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2. Gaas Displacement Damage Dosimeter Based on Diode Dark Currents

Author

Warner Jeffrey H., Messenger Scott R., Cress Cory D., Roche Nicolas J-H, Yakes Michael, Clarke Kenneth, Bennett Mitchell F., Jenkins Phillip P., and Walters Robert J.

Subjects
Environmental sciences, GE1-350
Abstract

GaAs diode dark currents are correlated over a very large proton energy range as a function of displacement damage dose (DDD). The linearity of the dark current increase with DDD over a wide range of applied voltage bias deems this device an excellent candidate for a displacement damage dosimeter. Additional proton testing performed in situ enabled error estimate determination to within 10% for simulated space use.

Published
2017
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4. Effect of proton and silicon ion irradiation on defect formation in GaAs

Author

Warner, Jeffrey H., Inguimbert, Christophe, Twigg, Mark E., Messenger, Scott R., Walters, Robert J., Romero, Manuel J., and Summers, Geoffrey P.

Subjects
Electron microscopy -- Analysis, Electron beams -- Analysis, Business, Electronics, Electronics and electrical industries
Abstract

Electrical and structural changes in GaAs are monitored using electron beam induced current (EBIC) and transmission electron microscopy (TEM) measurements after irradiation by protons and silicon ions. It has been determined that higher energy protons (E [greater than or equal to] 10 MeV) and silicon ions disordered regions that are electrically and structurally different than those produced by lower energy protons. The data suggest that these disordered regions are responsible for causing the deviations between experimental data and NIEL. From analyses of the recoil spectra, high energy recoils appear to be responsible for the formation of these disordered regions. Index Terms--Defect formation, disordered regions, displacement damage, EBIC, GaAs, heavy ion, irradiation, NIEL, recoil spectrum, recombination centers, TEM.

Published
2008

5. Displacement damage evolution in GaAs following electron, proton and silicon ion irradiation

Author

Warner, Jeffrey H., Messenger, Scott R., Walters, Robert J., Summers, Geoffrey P., Romero, Manuel J., and Burke, Edward A.

Subjects
Gallium arsenide -- Analysis, Spectrum analysis -- Usage, Photovoltaic power generation -- Analysis, Business, Electronics, Electronics and electrical industries
Abstract

We characterize radiation induced defects in n-type GaAs following electron, proton, and silicon ion irradiations using Deep Level Transient Spectroscopy (DLTS) and Electron Beam Induced Current (EBIC) measurements. EBIC micrographs show the existence of radiation induced recombination centers following high energy proton (E > 50 MeV) or 22 MeV silicon ion irradiations, which were not observed following 1 MeV electron or 2 MeV proton irradiations. The evolution of the U-band defect as determined by DLTS seems to occur when active recombination centers are observed in the EBIC images and therefore, appears to be produced by high energy recoils probably creating defect clusters. Index Terms--Displacement damage, DLTS, EBIC, GaAs, heavy ion, irradiation, NIEL, photovoltaic, recoil spectrum, recombination center.

Published
2007

6. Effect of omnidirectional proton irradiation on shielded solar cells

Author

Messenger, Scott R., Burke, Edward A., Walters, Robert J., Warner, Jeffrey H., Summers, Geoffrey P., and Morton, Thomas L.

Subjects
Solar batteries -- Research, Solar cells -- Research, Energy dissipation -- Research, Business, Electronics, Electronics and electrical industries
Abstract

An analysis of the effects of low energy proton irradiation on the electrical performance of triple junction (3J) InGa[P.sub.2]/GaAs/Ge solar cells is presented. The Monte Carlo ion transport code SRIM is used to simulate the damage profile induced in a 3J solar cell under the conditions of typical ground testing and that of the omnidirectional space environment. The results are used to present a quantitative analysis of the defect, and hence damage, distribution induced in the cell active region by the different radiation conditions. The modeling results show that, in the space environment where the incident radiation is omnidirectional, the solar cell will experience a uniform damage distribution through the active region of the cell. The cases of directional spectrum irradiation and omnidirectional irradiation through very thin shielding are also considered. Through an application of the displacement damage dose analysis methodology, the implications of this result on mission performance predictions are investigated. Index Terms--Displacement damage, nonionizing energy loss, radiation effects, solar cells.

