209 results on '"Warner, Jeffrey H."'
Search Results
2. Gaas Displacement Damage Dosimeter Based on Diode Dark Currents
3. A deep level transient spectroscopy study of electron and proton irradiated p(super+)n GaAs diodes
4. Effect of proton and silicon ion irradiation on defect formation in GaAs
5. Displacement damage evolution in GaAs following electron, proton and silicon ion irradiation
6. Effect of omnidirectional proton irradiation on shielded solar cells
7. Correlation of electron radiation induced-damage in GaAs solar cells
8. Displacement damage correlation of proton and silicon ion radiation in GaAs
9. Criteria for identifying radiation resistant semiconductor materials
10. Tradeoffs Between RF Performance and SET Robustness in Low-Noise Amplifiers in a Complementary SiGe BiCMOS Platform
11. Electronic-to-Photonic Single-Event Transient Propagation in a Segmented Mach–Zehnder Modulator in a Si/SiGe Integrated Photonics Platform
12. Comparison of X-Ray and Electron Radiation Effects on Dark Current Non-Uniformity and Fluctuations in CMOS Image Sensors
13. Comparison of Single-Event Transients in SiGe HBTs on Bulk and Thick-Film SOI
14. The Impact of Technology Scaling on the Single-Event Transient Response of SiGe HBTs
15. Defect characterization of proton irradiated GaAs pn-junction diodes with layers of InAs quantum dots.
16. Quantifying Low Energy Proton Damage in Multijunction Solar Cells
17. Best Practices for Using Electrostatic Discharge Protection Techniques for Single-Event Transient Mitigation
18. Optimizing Optical Parameters to Facilitate Correlation of Laser- and Heavy-Ion-Induced Single-Event Transients in SiGe HBTs
19. The Effects of Temperature on the Single-Event Transient Response of a High-Voltage (>30 V) Complementary SiGe-on-SOI Technology
20. A Low-Power, Real-Time Displacement Damage Dosimeter
21. SiGe HBT Profiles With Enhanced Inverse-Mode Operation and Their Impact on Single-Event Transients
22. Utilizing SiGe HBT Power Detectors for Sensing Single-Event Transients in RF Circuits
23. Radiation effects testing via semiconductor nonlinear optics: successes and challenges
24. Single-Event Effects in a Millimeter-Wave Receiver Front-End Implemented in 90 nm, 300 GHz SiGe HBT Technology
25. Single-Event Measurement and Analysis of Antimony-Based p-Channel Quantum-Well MOSFETs With High- $\kappa $ Dielectric
26. Single-Event Effects in High-Frequency Linear Amplifiers: Experiment and Analysis
27. Single-Event Transient Response of Comparator Pre-Amplifiers in a Complementary SiGe Technology
28. Using TCAD Modeling to Compare Heavy-Ion and Laser-Induced Single Event Transients in SiGe HBTs
29. Two-photon absorption pulsed-laser single-event effect technique for GaN materials and the impact of deep level traps on the carrier generation process
30. The effects of total ionizing dose on the transient response of SiGe BiCMOS technologies
31. Single event transient response of InGaSb p-MOSFETs using pulsed laser excitation: Comparison of buried-channel and surface-channel structures
32. Comparison of single event transients in AlGaN/GaN Schottky-gate and MIS-gate HEMTs using single-photon absorption and focused X-ray techniques
33. Spatial Mapping of Pristine and Irradiated AlGaN/GaN HEMTs With UV Single-Photon Absorption Single-Event Transient Technique
34. Defect characterization of proton irradiated GaAs pn-junction diodes with layers of InAs quantum dots
35. An Investigation of the Use of Inverse-Mode SiGe HBTs as Switching Pairs for SET-Mitigated RF Mixers
36. An Investigation of Single-Event Effect Modeling Techniques for a SiGe RF Low-Noise Amplifier
37. The Impact of Metal Line Reflections on Through-Wafer TPA SEE Testing
38. The Role of Negative Feedback Effects on Single-Event Transients in SiGe HBT Analog Circuits
39. Single Event Measurement and Analysis of Antimony Based n-Channel Quantum-Well MOSFET With High-$\kappa$Dielectric
40. Single-Event Effects in a W-Band (75-110 GHz) Radar Down-Conversion Mixer Implemented in 90 nm, 300 GHz SiGe HBT Technology
41. GaAs Displacement Damage Dosimeter Based on Diode Dark Currents
42. Optimization of SiGe HBT RF Switches for Single-Event Transient Mitigation
43. UV Single-Photon Absorption Single-Event Transient Testing of Pristine and Irradiated AlGaN/GaN HEMTs
44. An Investigation of Single-Event Transients in C-SiGe HBT on SOI Current Mirror Circuits
45. Design of Radiation-Hardened RF Low-Noise Amplifiers Using Inverse-Mode SiGe HBTs
46. A Dosimetry Methodology for Two-Photon Absorption Induced Single-Event Effects Measurements
47. Single-Event Transient and Total Dose Response of Precision Voltage Reference Circuits Designed in a 90-nm SiGe BiCMOS Technology
48. Simulation of Light-Matter Interaction and Two-Photon Absorption Induced Charge Deposition by Ultrashort Optical Pulses in Silicon
49. On the Transient Response of a Complementary (npn $+$ pnp) SiGe HBT BiCMOS Technology
50. Ion-Induced Charge-Collection Transients in p-Channel AlGaSb/InGaSb Heterojunction Field-Effect Transistors
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.