PAs with supply modulation.
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- 2015
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14. Design, modeling and characterization of MMIC integrated cascode cell for compact Ku-band power amplifiers
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Raphaël Sommet, Adeline Déchansiaud, Diane Bouw, Tibault Reveyrand, Francois Deborgies, Raymond Quéré, Christophe Chang, Marc Camiade, C2S2 (XLIM-C2S2), XLIM (XLIM), and Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)
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Engineering ,business.industry ,Amplifier ,020208 electrical & electronic engineering ,Transistor ,Electrical engineering ,020206 networking & telecommunications ,Common source ,02 engineering and technology ,High-electron-mobility transistor ,7. Clean energy ,Ku band ,[SPI.TRON]Engineering Sciences [physics]/Electronics ,law.invention ,Semiconductor ,law ,Hardware_INTEGRATEDCIRCUITS ,0202 electrical engineering, electronic engineering, information engineering ,Cascode ,Electrical and Electronic Engineering ,business ,Monolithic microwave integrated circuit - Abstract
International audience; This paper reports on the design of a new power cell dedicated to Ku-band power amplifier (PA) applications. This cell called "integrated cascode" has been designed in order to propose a strong decrease in terms of circuit size for PA. The technology used relies on 0.25-μm GaAs pseudomorphic high electron mobility transistors (PHEMT) of United Monolithic Semiconductors (UMS) foundry. A distributed approach is proposed in order to model this power cell. The challenge consists of obtaining, with a better shape factor (ratio between the vertical and horizontal sizes of the transistor), the same performances than a single transistor with the same gate width. In order to design a 2W amplifier, we have used two 12 × 100 μm transistors. Cascode vertical size is 413 μm whereas a transistor with the same gate width exhibits a vertical size of 790 μm. Therefore, the shape factor is nearly one as compared to a shape factor of 4 for a classical parallel architecture. This new device allows us to decrease the Monolithic microwave integrated circuit amplifier area of 40% compared to amplifier based on single transistors.
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- 2013
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15. Microwave Transistor Power Rectifiers and Applications
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Michael Litchfield, Tibault Reveyrand, Ignacio Ramos, and Zoya Popovic
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Materials science ,business.industry ,Amplifier ,020208 electrical & electronic engineering ,Electrical engineering ,020206 networking & telecommunications ,Gallium nitride ,02 engineering and technology ,Microwave engineering ,Converters ,chemistry.chemical_compound ,chemistry ,0202 electrical engineering, electronic engineering, information engineering ,Electronic engineering ,Radio frequency ,Wireless power transfer ,business ,Monolithic microwave integrated circuit ,Microwave transistors - Abstract
This paper presents design, analysis and experimental results on synchronous and self- synchronous microwave transistor rectifiers implemented with GaN HEMTs at frequencies from 2 to 10GHz. The rectifier/power amplifier duality is explained and measurements confirming this mode of operation are presented. Finally, rectifier applications in wireless power transfer and high- frequency integrated dc-dc converters are discussed, including a GaN MMIC dc-dc converter switching at 4.6GHz.
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- 2016
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16. High-Efficiency Harmonically Terminated Diode and Transistor Rectifiers
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Erez Falkenstein, Tibault Reveyrand, Ignacio Ramos, Michael Roberg, Zoya Popovic, C2S2 (XLIM-C2S2), XLIM (XLIM), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), Electrical, Computer and Energy Engineering [Boulder] (ECEE), and University of Colorado [Boulder]
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Engineering ,Radiation ,business.industry ,Amplifier ,020208 electrical & electronic engineering ,RF power amplifier ,Transistor ,Load pull ,Electrical engineering ,020206 networking & telecommunications ,02 engineering and technology ,Peak inverse voltage ,Condensed Matter Physics ,Precision rectifier ,law.invention ,Rectifier ,law ,0202 electrical engineering, electronic engineering, information engineering ,Power semiconductor device ,Electrical and Electronic Engineering ,business ,ComputingMilieux_MISCELLANEOUS - Abstract
This paper presents a theoretical analysis of harmonically terminated high-efficiency power rectifiers and experimental validation on a class-C single Schottky-diode rectifier and a class- F-1 GaN transistor rectifier. The theory is based on a Fourier analysis of current and voltage waveforms, which arise across the rectifying element when different harmonic terminations are presented at its terminals. An analogy to harmonically terminated power amplifier (PA) theory is discussed. From the analysis, one can obtain an optimal value for the dc load given the RF circuit design. An upper limit on rectifier efficiency is derived for each case as a function of the device on-resistance. Measured results from fundamental frequency source-pull measurement of a Schottky diode rectifier with short-circuit terminations at the second and third harmonics are presented. A maximal device rectification efficiency of 72.8% at 2.45 GHz matches the theoretical prediction. A 2.14-GHz GaN HEMT rectifier is designed based on a class-F-1 PA. The gate of the transistor is terminated in an optimal impedance for self-synchronous rectification. Measurements of conversion efficiency and output dc voltage for varying gate RF impedance, dc load, and gate bias are shown with varying input RF power at the drain. The rectifier demonstrates an efficiency of 85% for a 10-W input RF power at the transistor drain with a dc voltage of 30 V across a 98-Ω resistor.
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- 2012
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17. Compact RF non-linear electro thermal model of SiGe HBT for the design of broadband ADC's
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A. Saleh, Abdel Kader El Rafei, Raymond Quéré, Tibault Reveyrand, Mountakha Dieng, Raphaël Sommet, Jean-Michel Nebus, C2S2 (XLIM-C2S2), XLIM (XLIM), and Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)
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Transistor model ,Engineering ,Heterojunction bipolar transistor ,Topology (electrical circuits) ,Hardware_PERFORMANCEANDRELIABILITY ,02 engineering and technology ,Integrated circuit ,7. Clean energy ,01 natural sciences ,law.invention ,law ,0103 physical sciences ,Broadband ,Hardware_INTEGRATEDCIRCUITS ,0202 electrical engineering, electronic engineering, information engineering ,Electronic engineering ,Electrical and Electronic Engineering ,010302 applied physics ,business.industry ,020208 electrical & electronic engineering ,Transistor ,Electrical engineering ,Converters ,[SPI.TRON]Engineering Sciences [physics]/Electronics ,Nonlinear system ,business - Abstract
International audience; The design of high speed integrated circuits heavily relies on circuit simulation and requires compact transistor models. This paper presents a non-linear electro-thermal model of SiGe heterojunction-bipolar transistor (HBT). The non-linear model presented in this paper uses a hybrid π topology and it is extracted using IV and S-parameter measurements. The thermal sub-circuit is extracted using low-frequency S-parameter measurements. The model extraction procedure is described in detail. It is applied here to the modeling of npn SiGe HBTs. The proposed non-linear electro-thermal model is expected to be used for the design of high-speed electronic functions such as broadband analog digital converters in which both electrical and thermal aspects are engaged. The main focus and contribution of this paper stands in the fact that the proposed non-linear model covers wideband-frequency range (up to 65 GHz).
