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39 results on '"Tomida, Kazuyuki"'

8. Impact of fin shape variability on device performance towards 10nm node

Author

Geert Hellings, Abdelkarim Mercha, Min-Soo Kim, Tomida Kazuyuki, Diederik Verkest, Aaron Thean, Thomas Chiarella, Morin Dehan, Anda Mocuta, Kenichi Miyaguhi, Doyoung Jang, Naoto Horiguchi, and Keizo Hiraga

Subjects
Physics, Planar, Fin, Logic gate, Node (physics), Electronic engineering, Equivalent oxide thickness, Short-channel effect, Point (geometry), Geometry, Communication channel
Abstract

A transition from planar to FinFET brings additional variability sources from 3D channel structure. In this study, the impact of fin shape variability on device performance, especially from the view point of short channel effect control, is investigated with using Si-validated TCAD. This reveals that the width, height and taper angle of fin have significant impact on the electrostatics of the device. In addition, through the statistical Monte-Carlo simulations with compact model, the impact of fin shape variability is visualized in comparison with conventional device variability sources, i.e., gate length, work function, and equivalent oxide thickness. As a result, fin width and fin angle are found to be major variability source in addition to gate length. This indicates that the suppression of the process variability in fin width and fin angle is key to control device variability, especially in advanced node.

Published
2015

9. Impact of fin shape variability on device performance towards 10nm node

Author

Tomida, Kazuyuki, primary, Hiraga, Keizo, additional, Dehan, Morin, additional, Hellings, Geert, additional, Jang, Doyoung, additional, Miyaguhi, Kenichi, additional, Chiarella, Thomas, additional, Kim, Minsoo, additional, Mocuta, Anda, additional, Horiguchi, Naoto, additional, Mercha, Abdelkarim, additional, Verkest, Diederik, additional, and Thean, Aaron, additional

Published
2015
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10. Understanding the Interface Reactions of Rutile TiO2Grown by Atomic Layer Deposition on Oxidized Ruthenium

Author

Popovici, Mihaela, primary, Delabie, Annelies, additional, Adelmann, Christoph, additional, Meersschaut, Johan, additional, Franquet, Alexis, additional, Tallarida, Massimo, additional, van den Berg, Jaap, additional, Richard, Olivier, additional, Swerts, Johan, additional, Tomida, Kazuyuki, additional, Kim, Min-Soo, additional, Tielens, Hilde, additional, Bender, Hugo, additional, Conard, Thierry, additional, Jurczak, Malgorzata, additional, Van Elshocht, Sven, additional, and Schmeisser, Dieter, additional

Published
2012
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13. A comparative study of the microstructure-dielectric properties of crystalline SrTiO3 ALD films obtained via seed layer approach

Author

Popovici, Mihaela, primary, Tomida, Kazuyuki, additional, Swerts, Johan, additional, Favia, Paola, additional, Delabie, Annelies, additional, Bender, Hugo, additional, Adelmann, Christoph, additional, Tielens, Hilde, additional, Brijs, Bert, additional, Kaczer, Ben, additional, Pawlak, Malgorzata A., additional, Kim, Min-Soo, additional, Altimime, Laith, additional, Van Elshocht, Sven, additional, and Kittl, Jorge A., additional

Published
2011
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14. Impact of thermal treatment upon morphology and crystallinity of strontium titanate films deposited by atomic layer deposition

Author

Popovici, Mihaela, primary, Van Elshocht, Sven, additional, Menou, Nicolas, additional, Favia, Paola, additional, Bender, Hugo, additional, Rosseel, Erik, additional, Swerts, Johan, additional, Adelmann, Christoph, additional, Vrancken, Christa, additional, Moussa, Alain, additional, Tielens, Hilde, additional, Tomida, Kazuyuki, additional, Pawlak, Malgorzata, additional, Kaczer, Ben, additional, Schoofs, Geert, additional, Vandervorst, Wilfried, additional, Wouters, Dirk J., additional, and Kittl, Jorge A., additional

