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The GaAs nanowires are grown on Si (111) substrates by Ga-assisted molecular beam epitaxy growth technique. The effect of SiO2 thickness on the structural properties of GaAs nanowires is investigated by Scanning Electron Microscope (SEM). The nucleation of GaAs nanowires related to the presence of a SiO2 layer previously coated on Si substrate. The results show that the density, length, and diameter of GaAs nanowires strongly depend on the oxidation time (or SiO2 thickness).

We report on the study on effect of Ga pre-deposition rate on GaAs nanowires grown by self-assisted vapor-liquid-solid (VLS) method. Ga droplets were initially deposited on the surface of Si(111) substrates covered with thin layer of SiO2. The nanowires were grown by molecular beam epitaxy (MBE). Dependency of structural of nanowires on Ga pre-deposition rate is investigated by Scanning Electron Microscope (SEM), Energy-dispersive X-ray spectroscopy (EDX), and X-ray Diffraction Analysis (XRD). The experimental results show that the different in Ga pre-deposition rate significantly affect the surface morphology of samples. Growth rate and the density of nanowires strongly depends on the Ga pre-deposition rate.