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- 2012
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18. Electrical modeling of packaged GaN HEMT dedicated to internal power matching in S-band
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Tibault Reveyrand, Michel Stanislawiak, Jerome Cheron, Denis Barataud, Didier Floriot, Philippe Eudeline, Michel Campovecchio, C2S2 (XLIM-C2S2), XLIM (XLIM), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), Thales Air Systems, Thales Group [France]-Thales Group [France], and Thales Group [France]
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Materials science ,Gallium nitride ,02 engineering and technology ,Integrated circuit ,High-electron-mobility transistor ,Modelling ,Die (integrated circuit) ,law.invention ,chemistry.chemical_compound ,law ,Hardware_INTEGRATEDCIRCUITS ,0202 electrical engineering, electronic engineering, information engineering ,Electrical and Electronic Engineering ,Simulation and characterizations of devices and circuits ,business.industry ,Amplifier ,020208 electrical & electronic engineering ,Electrical engineering ,020206 networking & telecommunications ,Capacitor ,chemistry ,Power Amplifiers and Linearizers ,Optoelectronics ,Equivalent circuit ,Radio frequency ,business - Abstract
International audience; The electrical modeling of power packages is a major issue for designers of high-efficiency hybrid power amplifiers. This paper reports the synthesis and the modeling of a packaged Gallium nitride (GaN) High electron mobility transistor (HEMT) associating a nonlinear model of the GaN HEMT die with an equivalent circuit model of the package. The extraction procedure is based on multi-bias S-parameter measurements of both packaged and unpackaged (on-wafer) configurations. Two different designs of 20 W packaged GaN HEMTs illustrate the modeling approach that is validated by time-domain load-pull measurements in S-band. The advantage of the electrical modeling dedicated to packaged GaN HEMTs is to enable a die-package co-design for power matching. Internal matching elements such as Metal oxide semiconductor (MOS) capacitors, Monolithic microwave integrated circuits (MMICs), and bond wires can be separately modeled to ensure an efficient optimization of the package for high power Radio frequency (RF) applications.
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- 2012
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19. Broadband Time-Domain Measurement System for the Characterization of Nonlinear Microwave Devices With Memory
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Denis Barataud, Guillaume Neveux, Jean-Pierre Teyssier, A. Saleh, Mouhamad Abouchahine, Jean-Michel Nebus, Tibault Reveyrand, Danielle Rousset, C2S2, XLIM (XLIM), and Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)
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Engineering ,Radiation ,Sideband ,business.industry ,Amplifier ,020208 electrical & electronic engineering ,Bandwidth (signal processing) ,Electrical engineering ,020206 networking & telecommunications ,02 engineering and technology ,Condensed Matter Physics ,Amplitude modulation ,Broadband ,Hardware_INTEGRATEDCIRCUITS ,0202 electrical engineering, electronic engineering, information engineering ,Electronic engineering ,Time domain ,Radio frequency ,Electrical and Electronic Engineering ,Wideband ,business - Abstract
International audience; This paper describes a novel fully calibrated four channel broadband time-domain measurement system for the characterization of nonlinear microwave devices with memory. The hardware architecture of the proposed time-domain measurement system is based on a wideband sub-sampling principle. The sampling heads work at a high strobe signal repetition frequency that can be tuned between 357-536 MHz. We achieve a 40-GHz RF frequency bandwidth and a 160-MHz IF bandwidth. This instrument enables the measurement of carrier and envelope waveforms at both ports of nonlinear microwave devices driven by broadband modulated multicarriers. The test-bench is applied to the cross modulation characterization of a 15-W GaN HEMT CREE S-band power amplifier with memory due to different biasing circuit configurations. The amplifier under test is driven by the sum of a large-signal modulated carrier (double-sideband amplitude modulation at 3.6 GHz) and a small single-tone signal at a 110-MHz offset frequency. Our significant contribution comes from the capability of the measurement system to record the time-domain waveforms of several nonadjacent modulated signals on a similar time equivalent scale for different cases of memory effects of the power amplifier under test.
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- 2010
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20. GaN transistor characterization and modeling activities performed within the frame of the KorriGaN project
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Raymond Quéré, Ernesto Limiti, Giovanni Ghione, Tibault Reveyrand, Olivier Jardel, Vittorio Camarchia, Antonio Serino, Walter Ciccognani, Federica Cappelluti, C2S2, XLIM (XLIM), and Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)
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Engineering ,Noise model ,GaN Transistor ,Nonlinear model ,02 engineering and technology ,Integrated circuit ,High-electron-mobility transistor ,7. Clean energy ,01 natural sciences ,Noise (electronics) ,Load-pull measurements ,Power amplifier ,Trapping effects ,law.invention ,law ,0103 physical sciences ,0202 electrical engineering, electronic engineering, information engineering ,Electronic engineering ,Electrical and Electronic Engineering ,Electronic circuit ,010302 applied physics ,business.industry ,Amplifier ,Frame (networking) ,Transistor ,Electrical engineering ,020206 networking & telecommunications ,Nonlinear system ,business - Abstract
The present paper presents the transistor modeling work achieved in the GaN European project KorriGaN (“Key Organisation for Research in Integrated Circuits in GaN technology”). The KorriGaN project (2005–09) has released 29 GaN circuits such as high-power amplifiers (HPAs), low-noise amplifiers (LNAs), and switches. Modeling is one of the main key to reach successful designs. Therefore, nonlinear models of European GaN HEMT models have been developed. This work deals with characterization tools such as pulsed IV, pulsed [S] parameters, load-pull measurements, and measurement-based methods to perform GaN HEMT compact models parameters extraction. The present paper will describe the transistor modeling activities in KorriGaN for HPA designs (nonlinear models including trapping and/or self-heating effects) and LNA designs (nonlinear models and noise parameters).
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- 2010
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21. Time-Domain Calibrated Measurements of Wideband Multisines Using a Large-Signal Network Analyzer
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Jérôme Puech, J.M. Nebus, Guillaume Neveux, Tibault Reveyrand, F. Gizard, F. Verbeyst, M. El Yaagoubi, Denis Barataud, C2S2, XLIM (XLIM), and Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)
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Engineering ,Radiation ,business.industry ,Frequency multiplier ,020208 electrical & electronic engineering ,Comb generator ,020206 networking & telecommunications ,02 engineering and technology ,Condensed Matter Physics ,Network analyzer (electrical) ,Harmonic analysis ,Frequency grid ,0202 electrical engineering, electronic engineering, information engineering ,Electronic engineering ,Harmonic ,Time domain ,Electrical and Electronic Engineering ,Wideband ,business - Abstract
International audience; This paper presents a calibrated measurement technique that enables phase and magnitude measurements of wideband multisines. This study is based on the use of a large-signal network analyzer (LSNA) performing harmonic sub-sampling and a fine frequency grid (20 MHz) comb generator calibrated using a high-frequency 50-GHz equivalent-time sampling scope. This comb generator is used as a harmonic phase reference generator for the calibration of the LSNA. The research reported here is applied to L-band multisine measurements, but it can be extended to higher microwave frequencies. The motivation of this study is to measure the multipactor phenomena effect in output RF multiplexers of satellite payloads.