Published
2011
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15. Controlled growth of rutile TiO2 by atomic layer deposition on oxidized ruthenium

Author

Popovici, Mihaela, primary, Swerts, Johan, additional, Tomida, Kazuyuki, additional, Radisic, Dunja, additional, Kim, Min-Soo, additional, Kaczer, Ben, additional, Richard, Olivier, additional, Bender, Hugo, additional, Delabie, Annelies, additional, Moussa, Alain, additional, Vrancken, Christa, additional, Opsomer, Karl, additional, Franquet, Alexis, additional, Pawlak, Malgorzata A., additional, Schaekers, Marc, additional, Altimime, Laith, additional, Van Elshocht, Sven, additional, and Kittl, Jorge A., additional

Published
2010
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17. Growth and Material Characterization of Hafnium Titanates Deposited by Atomic Layer Deposition

Author

Popovici, Mihaela, primary, Delabie, Annelies, additional, Van Elshocht, Sven, additional, Clima, Sergiu, additional, Pourtois, Geoffrey, additional, Nyns, Laura, additional, Tomida, Kazuyuki, additional, Menou, Nicolas, additional, Opsomer, Karl, additional, Swerts, Johan, additional, Detavernier, Christophe, additional, Wouters, Dirk, additional, and Kittl, Jorge Adrian, additional

Published
2009
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31. Hypercholesterolemia induces leukocyte entrapment in the retinal microcirculation of rats.

Author

Tomida, Kazuyuki, Tamai, Kazushi, Matsuda, Yoshito, Matsubara, Akihisa, and Ogura, Yuichiro

Subjects
*RETINAL (Visual pigment), *MICROCIRCULATION, *HYPERCHOLESTEREMIA, *ARTERIOSCLEROSIS risk factors, *STRUCTURE-activity relationships, *PHYSIOLOGY
Abstract

Purpose. To evaluate leukocyte dynamics in the retinal microcirculation of hypercholesterolemic rats in vivo using acridine orange digital fluorography. Methods. 18 male pigmented rats were divided into 3 groups according to their diet; (A) control diet (0.1% cholesterol) for 8 weeks, (B) control diet for an initial 4 weeks followed by a high-cholesterol (HC) diet (5% cholesterol) for another 4 weeks and (C) HC diet for 8 weeks. Leukocyte dynamics were observed with acridine orange digital fluorography. The diameter of major retinal vessels and the number of leukocytes trapped in the retina were evaluated quantitatively. Results. Both groups B and C showed approximately 4-fold higher serum cholesterol levels than in group A. The diameters of retinal arteries and veins were not significantly different among the three groups. Also, no rolling leukocytes were observed in any of the groups. In the retinal microcirculation at 30 minutes after acridine orange injection, the density of trapped leukocytes in both groups B and C was significantly greater than in group A (23.19 ± 2.13, 28.56 ± 1.96 and 13.67 ± 1.45 cells/mm2, respectively, p < 0.01). Furthermore, group C exhibited a significantly greater number of trapped leukocytes than in group B (p < 0.01). Conclusion. Enhanced leukocyte entrapment in the retinal microcirculation was induced in the early stage of hypercholesterolemia. Entrapment was increased as the period of hypercholesterolemia was prolonged. Leukocyte accumulation in the retina may be an early vascular dysfunction leading to arteriosclerosis in hypercholesterolemia. [ABSTRACT FROM AUTHOR]

Published
2001
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32. Understanding the Interface Reactions of Rutile TiO2 Grown by Atomic Layer Deposition on Oxidized Ruthenium

Author

Popovici, Mihaela, Delabie, Annelies, Adelmann, Christoph, Meersschaut, Johan, Franquet, Alexis, Tallarida, Massimo, van, Jaap, Berg, den, Richard, Olivier, Swerts, Johan, Tomida, Kazuyuki, Kim, Soo, Tielens, Hilde, Bender, Hugo, Conard, Thierry, Jurczak, Malgorzata, Van, Sven, and, Elshocht, and Schmeisser, Dieter

