1. Polarization-controlled Ohmic to Schottky transition at a metal/ferroelectric interface.
- Author
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Xiaohui Liu, Yong Wang, Burton, J. D., and Tsymba, Evgeny Y.
- Subjects
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FERROELECTRIC crystals , *SCHOTTKY barrier , *POLARIZATION (Electricity) , *OHMIC contacts , *ELECTRIC conductivity , *ELECTROSTATIC interaction - Abstract
Ferroelectric polar displacements have recently been observed in conducting electron-doped BaTiO3 (n-BTO). The coexistence of a ferroelectric phase and conductivity opens the door to new functionalities that may provide a unique route for novel device applications. Using first-principles methods and electrostatic modeling, we explore the effect that the switchable polarization of n-BTO has on the electronic properties of the SrRuO3/n-BTO (001) interface. Ferroelectric polarization controls the accumulation or depletion of electron charge at the interface, and the associated bending of the n-BTO conduction band determines the transport regime across the interface. The interface exhibits a Schottky tunnel barrier for one polarization orientation, whereas an Ohmic contact is present for the opposite polarization orientation, leading to a large change in interface resistance associated with polarization reversal. Our calculations reveal a five orders of magnitude change in the interface resistance because of polarization switching. [ABSTRACT FROM AUTHOR]
- Published
- 2013
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