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- 2008
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22. An Electrothermal Model for AlGaN/GaN Power HEMTs Including Trapping Effects to Improve Large-Signal Simulation Results on High VSWR
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D. Floriot, Jean-Pierre Teyssier, Jean-Claude Jacquet, Olivier Jardel, Raymond Quéré, Tibault Reveyrand, F. De Groote, and C. Charbonniaud
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Engineering ,Radiation ,business.industry ,High voltage ,High-electron-mobility transistor ,Input impedance ,Condensed Matter Physics ,Network analyzer (electrical) ,Signal ,Power (physics) ,Electronic engineering ,Optoelectronics ,Standing wave ratio ,Electrical and Electronic Engineering ,business ,Electrical impedance - Abstract
A large-signal electrothermal model for AlGaN/GaN HEMTs including gate and drain related trapping effects is proposed here. This nonlinear model is well formulated to preserve convergence capabilities and simulation times. Extensive measurements have demonstrated the impact of trapping effects on the shapes of I(V) characteristics, as well as load cycles. It is shown that accurate modeling of gate-and drain-lag effects dramatically improves the large-signal simulation results. This is particularly true when the output loads deviate from the optimum matching conditions corresponding to real-world simulations. This new model and its modeling approach are presented here. Large-signal simulation results are then reported and compared to load-pull and large-signal network analyzer measurements for several load impedances at high voltage standing wave ratio and at two frequencies.
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- 2007
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23. X-band 10W MMIC high-gain power amplifier with up to 60% PAE
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David Sardin, Tibault Reveyrand, and Zoya Popovic
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High-gain antenna ,Materials science ,business.industry ,Amplifier ,RF power amplifier ,Electrical engineering ,X band ,Optoelectronics ,business ,Monolithic microwave integrated circuit - Published
- 2014
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24. X-band outphasing power amplifier with internal load modulation measurements
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Zoya Popovic, Tibault Reveyrand, and Michael Litchfield
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Engineering ,Electricity generation ,business.industry ,Modulation ,Amplifier ,dBm ,X band ,Electronic engineering ,Radio frequency ,business ,Monolithic microwave integrated circuit ,Power (physics) - Abstract
This paper presents a general measurement based design method for outphasing amplifiers. Both isolated and non-isolated combiners are designed based on individual PA load-pull measurements, in order to load modulate two 0.15μm GaN MMIC power amplifiers at 10.1GHz. Load modulation measurements are performed at ports internal to the PA, with the inclusion of couplers in the combiner and a four-port LSNA, to gain insight into the dynamics of load modulation during outphasing operation. Both outphasing systems exhibit a peak PAE greater than 41.5% at a peak output power greater than 35.7 dBm.
- Published
- 2014
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25. High-efficiency X-Band MMIC GaN power amplifiers operating as rectifiers
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Scott Schafer, Tibault Reveyrand, Michael Litchfield, and Zoya Popovic
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Power-added efficiency ,Rectifier ,Materials science ,business.industry ,Amplifier ,Electrical engineering ,X band ,Optoelectronics ,High-electron-mobility transistor ,business ,Monolithic microwave integrated circuit ,Voltage ,DC bias - Abstract
This paper presents a performance evaluation of GaN X-Band power amplifiers operating as self-synchronous rectifiers. Two single-stage MMIC power amplifiers are characterized under continuous wave conditions at 10.1GHz. One PA is designed with a single 10 × 100μm HEMT in a 0.15μm GaN process, while the other contains two 10 × 100μm power-combined devices. The MMICs exhibit 67% and 56% power added efficiency at V DD = 20V in deep class-AB bias, respectively. In rectifier mode, biased in class-C, the same MMICs show a RF-to-DC efficiency of 64%. The output powers of the two MMIC PAs are around 3.2W. In rectifier mode, the gate DC bias and the load-pull determined RF gate impedance are set for optimal efficiency. The DC load does not affect the efficiency substantially, and can be chosen for a desired voltage or current. The paper demonstrates that high-power efficient GaN rectifiers can be achieved by designing high-efficiency PAs at least up to X-band.
- Published
- 2014
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26. Efficient transmitters and receivers for high-power wireless powering systems
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Scott Schafer, Michael Litchfield, Zoya Popovic, Tibault Reveyrand, Ignacio Ramos, and Sean Korhummel
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Engineering ,Power-added efficiency ,business.industry ,Amplifier ,ComputerSystemsOrganization_COMPUTER-COMMUNICATIONNETWORKS ,Transmitter ,Energy conversion efficiency ,Electrical engineering ,Power (physics) ,Computer Science::Networking and Internet Architecture ,Electronic engineering ,Wireless ,Wireless power transfer ,business ,Fixed wireless ,Computer Science::Information Theory - Abstract
The efficiency of a wireless powering system is maximized when the power transmitter power-added efficiency (PAE), power receiver conversion efficiency (η C ) and wireless coupling efficiency (η W ) are maximized. This paper focuses on a general approach to the design of an efficient transmitter and receiver of a high-power wireless powering system, which is valid for any type of wireless power coupling. Experimental results for high-efficiency power transmitters and receivers at various frequencies and with various power levels are discussed.
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- 2014
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27. A 10-W S-band class-B GaN amplifier with a dynamic gate bias circuit for linearity enhancement
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Denis Barataud, Guillaume Neveux, Jean-François Villemazet, Jean-Michel Nebus, Luc Lapierre, Tibault Reveyrand, Audrey Martin, Philippe Bouysse, Pierre Medrel, C2S2 (XLIM-C2S2), XLIM (XLIM), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), Centre National d'Études Spatiales [Toulouse] (CNES), Thales Alenia Space (TAS), and THALES
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Computer science ,business.industry ,Amplifier ,Electrical engineering ,Linearity ,Biasing ,Microwave measurements ,Trajectory optimization ,Power (physics) ,[SPI.TRON]Engineering Sciences [physics]/Electronics ,Electronic engineering ,Power amplifiers and linearizers ,S band ,Electrical and Electronic Engineering ,Envelope (mathematics) ,business ,Intermodulation - Abstract
International audience; In the present paper, we present a dynamic gate biasing technique applied to a 10 W, S-band GaN amplifier. The proposed methodology addresses class-B operation of power amplifiers that offers the potential for high efficiency but requires a careful attention to maintain good linearity performances at large output power back-off. This work proposes a solution to improve the linearity of class-B amplifiers driven by radio frequency-modulated signals having large peak to average power ratios. An important aspect of this work concerns the characterization of the dynamic behavior of GaN devices for gate bias trajectory optimization. For that purpose, the experimental study reported here is based on the use of a time-domain envelope setup. A specific gate bias circuit has been designed and connected to a 10 W - 2.5 GHz GaN amplifier demo board from CREE. Compared to conventional class-B operation with a fixed gate bias, a 10-dB improvement in terms of third-order intermodulation is reached. When applied to the amplification of 16-QAM signals the proposed technique demonstrates significant ACPR reduction of order of 6 dB along with error vector magnitude (EVM) improvements of five points over 8 dB output power back-off with a minor impact on power-added efficiency performances.