Abstract

The atomic layer deposition of titanium oxide TiO2 on ruthenium and oxidized ruthenium with titanium methoxide as metal precursor and H2O and O3 as oxidant was investigated by Rutherford backscattering (RBS) and time of flight secondary ion mass spectrometry (TOFSIMS). An ultra-thin layer of TiO2 deposited a priori with H2O plays the role of protection of Ru(Ox) substrates against etching by O3. Information about thin films ([?]3 nm) interfacial reactions, thickness and structure was brought by Medium Energy Ion Scattering Spectroscopy (MEIS) and X-ray absorption spectroscopy (XAS) measurements. The growth enhancements observed in the first stages of the deposition depends on the pre-treatment (pre-oxidation, H2O based interlayer thickness) of the Ru substrate. Thick films ([?]14 nm) were analyzed by transmission electron microscopy (TEM) and X-ray diffraction (XRD). The as deposited TiO2 films are crystalline with rutile structure, as resulted from structural analyzes. However, the presence of small amounts of anatase was detected by soft X-ray absorption spectroscopy (XAS) and is strongly influenced by the surface pre-treatment of the Ru substrate. The electrical properties (equivalent oxide thickness and leakage current density) correlate with a different rutile/anatase ratio present in the films.

Published
2013

33. A comparative study of the microstructure–dielectric properties of crystalline SrTiO3ALD films obtained via seed layer approach

Author

Popovici, Mihaela, Tomida, Kazuyuki, Swerts, Johan, Favia, Paola, Delabie, Annelies, Bender, Hugo, Adelmann, Christoph, Tielens, Hilde, Brijs, Bert, Kaczer, Ben, Pawlak, Malgorzata A., Kim, Min‐Soo, Altimime, Laith, Van Elshocht, Sven, and Kittl, Jorge A.

Abstract

SrTiO3(STO) films were grown by atomic layer deposition (ALD) on TiN using Sr(t‐Bu3Cp)2, Ti(OCH3)4and H2O. After crystallization anneal, large single crystals grains were obtained and nanocracks were present. The microstructure can be changed using a thin STO crystalline seed spike annealed at 700 °C, which induces formation of much smaller grains in the top layer after post‐deposition anneal. The seed approach was also applied for a layer that was directly deposited in crystalline state at 370 °C, with a Ti(Me5Cp)(OMe)3precursor thermally stable at this temperature of deposition. The nanocracks were reduced or totally eliminated when using the seed layer template approach. Nevertheless, the leakage current is only reduced for the case when the Ti(OCH3)4precursor was used.

Published
2011
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34. Controlled growth of rutile TiO.

Author

Popovici, Mihaela, Swerts, Johan, Tomida, Kazuyuki, Radisic, Dunja, Kim, Min-Soo, Kaczer, Ben, Richard, Olivier, Bender, Hugo, Delabie, Annelies, Moussa, Alain, Vrancken, Christa, Opsomer, Karl, Franquet, Alexis, Pawlak, Malgorzata A., Schaekers, Marc, Altimime, Laith, Van Elshocht, Sven, and Kittl, Jorge A.

Published
2011
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35. Dielectric constant enhancement due to Si incorporation into HfO2.

Author

Tomida, Kazuyuki, Kita, Koji, and Toriumi, Akira

Subjects
*DIELECTRIC devices, *DIELECTRICS, *POLARIZABILITY (Electricity), *POLARIZATION (Electricity), *ELECTROMAGNETIC fields, *OPTICAL communications
Abstract

The authors investigated the dielectric constant change of Hf(1-x)SixO2 film as functions of Si concentration and annealing temperature. As a result, the dielectric constant of Hf(1-x)SixO2 was increased when doped with a small amount of Si after 800 °C annealing. The authors revealed that the dielectric constant enhancement of Hf(1-x)SixO2 films is related to the phase transformation from the monoclinic to the tetragonal phase of HfO2. By using the Clausius-Mossotti relation, it is concluded that the dielectric constant enhancement through the structural phase transformation is derived from the molar volume shrinkage rather than the molar polarizability increase. [ABSTRACT FROM AUTHOR]

Published
2006
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36. Dielectric constant enhancement due to Si incorporation into HfO2.

