32 results on '"Waldhoff, N."'
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2. Suppression of contact noise in a study on 1/f noise as a function of film thickness in Al-doped ZnO
3. Aluminum doped ZnO thin films deposited by direct current sputtering: Structural and optical properties
4. Sb-HEMT: toward 100-mV cryogenic electronics
5. 1/f noise as function of thickness in Al-doped ZnO thin films
6. Effects of thickness on 1/f noise of Co and In co-doped ZnO
7. Microwave characterization of tunable interdigitated capacitors on BTS thin films deposited by sol-gel
8. Extraction des performances AC et bruit HF d'une technologie CMOS 45 nm en gamme mmW
9. Optimisation des performances à faible tension de polarisation de HEMTs de la filière antimoine
10. Bias point optimization for low power/low noise applications of advanced SiGe HBT
11. [Invited] On-wafer S-parameters and noise measurements from D to J-band
12. Noise characterization of mmW Si devices using classical and in-situ experimental set up
13. 325 GHz CPW band pass filter integrated in advanced HR SOI RF CMOS technology
14. Potentialités de la technologie CMOS 65nm sur substrat SOI haute résistivité pour les applications millimétriques : amplificateur faible bruit et antenne intégrés sur un même substrat
15. Mesures de bruit en gamme millimétrique : limitations et solutions
16. S-parameters measurements and small signal modeling of sub-65nm silicon MOSFETs up to 220 GHz
17. Extraction du schéma équivalent petit signal et bruit jusque 110 GHz pour les technologies CMOS 65nm
18. Erreurs de mesures liées à l'environnement des composants silicium RF « on-wafer » en bande millimétrique
19. 480-GHz $f_{\max}$ in InP/GaAsSb/InP DHBT With New Base Isolation $\mu$-Airbridge Design
20. Low-Noise Microwave Performance of AlN/GaN HEMTs Grown on Silicon Substrate
21. Small signal and HF noise performance of 45 nm CMOS technology in mmW range
22. 100mV noise performances of Te-doped Sb-HEMT
23. Improved Characterization Methology for MOSFETs up to 220 GHz
24. Small Signal and Noise Equivalent Circuit for CMOS 65 nm up to 110 GHz
25. Bias point optimization for low power / low noise applications of advanced SiGe HBT.
26. 100mV noise performances of Te-doped Sb-HEMT.
27. Potentiality of commercial metamorphic HEMT at cryogenic temperature and low voltage operation.
28. 325GHz CPW band pass filter integrated in advanced HR SOI RF CMOS technology.
29. Investigation of SiGe HBT potentialities under cryogenic temperature.
30. 480-GHz f\max in InP/GaAsSb/InP DHBT With New Base Isolation \mu-Airbridge Design.
31. Potentiality of commercial metamorphic HEMT at cryogenic temperature and low voltage operation
32. 325GHz CPW band pass filter integrated in advanced HR SOI RF CMOS technology
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