- Published
- 2013
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28. Electromagnetic Nonlinear Modeling of active phased antenna
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Raymond Quéré, T. Monediere, Tibault Reveyrand, Sébastien Mons, Marc Thevenot, Edouard Ngoya, G. Zakka El Nashef, François Torres, OSA (XLIM-OSA), XLIM (XLIM), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), and C2S2 (XLIM-C2S2)
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Engineering ,Directional antenna ,business.industry ,020208 electrical & electronic engineering ,Antenna measurement ,020206 networking & telecommunications ,02 engineering and technology ,Antenna factor ,Antenna efficiency ,law.invention ,law ,[INFO.INFO-IR]Computer Science [cs]/Information Retrieval [cs.IR] ,0202 electrical engineering, electronic engineering, information engineering ,Electronic engineering ,Active antenna ,Dipole antenna ,Antenna (radio) ,business ,Omnidirectional antenna - Abstract
International audience; This paper examines the distinctive feature of studying the direct interaction between high power amplifiers located at the vicinity of the radiating elements without the use of isolators. In that case, the coupling effect between antennas, which leads to output impedance mismatching and degradation of the radiation pattern, will be described. Alongside, two methods have been developed to address this major drawback with some experimental results to validate the theoretical approach. An active antenna prototype including power amplifiers has been manufactured to validate a first approach of active antenna joint simulation, taking into account all the mentioned effects.
- Published
- 2013
- Full Text
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29. Wideband harmonically matched packaged GaN HEMTs with high PAE performances at S-band frequencies
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Tibault Reveyrand, Michel Stanislawiak, Philippe Eudeline, Didier Floriot, Jerome Cheron, Michel Campovecchio, Denis Barataud, C2S2 (XLIM-C2S2), XLIM (XLIM), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), Thales Air Systems, Thales Group [France]-Thales Group [France], Thales Group [France], and UMS
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Materials science ,business.industry ,020208 electrical & electronic engineering ,Transistor ,Bandwidth (signal processing) ,020206 networking & telecommunications ,02 engineering and technology ,High-electron-mobility transistor ,law.invention ,[SPI.TRON]Engineering Sciences [physics]/Electronics ,law ,0202 electrical engineering, electronic engineering, information engineering ,Electronic engineering ,Harmonic ,Optoelectronics ,S band ,Electrical and Electronic Engineering ,Wideband ,business ,High electron ,Electrical impedance - Abstract
International audience; This paper presents a design method of internally-matched packaged GaN high electron mobility transistors (HEMTs) for achieving not only high-efficiency and high-power performances but also a wide bandwidth and insensitivity to harmonic terminations in the S-band. The package and its internal matching networks are synthesized to confine the second harmonic impedances seen by the GaN die to high-efficiency regions whatever the harmonic impedances presented outside the package. This paper reports the design of a packaged GaN HEMT achieving 78% of power-added-efficiency (PAE) and 25 W of output power at 2.5 GHz. A packaged GaN power bar is also reported with the addition of fundamental matching networks inside the package. In 50V environment, the packaged GaN power bar provided more than 56% of PAE from 2.5 to 3.1 GHz and was desensitized to harmonic load variations with less than two points of PAE variation when a load-pull is performed at second harmonic frequencies outside the package.
- Published
- 2013
- Full Text
- View/download PDF
30. Simulation and Measurement-based X-parameter Models for Power Amplifiers with Envelope Tracking
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Zoya Popovic, Tibault Reveyrand, David E. Root, Andrew Zai, Patrick Roblin, Haedong Jang, Department of Computer Science and Engineering [Colombus], Ohio State University [Columbus] (OSU), Electrical, Computer and Energy Engineering [Boulder] (ECEE), University of Colorado [Boulder], C2S2 (XLIM-C2S2), XLIM (XLIM), and Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)
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Engineering ,Envelope Tracking ,business.industry ,Amplifier ,020208 electrical & electronic engineering ,RF power amplifier ,020206 networking & telecommunications ,02 engineering and technology ,Signal ,Power (physics) ,Nonlinear system ,0202 electrical engineering, electronic engineering, information engineering ,Electronic engineering ,business ,Envelope (mathematics) ,ComputingMilieux_MISCELLANEOUS ,Voltage - Abstract
Static X-parameter (XP) models for RF power amplifiers (PAs), derived from both simulations and nonlinear vector network analyzer (NVNA) measurements, are investigated for the prediction of PA performance under dynamic signal conditions such as in envelope tracking (ET). The instantaneous AM-AM, AM-PM and PAE predictions of XP models extracted from simulation are compared under ET dynamic signal conditions to two types of circuit models using envelope simulation. An XP PA model is extracted for a peak 8W GaN class-F-1 ET PA from NVNA measurements with automated bias control. By applying a constant gain shaping table derived from the XP model to the drain supply voltage, the average PAE is improved from 40% to 57% for 3.84 MHz WCDMA signals at 2.14 GHz compared to fixed drain bias operation.
