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Electrooptic sampling and heterodyne techniques were used to measure the optical frequency response of epitaxial lift-off 1.0 micron InP high-electron mobility transistors to 140 GHz. It was found that lift-off devices can be used at millimeter wave frequencies with no degradation response. The epitaxial lift-off process was cited of great potential in the integration of millimeter wave optoelectronic integrated systems.

Picosecond optoelectronic sampling techniques were utilized in measuring the magnetic penetration depth of UBa2Cu3O7-x superconducting thin films. A mode-locked Nd:YAG pumped dye laser was employed to generate 8 ps full width at half maximum electrical pulses on photoconductive switches. The electrical pulses were then propagated on 255 mm long superconducting delay lines. A temperature-squared dependence on the penetration depth was observed.