Published
2006

7. Correlation of electron radiation induced-damage in GaAs solar cells

Author

Warner, Jeffrey H., Messenger, Scott R., Walters, Robert J., Summers, Geoffrey P., Lorentze, Justin R., Wilt, David M., and Smith, Mark A.

Subjects
Electrons -- Usage, Electrons -- Properties, Gallium arsenide -- Usage, Solar batteries -- Research, Solar cells -- Research, Business, Electronics, Electronics and electrical industries
Abstract

Abstract--GaAs solar cells with different structures and polarities were irradiated with 1 and 5 MeV electrons. The energy dependence of the electron damage coefficients for the photocurrent, photovoltage, and maximum power were found to vary approximately linearly with NIEL in contrast to what has been found for other GaAs cells. Index Terms--Damage correlation, displacement damage, electron displacement damage, GaAs solar cells, nonionizing energy loss (NIEL), radiation damage.

Published
2006

8. Displacement damage correlation of proton and silicon ion radiation in GaAs

Author

Warner, Jeffrey H., Messenger, Scott R., Walters, Robert J., and Summers, Geoffrey P.

Subjects
Solar batteries -- Research, Solar cells -- Research, Irradiation -- Research, Gallium arsenide -- Research, Business, Electronics, Electronics and electrical industries
Abstract

We present results of displacement damage correlation between 2 MeV protons and 22 MeV silicon ion irradiation damage in [p.sup.+] n GaAs solar cells. The radiation induced degradation of the photovoltaic response correlates well in terms of displacement damage dose. Index Terms--Damage correlation, displacement damage, GaAs solar cells, ion irradiation, nonionizing energy loss (NIEL), proton irradiation, radiation damage, SRIM.

Published
2005

9. Criteria for identifying radiation resistant semiconductor materials

Author

Messenger, Scott R., Burke, Edward A., Summers, Geoffrey P., Walters, Robert J., and Warner, Jeffrey H.

Subjects
Semiconductors -- Properties, Semiconductors -- Research, Nonionizing radiation -- Research, Business, Electronics, Electronics and electrical industries
Abstract

An index that would reliably rank the relative radiation hardness of semiconductors would be very helpful for selecting materials for many applications. The concept of 'concentration of primary defects' (CPD) has been proposed as such an index. Here we show that for the GaAs-InP family of semiconductors used in solar cells, CPD yields results that do not agree with experiment. The long-established concept of damage constants for various semiconductor properties is a more reliable index. For solar cells the relevant damage constant is that for the degradation of minority carrier lifetime. Although the damage constants reported for different semiconductors are specific to a particular type and energy of radiation, we show they can be extended beyond the type and particle energy for which they were originally determined by using nonionizing energy loss (NIEL), thereby greatly extending their possible application. Index Terms--Displacement damage, nonionizing energy loss (NIEL).

Published
2005

11. Electronic-to-Photonic Single-Event Transient Propagation in a Segmented Mach–Zehnder Modulator in a Si/SiGe Integrated Photonics Platform

Author

Tzintzarov, George N., primary, Buchner, Stephen P., additional, McMorrow, Dale, additional, Warner, Jeffrey H., additional, Kaynak, Mehmet, additional, Zimmermann, Lars, additional, Cressler, John D., additional, Ildefonso, Adrian, additional, Goley, Patrick S., additional, Frounchi, Milad, additional, Nergui, Delgermaa, additional, Rao, Sunil G., additional, Teng, Jeffrey, additional, Campbell, Jacob, additional, and Khachatrian, Ani, additional