Author

Tomida, Kazuyuki, Kita, Koji, and Toriumi, Akira

Subjects
DIELECTRIC devices, DIELECTRICS, POLARIZABILITY (Electricity), POLARIZATION (Electricity), ELECTROMAGNETIC fields, OPTICAL communications
Abstract

The authors investigated the dielectric constant change of Hf(1-x)SixO2 film as functions of Si concentration and annealing temperature. As a result, the dielectric constant of Hf(1-x)SixO2 was increased when doped with a small amount of Si after 800 °C annealing. The authors revealed that the dielectric constant enhancement of Hf(1-x)SixO2 films is related to the phase transformation from the monoclinic to the tetragonal phase of HfO2. By using the Clausius-Mossotti relation, it is concluded that the dielectric constant enhancement through the structural phase transformation is derived from the molar volume shrinkage rather than the molar polarizability increase. [ABSTRACT FROM AUTHOR]

Published
2006
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37. Higher-$k$ Scalability and Leakage Current Reduction of SiO2-Doped HfO2in Direct Tunneling Regime

Author

Tomida, Kazuyuki, Kita, Koji, and Toriumi, Akira

Abstract

The dielectric constant scalability and leakage current reduction of ultrathin SiO2-doped HfO2(SDH) films are demonstrated. A good linearity of capacitance--physical thickness relationship in metal--insulator--metal capacitors indicates that the high dielectric constant (${\sim}27$) of the SDH film is maintained down to 2 nm in the physical thickness. Hence, the capacitance equivalent thickness (CET) is effectively reduced with the higher-$k$ SDH film and a significant leakage current reduction at a given CET is observed in SDH films. In this thickness region, the leakage current density is determined by the physical thickness and is independent of measurement temperature. Those facts indicate the direct tunneling mechanism should dominate the leakage current. In addition, the tunneling effective mass is evaluated to be about 0.2 $m_{0}$ ($m_{0}$: electron rest mass) by fitting the physical thickness dependence of leakage current to the theoretical calculation.

Published
2011
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39. Understanding the Interface Reactions of Rutile TiO2Grown by Atomic Layer Deposition on Oxidized Ruthenium

Author

Popovici, Mihaela, Delabie, Annelies, Adelmann, Christoph, Meersschaut, Johan, Franquet, Alexis, Tallarida, Massimo, van den Berg, Jaap, Richard, Olivier, Swerts, Johan, Tomida, Kazuyuki, Kim, Min-Soo, Tielens, Hilde, Bender, Hugo, Conard, Thierry, Jurczak, Malgorzata, Van Elshocht, Sven, and Schmeisser, Dieter

Abstract

The atomic layer deposition of titanium oxide TiO2on ruthenium and oxidized ruthenium with titanium methoxide as metal precursor and H2O and O3as oxidant was investigated by Rutherford backscattering (RBS) and time of flight secondary ion mass spectrometry (TOFSIMS). An ultra-thin layer of TiO2deposited a priori with H2O plays the role of protection of Ru(Ox) substrates against etching by O3. Information about thin films (∼3 nm) interfacial reactions, thickness and structure was brought by Medium Energy Ion Scattering Spectroscopy (MEIS) and X-ray absorption spectroscopy (XAS) measurements. The growth enhancements observed in the first stages of the deposition depends on the pre-treatment (pre-oxidation, H2O based interlayer thickness) of the Ru substrate. Thick films (∼14 nm) were analyzed by transmission electron microscopy (TEM) and X-ray diffraction (XRD). The as deposited TiO2films are crystalline with rutile structure, as resulted from structural analyzes. However, the presence of small amounts of anatase was detected by soft X-ray absorption spectroscopy (XAS) and is strongly influenced by the surface pre-treatment of the Ru substrate. The electrical properties (equivalent oxide thickness and leakage current density) correlate with a different rutile/anatase ratio present in the films.

Published
2013
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