1. High-speed, high-reliability GaN power device with integrated gate driver
- Author
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Tang, Gaofei, Kwan, M.-H., Zhang, Zhaofu, He, Jiabei, Lei, Jiacheng, Su, R.-Y., Yao, F.-W., Lin, Y.-M., Yu, J.-L., Yang, Thomas, Chern, Chan-Hong, Tsai, Tom, Tuan, H. C., Kalnitsky, Alexander, Chen, Jing, Tang, Gaofei, Kwan, M.-H., Zhang, Zhaofu, He, Jiabei, Lei, Jiacheng, Su, R.-Y., Yao, F.-W., Lin, Y.-M., Yu, J.-L., Yang, Thomas, Chern, Chan-Hong, Tsai, Tom, Tuan, H. C., Kalnitsky, Alexander, and Chen, Jing
- Abstract
An enhancement-mode GaN power switch with monolithically integrated gate driver is demonstrated on a 650-V GaN-on-Si power device platform. The integrated GaN-based gate driver features advanced designs such as bootstrapped gate-charging current source that enables high current driving capability during the entire turn-on process and rail-to-rail output. The GaN power transistor with integrated gate driver was characterized up to 300 V/15 A switching operations using a double pulse tester, and exhibits suppressed gate ringing and fast switching speed. The peak drain voltage slew rate d V/dt is above 125 V/ns during turn-on, and 336 V/ns during turn-off.
- Published
- 2018