- Published
- 2013
31. Modeling of Trap Induced Dispersion of Large Signal Dynamic characteristics of GaN HEMTs
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Raymond Quéré, Tibault Reveyrand, Olivier Jardel, Stéphane Piotrowicz, Audrey Martin, P. Nakkala, Sylvain Delage, M. Campovecchio, Sylvain Laurent, Alcatel-Thalès III-V lab (III-V Lab), THALES-ALCATEL, C2S2 (XLIM-C2S2), XLIM (XLIM), and Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)
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010302 applied physics ,Materials science ,business.industry ,Wide-bandgap semiconductor ,Conductance ,020206 networking & telecommunications ,02 engineering and technology ,Trapping ,High-electron-mobility transistor ,01 natural sciences ,Signal ,[SPI.TRON]Engineering Sciences [physics]/Electronics ,Trap (computing) ,0103 physical sciences ,Dispersion (optics) ,Thermal ,0202 electrical engineering, electronic engineering, information engineering ,Optoelectronics ,business - Abstract
International audience; We propose here a non-linear GaN HEMT model for CAD including a trapping effects description consistent with both small-signal and large-signal operating modes. It takes into account the dynamics of the traps and then allows to accurately model the modulated large signal characteristics that are encountered in telecommunication and radar signals. This model is elaborated through low-frequency S-parameter measurements complementary to more classical pulsed-IV characterizations. A 8x75um AlInN/GaN HEMT model was designed and particularly validated in large-signal pulsed RF operation. It is also shown that thermal and trapping effects have opposite effects on the output conductance, thus opening the way for separate characterizations of the two effects
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- 2013
32. Time domain envelope characterisation of power amplifiers for linear and high efficiency design solutions
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Audrey Martin, Tibault Reveyrand, Ph Bouysse, J.M. Nebus, Jacques Sombrin, Pierre Medrel, C2S2 (XLIM-C2S2), XLIM (XLIM), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), Centre National d'Études Spatiales [Toulouse] (CNES), Télécommunications Spatiales et Aéronautiques - Telecommunications for Space ant Aeronautics (TéSA), and Laboratoire de recherche coopératif dans les télécommunications spatiales et aéronautiques (TESA)
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Noise power ,Engineering ,business.industry ,Amplifier ,020208 electrical & electronic engineering ,Linearity ,020206 networking & telecommunications ,02 engineering and technology ,7. Clean energy ,Power (physics) ,0202 electrical engineering, electronic engineering, information engineering ,Bit error rate ,Electronic engineering ,Figure of merit ,Time domain ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,business ,Envelope (mathematics) - Abstract
International audience; This paper focuses on the time domain envelope measurements based analysis of power amplifiers in order to improve both linearity and efficiency of microwave transmitters. First of all, a versatile time domain envelope test bench is presented. Then, two applications related to those RF PA measurements are reported. The first application concerns linearity characterization that can be specified in term of Noise Power Ratio (NPR) and Error Vector Magnitude (EVM). Those figures of merit are essential to compute the final bit error rate in a system level simulation tool. A relationship between NPR and EVM is presented and validated by measurements. As a result it can be advantageously used to simplify simulation and measurement procedures for the linearity characterisation of devices and subsystems. The second application is regarding enhancement of the trade-off between linearity and energy efficiency. In order to have a good efficiency, a 10 W class-B GaN Power amplifier is considered. The work presented here, proposes a solution for linearity specifications at large output power back-off thanks to a dynamic gate bias control related to low instantaneous envelope power level. Meanwhile, a dynamic drain bias control handles good efficiency at a constant gain for high instantaneous envelope power level. The measurement-based gate and drain bias trajectory extraction will be fully detailed and take into account GaN dispersive effects such as thermal and trapping effects.
- Published
- 2013
- Full Text
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33. Frequency Tunable Antenna Antenna Using a Magneto-Dielectric Material for DVB-H Application
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Laure Huitema, Thierry Monediere, Jean-Luc Mattei, Cyril Decroze, Eric Arnaud, Tibault Reveyrand, OSA (XLIM-OSA), XLIM (XLIM), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), and C2S2 (XLIM-C2S2)
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Materials science ,business.industry ,Frequency band ,020208 electrical & electronic engineering ,Electrical engineering ,020206 networking & telecommunications ,Ranging ,02 engineering and technology ,Antenna tuner ,Digital Video Broadcasting ,0202 electrical engineering, electronic engineering, information engineering ,Electrical and Electronic Engineering ,Antenna (radio) ,business ,Omnidirectional antenna ,Varicap ,Diode - Abstract
International audience; This paper presents an ultracompact antenna design suited for digital video broadcasting-handheld (DVB-H) reception devices. The DVB-H frequency band is ranging from 4 70 to 862 MHz and divided in 49 channels of 8 MHz. Designed to be integrated in a tablet, it is not only heavily miniaturized (λ0 /49 × λ0/71 ×λ0/160 at 470 MHz), but also able to cover each channel thanks to the use of a magneto-dielectric material. The advantage of using such a material is studied and described in this paper. Moreover, the operating frequency is continuously tuned over the whole DVB-H band by the integration of a varactor diode. This varactor diode has been characterized and modeled to properly cosimulate its behavior within the antenna. Limitations in terms of accepted power by the diode are emphasizing. Finally, the antenna design, including both magneto-dielectric material and varactor diode is integrated in the DVB-H receiver device. Measurement performances are presented and discussed.
- Published
- 2013
- Full Text
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34. Design of an Integrated Cascode Cell for Compact Ku-Band Power Amplifiers
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Christophe Chang, Marc Camiade, Francois Deborgies, Adeline Déchansiaud, Diane Bouw, Raphaël Sommet, Raymond Quéré, Tibault Reveyrand, C2S2 (XLIM-C2S2), XLIM (XLIM), and Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)
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Engineering ,business.industry ,Amplifier ,020208 electrical & electronic engineering ,Transistor ,RF power amplifier ,Electrical engineering ,020206 networking & telecommunications ,02 engineering and technology ,Integrated circuit design ,High-electron-mobility transistor ,Ku band ,law.invention ,law ,Hardware_GENERAL ,0202 electrical engineering, electronic engineering, information engineering ,Hardware_INTEGRATEDCIRCUITS ,Cascode ,business ,Monolithic microwave integrated circuit - Abstract
International audience; This paper reports on the design of a new power cell dedicated to Ku-band power amplifier (PA) applications. This cell called '"integrated cascode"' has been designed in order to propose a strong decrease in term of circuit size for Power Amplifier (PA). The technology used relies on 0.25-µm GaAs Pseudomorphic High Electron Mobility Transistors (PHEMT) of United Monolithic Semiconductors (UMS) foundry. A distributed approach is proposed in order to model this power cell. The challenge consists to obtain, with a better shape factor (ratio between the vertical and horizontal sizes of the transistor), the same performances than a single transistor with the same gate development. In order to design a 2W amplifier, we have used two 12×100 µm transistors. Cascode vertical size is 413 µm whereas a transistor with the same gate development exhibits a vertical size of 790 µm. Therefore the shape factor is nearly one as compared to a shape factor of 4 for a classical parallel architecture. This new device allows to decrease the MMIC amplifier area of 40 % compared with amplifier based on single transistors.
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- 2012
35. Design of a 55 W Packaged GaN HEMT with 60% PAE by Internal Matching in S-Band
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Didier Floriot, Michel Campovecchio, Philippe Eudeline, Jerome Cheron, Tibault Reveyrand, Sébastien Mons, Michel Stanislawiak, Denis Barataud, C2S2 (XLIM-C2S2), XLIM (XLIM), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), Thales Air Systems, Thales Group [France]-Thales Group [France], and Thales Group [France]
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Power gain ,Materials science ,GaN HEMTs ,business.industry ,Power amplifiers ,020208 electrical & electronic engineering ,Bandwidth (signal processing) ,packaged powerbars ,Impedance matching ,Electrical engineering ,wide bandwidth ,020206 networking & telecommunications ,Gallium nitride ,02 engineering and technology ,High-electron-mobility transistor ,chemistry.chemical_compound ,high efficiency ,chemistry ,harmonic control ,0202 electrical engineering, electronic engineering, information engineering ,Harmonic ,Optoelectronics ,S band ,business ,Electrical impedance - Abstract
International audience; This paper reports a package synthesis method in order to ensure good performances in PAE, output power and bandwidth. The internal matching circuits of the optimized package enable to reach the best impedance pre-matching at fundamental frequencies and also to confine the harmonic impedances seen by the internal GaN power bar into safe-efficiency regions whatever the external impedances presented to the package at second harmonic frequencies. In a 50Ω environment, the packaged GaN HEMT delivers 55 W output power associated with 60% PAE and 13.3 dB power gain at 2.7 GHz. By optimizing source and load impedances at the fundamental frequencies, the packaged GaN HEMT demonstrates more than 58% PAE from 2.6 GHz to 3.0 GHz.
