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17 results on '"Traetta, G."'

2. Well-width dependence of the ground level emission of GaN/AlGan quantum wells

Author

Bonfiglio, A., Lomascolo, M., Traetta, G., Cingolani, R., di Carlo, A., Della Sala, F., Lugli, P., Botchkarev, A., and Morkoc, H.

Subjects
Condensed matter -- Research, Optoelectronics -- Research, Quantum wells -- Research, Physics
Abstract

A new study investigates GaN/AlGaN quantum wells characterized by different structural and strain distribution parameters.

Published
2000

6. Origin of persistent photocurrent in GaN/AlGaN multiquantum wells

Author

Bonfiglio, A., Traetta, G., Lomascolo, M., Passaseo, A., and Cingolani, R.

Subjects
Photoconductivity -- Research, Physics -- Research, Quantum wells -- Research, Physics
Abstract

Research describing the photopersistance and phototransport properties of GaN/AlGaN multiple quantum wells is presented. In particular observations of yellow luminescence, indicating the existence of defects, are examined.

Published
2001

9. Mesoscopic-capacitor effect in GaN/AlxGa1-xN quantum wells: Effects on the electronic states

Author

Di Carlo, A, Reale, A, Lugli, P, Traetta, G, Lomascolo, M, Passaseo, A, Cingolani, R, Bonfiglio, A, Berti, M, Napolitani, E, Natali, M, Sinha, SK, Drigo, AV, Vinattieri, A, and Colocci, M

Subjects
Condensed Matter::Quantum Gases, Condensed Matter::Other, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Abstract

We show that wide GaN quantum wells behave Like mesoscopic capacitors. The electron-hole pairs are separated by the spontaneous and piezoelectric polarization fields and accumulated in the well, resulting in a well-width dependent screening of the built-in field. The extent to which such screening is effective depends on the interplay between radiative and nonradiative recombination probabilities, which deplete the ground level of the quantum well, causing the recovery of the unscreened built-in field. The account of the mesoscopic capacitor effect provides a quantitative description of the optical spectra and of the time dynamics of a set of high quality quantum wells with well characterized structural parameters.

Published
2001

13. Mesoscopic-capacitor effect inGaN/AlxGa1−xNquantum wells: Effects on the electronic states

Author

Di Carlo, A., primary, Reale, A., additional, Lugli, P., additional, Traetta, G., additional, Lomascolo, M., additional, Passaseo, A., additional, Cingolani, R., additional, Bonfiglio, A., additional, Berti, M., additional, Napolitani, E., additional, Natali, M., additional, Sinha, S. K., additional, Drigo, A. V., additional, Vinattieri, A., additional, and Colocci, M., additional

Published
2001
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14. Optical and Transport Properties of GaN/Al0.15Ga0.85N Quantum Wells

Author

Lomascolo, M., primary, Traetta, G., additional, Passaseo, A., additional, Longo, M., additional, Cannoletta, D., additional, Cingolani, R., additional, Bonfiglio, A., additional, Della Sala, F., additional, Di Carlo, A., additional, Lugli, P., additional, Natali, M., additional, Sinha, S.K., additional, Berti, M., additional, Drigo, A.V., additional, Botchkarev, H., additional, and Morkoc, H., additional

Published
2000
Full Text
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