- Published
- 2012
- Full Text
- View/download PDF
36. New Methodology for Mixed Simulation of Active Antenna
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Tibault Reveyrand, Sébastien Mons, F. Torres, Marc Thevenot, T. Monediere, Edouard Ngoya, G. Zakka El Nashef, Raymond Quéré, OSA (XLIM-OSA), XLIM (XLIM), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), and C2S2 (XLIM-C2S2)
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Engineering ,business.industry ,Amplifier ,020208 electrical & electronic engineering ,Isolator ,020206 networking & telecommunications ,02 engineering and technology ,Electronic circuit simulation ,Behavioral modeling ,Radiation pattern ,Power (physics) ,0202 electrical engineering, electronic engineering, information engineering ,Electronic engineering ,Object-relational impedance mismatch ,Active antenna ,business - Abstract
International audience; This paper presents a mixed simulation approach for an active antenna operating at 8.2 GHz. This approach is composed of three main parts which they will be detailed and described with some experimental validation as well. The first part of this approach is an electromagnetic (EM) macromodel for antennas array. The second part is a bilateral behavioral model for power amplifiers (PA). Finally, a mixed simulation approach was elaborated and implemented into a circuit simulator using both developed models. Theoretical and experimental results show the reliability of EM, PA models and the mixed simulation approach as well. The originality of this work is the elimination of isolator between PA and antennas while maintaining a correct radiation pattern despite high antenna impedance mismatches.
- Published
- 2012
- Full Text
- View/download PDF
37. A new method to measure pulsed RF time domain waveforms with a sub-sampling system
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Zoya Popovic, Tibault Reveyrand, C2S2 (XLIM-C2S2), XLIM (XLIM), and Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)
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Engineering ,business.industry ,020208 electrical & electronic engineering ,Fast Fourier transform ,Short-time Fourier transform ,020206 networking & telecommunications ,02 engineering and technology ,Network analyzer (electrical) ,Signal ,Sub-sampling ,symbols.namesake ,Fourier transform ,0202 electrical engineering, electronic engineering, information engineering ,symbols ,Electronic engineering ,Time domain ,Radio frequency ,business - Abstract
This paper describes a new method that enables time domain pulsed RF measurements with any sub-sampling system. The method consists of replacing the FFT with a rectangular windowed short-time Fourier transform (STFT). The algorithm automatically extracts Fourier co-efficients within the pulses and the system does not need any trigger signal or clocking circuit. This minimal software modification enhances the standard Large Signal Network Analyzer (LSNA), enabling pulsed measurements without any hardware modifications. Our algorithm has been tested with a wideband amplifier at 1.5 GHz.
- Published
- 2012
38. Time-Domain Interleaved High Sampling Rate System for Large Signal Characterization of Non-Linear Devices
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Guillaume Neveux, Tibault Reveyrand, J.M. Nebus, Sajjad Ahmed, Denis Barataud, C2S2 (XLIM-C2S2), XLIM (XLIM), and Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)
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Engineering ,business.industry ,Amplifier ,020208 electrical & electronic engineering ,020206 networking & telecommunications ,02 engineering and technology ,Signal ,Time–frequency analysis ,Intermediate frequency ,Sampling (signal processing) ,Aliasing ,0202 electrical engineering, electronic engineering, information engineering ,Electronic engineering ,Waveform ,Time domain ,business - Abstract
This paper proposes a high sampling rate, 4-channel Track and Hold Amplifier based time-domain measurement setup. It achieves an equivalent high sampling rate using Coherent Time Interleaved Sampling (CTIS) technique to accurately characterize high Power amplifiers driven by repetitive pulsed RF large signal. The acquired samples are the combination of non-sequential sub-sampling technique and the measurement system based on the use of Track and Hold amplifiers to avoid Intermediate Frequency (IF) aliasing and IF filtering. This principle is applied to the large signal pulsed characterization of S-band 50 W GaN amplifier. Fully calibrated acquired time-domain waveforms and power characteristics under varying load conditions are presented. To the authors knowledge the transients at the beginning and end of pulses are measured and exhibited for the first time.
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- 2012
39. Mixed simulation approach for direct connection between power amplifiers and antenna arrays without the use of isolators
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Raymond Quéré, Thierry Monediere, François Torres, G. Zakka El Nashef, Edouard Ngoya, Sébastien Mons, Tibault Reveyrand, Marc Thevenot, OSA (XLIM-OSA), XLIM (XLIM), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), and C2S2 (XLIM-C2S2)
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Engineering ,Reconfigurable antenna ,business.industry ,Antenna measurement ,Electrical engineering ,020206 networking & telecommunications ,02 engineering and technology ,Antenna factor ,Antenna tuner ,01 natural sciences ,010305 fluids & plasmas ,Radiation pattern ,law.invention ,law ,0103 physical sciences ,0202 electrical engineering, electronic engineering, information engineering ,Electronic engineering ,Dipole antenna ,Active antenna ,Antenna (radio) ,business - Abstract
International audience; This paper describes a mixed simulation approach of electromagnetic (EM) macromodel and nonlinear circuit bilateral model to correct the output signal for a power amplifier (PA) and obtain an optimal radiation pattern for an active antenna array transmit (TX) chain. Various experimental results show the reliability of EM, nonlinear PA models and mixed simulation approach as well. The originality of this work is the elimination of isolators between PAs and antennas while maintaining a matched PA and a correct radiation pattern in regards to the antenna's high impedance mismatch.
- Published
- 2012
- Full Text
- View/download PDF
40. New Sampling Paradigm Dedicated to RF ultra-wideband Receivers
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TIBAULT REVEYRAND, C2S2 (XLIM-C2S2), XLIM (XLIM), and Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)
- Subjects
ComputingMilieux_MISCELLANEOUS - Abstract
International audience
- Published
- 2012
41. First demonstration of AlInN/GaN HEMTs amplifiers at K band
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Stéphane Piotrowicz, S. Leger, G. Callet, Raphaël Aubry, D. Lancereau, Erwan Morvan, M. Oualli, Eric Chartier, N. Sarazin, Christian Dua, Tibault Reveyrand, Olivier Jardel, Sylvain Delage, J.C. Jacquet, and M.-A. di Forte Poisson
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Materials science ,business.industry ,Amplifier ,Gate length ,Gallium nitride ,Hybrid amplifier ,Power (physics) ,Aluminum gallium nitride ,chemistry.chemical_compound ,chemistry ,K band ,Optoelectronics ,High current ,business - Abstract
AlInN/GaN HEMTs have shown outstanding power performances for high frequency applications, due in particular to their high current densities and their thinner barrier layers than in AlGaN/GaN HEMTs that minimize short channel effects. In this paper, we present the first published power results of two K-band hybrid amplifier demonstrators at 20GHz and 26.5GHz using 0.25µm gate length devices. At these frequencies, respectively, cw RF output power of 4.5 Watts with 20% PAE and 1.65 W with 15.5 % of PAE were obtained. These state-of-the-art results confirm the potential of AlInN/GaN technology for high frequency applications.
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- 2012
- Full Text
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42. Low Frequency Parasitic Effects in RF Transistors and their Impact on Power Amplifier Performances
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Tibault Reveyrand, Jean Michel Nebus, Raymond Quéré, Philippe Bouysse, Raphaël Sommet, Denis Barataud, Jean-Pierre Teyssier, C2S2 (XLIM-C2S2), XLIM (XLIM), and Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)
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010302 applied physics ,Materials science ,business.industry ,Amplifier ,Thermal resistance ,Transistor ,Bipolar junction transistor ,020206 networking & telecommunications ,Heterojunction ,02 engineering and technology ,Low frequency ,01 natural sciences ,Signal ,law.invention ,law ,0103 physical sciences ,0202 electrical engineering, electronic engineering, information engineering ,Optoelectronics ,business ,Intermodulation - Abstract
International audience; In this paper Low Frequency (LF) parasitic effects are assessed through three kinds of measurements. It is shown that LF S-parameters measurements allow to extract the thermal impedance of Heterojunction Bipolar Transistors (HBTs) and to put dispersive effects of AlGaN/GaN High Electron Mobility Transistors (HEMTs) into evidence. Large signal (RF pulsed and two tone intermodulation) confirm the impact of those parasitic effects on performances of Power Amplifiers.
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- 2012
- Full Text
- View/download PDF
43. 4-Channel, time-domain measurement system using track and hold amplifier for the characterization and linearization of high-power amplifiers
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Guillaume Neveux, Tibault Reveyrand, Jean-Michel Nebus, Denis Barataud, Sajjad Ahmed, Mohammad Saad El Dine, C2S2 (XLIM-C2S2), XLIM (XLIM), and Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)
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Engineering ,Test bench ,business.industry ,Dynamic range ,Amplifier ,020208 electrical & electronic engineering ,Bandwidth (signal processing) ,Electrical engineering ,Linearity ,020206 networking & telecommunications ,02 engineering and technology ,0202 electrical engineering, electronic engineering, information engineering ,Electronic engineering ,Time domain ,Radio frequency ,Electrical and Electronic Engineering ,Wideband ,business - Abstract
International audience; We propose in this paper a 4-channel time-domain test bench for the characterization and linearity enhancement of microwave power amplifiers (PAs). The proposed time-domain measurement system utilizes four track and hold amplifiers (THAs) for direct subsampling of radiofrequency (RF) signals. The use of wideband THAs to replace samplers or mixers enables reducing analog IF circuit complexity. It permits direct digitization of RF signals like CW, two-tone and pulsed modulated signals, bringing more flexibility in the receiver's performance by enhancing the dynamic range and bandwidth. This test bench is capable of completely extracting the phase, amplitude, and transfer characteristics of non-linear devices excited with CW or modulated RF signals. In this work, two-tone transfer characteristics of a 50 W GaN HEMT Nitronex PA were extracted and processed for applying digital pre-distortion linearization to enhance linearity performance. Time-domain envelope and carrier waveforms (voltage and current) along with third-order inter-modulation distortion (IMD) products with and without digital pre-distortion scheme are also presented.
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- 2012
- Full Text
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44. Wideband 50W Packaged GaN HEMT With Over 60% PAE Through Internal Harmonic Control in S-Band
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Tibault Reveyrand, Jerome Cheron, Philippe Eudeline, Michel Stanislawiak, Didier Floriot, Denis Barataud, Michel Campovecchio, Maury, Véronique, C2S2 (XLIM-C2S2), XLIM (XLIM), and Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)
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Materials science ,business.industry ,020208 electrical & electronic engineering ,Bandwidth (signal processing) ,Electrical engineering ,020206 networking & telecommunications ,Gallium nitride ,02 engineering and technology ,High-electron-mobility transistor ,Harmonic analysis ,chemistry.chemical_compound ,chemistry ,0202 electrical engineering, electronic engineering, information engineering ,Optoelectronics ,S band ,Wideband ,business ,Electrical impedance ,Electronic circuit - Abstract
This paper presents an internally-matched packaged GaN HEMT for achieving not only high-efficiency and high-power performances but also wide bandwidth and insensitivity to harmonic terminations in S-band. The internal matching circuits of the optimized package enable to reach a wider bandwidth and to confine the harmonic impedances seen by the internal GaN powerbar into high-efficiency regions whatever the external impedances presented to the package. In a 50Ω environment, the packaged GaN HEMT delivers 45 W output power with more than 55% PAE from 2.9 to 3.7 GHz (24% relative bandwidth). By optimizing source and load impedances at the 1st-harmonic, the packaged GaN HEMT demonstrates 50 W output power with more than 60% PAE over 21% bandwidth.
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- 2012
45. An accurate modeling technique for antennas and nonlinear RF power amplifiers mixed simulation
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Tibault Reveyrand, François Torres, Georges Zakka El Nashef, Marc Thevenot, Sébastien Mons, Raymond Quéré, Thierry Monediere, Edouard Ngoya, OSA, XLIM (XLIM), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), and C2S2
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Engineering ,business.industry ,Amplifier ,020208 electrical & electronic engineering ,RF power amplifier ,020206 networking & telecommunications ,02 engineering and technology ,Input impedance ,Radiation pattern ,0202 electrical engineering, electronic engineering, information engineering ,Electronic engineering ,Active antenna ,Standing wave ratio ,Electrical and Electronic Engineering ,Antenna (radio) ,business ,Electrical impedance - Abstract
The design of agile active antennas requires an efficient modeling methodology in order to quantify the impact of other components on the array radiation pattern, and especially the influence of power amplifiers (PA). Therefore, the performance prediction of PA on TX chains is of prime importance. This article describes two different approaches for active antenna applications. The first one concentrates on PA macro-modeling, which takes into account a large output load impedance mismatch with a voltage standing wave ratio up to 4:1. A PA behavioral model based on nonlinear scattering functions was developed and extracted from CW measurements. The model validity was checked by comparison with the measured data. The second one describes a novel technique for synthesizing a given radiation pattern, whereas taking into account the mutual coupling and calculated matching impedances (ZL ≠ 50 Ω) of each antenna in the array according to frequency and pointing angle.
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- 2011
- Full Text
- View/download PDF
46. Time-domain measurement system using Track & Hold Amplifier applied to pulsed RF characterization of high power GaN devices
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Denis Barataud, Guillaume Neveux, Sajjad Ahmed, M. Saad-el-dine, J.M. Nebus, Tibault Reveyrand, C2S2, XLIM (XLIM), and Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)
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Test bench ,Engineering ,business.industry ,Amplifier ,020208 electrical & electronic engineering ,RF power amplifier ,Electrical engineering ,Power bandwidth ,020206 networking & telecommunications ,02 engineering and technology ,0202 electrical engineering, electronic engineering, information engineering ,Linear amplifier ,Optoelectronics ,Radio frequency ,Wideband ,Direct-coupled amplifier ,business - Abstract
We propose in this paper a time-domain test bench for the pulsed characterization of a high Power GaN Amplifier. Our findings are based on a Track and Hold Amplifier for the down-conversion of RF spectra using the sub harmonic sampling principle. The use of wideband THA to replace samplers or mixers enables reducing component density in an analog domain. It permits direct digitization of entire pulsed RF spectrum, bringing more flexibility in the receiver's performance by enhancing the dynamics and bandwidth. This test bench is capable of completely extracting the phase, amplitude and pulse profile of the RF signal. Power characteristics, phase and amplitude information for multiple bursts of pulses of a 50 W GaN HEMT Nitronex (NPTB00050B) power amplifier have been measured using the proposed calibrated measurement system. The low frequency memory effects (thermal and trapping) of high power GaN amplifier were also measured.
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- 2011
- Full Text
- View/download PDF
47. EM/Circuit Mixed Simulation Technique for an Active Antenna
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Georges Zakka El Nashef, Raymond Quéré, Thierry Monediere, Sébastien Mons, Tibault Reveyrand, Edouard Ngoya, François Torres, OSA, XLIM (XLIM), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), and C2S2
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Engineering ,business.industry ,Amplifier ,020208 electrical & electronic engineering ,Circulator ,Active electronically scanned array ,Isolator ,Electrical engineering ,020206 networking & telecommunications ,02 engineering and technology ,Power (physics) ,Transmission (telecommunications) ,0202 electrical engineering, electronic engineering, information engineering ,Electronic engineering ,Active antenna ,Radio frequency ,Electrical and Electronic Engineering ,business - Abstract
International audience; Today's increase of functions, improvement of performance, and cost reductions required on an active electronically scanned array (AESA), associated to the limited amount of available areas and volumes to implement the equipment, drive an approach leading to directly connect power amplifiers (PAs) to the antennas array without placing an isolator/circulator between them. In this letter, an electromagnetic/radio frequency (EM/RF) circuit mixed simulation technique will be theoretically introduced and experimentally demonstrated on transmission (Tx) chains to deal with the proposed challenge.
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- 2011
- Full Text
- View/download PDF
48. New compact power cells for Ku band applications
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Francois Deborgies, Adeline Déchansiaud, Tibault Reveyrand, Diane Bouw, Raymond Quéré, Raphaël Sommet, C. Chang, Marc Camiade, C2S2, XLIM (XLIM), and Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)
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Transistor model ,Engineering ,business.industry ,Amplifier ,020208 electrical & electronic engineering ,Transistor ,Electrical engineering ,020206 networking & telecommunications ,02 engineering and technology ,High-electron-mobility transistor ,7. Clean energy ,Ku band ,law.invention ,law ,Logic gate ,0202 electrical engineering, electronic engineering, information engineering ,Hardware_INTEGRATEDCIRCUITS ,Cascode ,business ,Monolithic microwave integrated circuit - Abstract
International audience; This paper reports on the design of new power cells based on GaAs PHEMT transistors with 0.25μm gate length in MMIC technology. The design starts from a fishbone power cell initially designed by United Monolithic Semiconductors (UMS). This one allows us to validate the elementary transistor model. This model is used for other power cells design as cascode cell.
- Published
- 2011
- Full Text
- View/download PDF
49. Design and Modeling Method of Package for Power GaN HEMTs to Limit the Input Matching Sensitivity
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M. Campovecchio, Jerome Cheron, Denis Barataud, Didier Floriot, Michel Stanislawiak, Sébastien Mons, Philippe Eudeline, Wilfried Demenitroux, Tibault Reveyrand, C2S2, XLIM (XLIM), and Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)
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Computer science ,business.industry ,020208 electrical & electronic engineering ,Transistor ,Electrical engineering ,020206 networking & telecommunications ,02 engineering and technology ,Input impedance ,law.invention ,Power (physics) ,law ,Dispersion (optics) ,Limit (music) ,0202 electrical engineering, electronic engineering, information engineering ,Return loss ,Electronic engineering ,Hardware_INTEGRATEDCIRCUITS ,business ,Electrical impedance ,Sensitivity (electronics) - Abstract
International audience; This paper proposes a packaged transistor modeling using lumped elements. This model allows studying the input impedance dispersion when a range of variation is applied to various package components. This dispersion is also highlighted when a load impedance variation is applied to the package transistor. It is demonstrated that this dispersion can be corrected using a specific input pre-matching and by having a very good information about input return loss contours. Moreover, this specific packaged transistor presents input impedance close to 50Ω over [3.0-3.8]GHz.
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- 2011
- Full Text
- View/download PDF
50. Electrical Performances of AlInN/GaN HEMTs. A Comparison with AlGaN/GaN HEMTs with similar technological process
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Stéphane Piotrowicz, N. Sarazin, Jean-Claude Jacquet, Erwan Morvan, Raphaël Aubry, M. Oualli, Olivier Jardel, Jérémy Dufraisse, Tibault Reveyrand, Eric Chartier, Marie-Antoinette Poisson, M. Piazza, G. Callet, Sylvain Delage, C2S2, XLIM (XLIM), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thalès, and Marcoussis (91)
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010302 applied physics ,Power-added efficiency ,Materials science ,business.industry ,Transistor ,X band ,Algan gan ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Epitaxy ,01 natural sciences ,7. Clean energy ,law.invention ,law ,0103 physical sciences ,Optoelectronics ,Continuous wave ,Wafer ,Power semiconductor device ,Electrical and Electronic Engineering ,0210 nano-technology ,business - Abstract
International audience; A study of the electrical performances of AlInN/GaN High Electron Mobility Transistors (HEMTs) on SiC substrates is presented in this paper. Four different wafers with different technological and epitaxial processes were characterized. Thanks to intensive characterizations as pulsed-IV, [S]-parameters, and load-pull measurements from S to Ku bands, it is demonstrated here that AlInN/GaN HEMTs show excellent power performances and constitute a particularly interesting alternative to AlGaN/GaN HEMTs, especially for high-frequency applications beyond the X band. The measured transistors with 250 nm gate lengths from different wafers delivered in continuous wave (cw): 10.8 W/mm with 60% associated power added efficiency (PAE) at 3,5 GHz, 6.6 W/mm with 39% associated PAE at 10.24 GHz, and 4.2 W/mm with 43% associated PAE at 18 GHz.
- Published
- 2011
- Full Text
- View/download PDF
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