Published
2020
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13. Comparison of Single-Event Transients in SiGe HBTs on Bulk and Thick-Film SOI

Author

Ildefonso, Adrian, primary, Warner, Jeffrey H., additional, Cressler, John D., additional, Tzintzarov, George N., additional, Nergui, Delgermaa, additional, Omprakash, Anup P., additional, Goley, Patrick S., additional, Hales, Joel M., additional, Khachatrian, Ani, additional, Buchner, Stephen P., additional, and McMorrow, Dale, additional

Published
2020
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14. The Impact of Technology Scaling on the Single-Event Transient Response of SiGe HBTs

Author

Lourenco, Nelson E., Fleetwood, Zachary E., Ildefonso, Adrian, Wachter, Mason T., Roche, Nicolas J.-H., Khachatrian, Ani, McMorrow, Dale, Buchner, Stephen P., Warner, Jeffrey H., Paki, Pauline, Raman, Ashok, Cressler, John D., Itsuji, Hiroaki, Kobayashi, Daisuke, and Hirose, Kazuyuki

Subjects
Nuclear and High Energy Physics, Materials science, Heterojunction bipolar transistor, single-event transient (SET), 02 engineering and technology, silicongermanium technology, BiCMOS, 01 natural sciences, SiGe HBT, chemistry.chemical_compound, single-event effects (SEE), 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Transient response, Electrical and Electronic Engineering, Scaling, Common emitter, 010308 nuclear & particles physics, business.industry, hardening, 020208 electrical & electronic engineering, Doping, Charge collection, Electrical engineering, semiconductor process scaling, NanoTCAD, Silicon-germanium, radiation, technology scaling, Nuclear Energy and Engineering, chemistry, Optoelectronics, Transient (oscillation), two-photon absorption experiments, business
Abstract

著者人数: 15名, Accepted: 2016-11-08, 資料番号: SA1160320000

Published
2017

15. Defect characterization of proton irradiated GaAs pn-junction diodes with layers of InAs quantum dots.

Author

Shin-ichiro Sato, Schmieder, Kenneth J., Hubbard, Seth M., Forbes, David V., Warner, Jeffrey H., Takeshi Ohshima, and Walters, Robert J.

Subjects
SOLID state proton conductors, SEMICONDUCTOR diodes, QUANTUM dots, SEMICONDUCTOR devices, SEMICONDUCTOR defects
Abstract

In order to expand the technology of III-V semiconductor devices with quantum structures to both terrestrial and space use, radiation induced defects as well as native defects generated in the quantum structures should be clarified. Electrically active defects in GaAs p+n diodes with embedded ten layers of InAs quantum dots (QDs) are investigated using Deep Level Transient Fourier Spectroscopy. Both majority carrier (electron) and minority carrier (hole) traps are characterized. In the devices of this study, GaP layers are embedded in between the QD layers to offset the compressive stress introduced during growth of InAs QDs. Devices are irradiated with high energy protons for three different fluences at room temperature in order to characterize radiation induced defects. Seven majority electron traps and one minority hole trap are found after proton irradiation. It is shown that four electron traps induced by proton irradiation increase in proportion to the fluence, whereas the EL2 trap, which appears before irradiation, is not affected by irradiation. These defects correspond to electron traps previously identified in GaAs. In addition, a 0.53 eV electron trap and a 0.14 eV hole trap are found in the QD layers before proton irradiation. It is shown that these native traps are also unaffected by irradiation. The nature of the 0.14 eV hole trap is thought to be Ga-vacancies in the GaP strain balancing layers. [ABSTRACT FROM AUTHOR]

Published
2016
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16. Quantifying Low Energy Proton Damage in Multijunction Solar Cells

Author

Messenger, Scott R, Burke, Edward A, Walters, Robert J, Warner, Jeffrey H, Summers, Geoffrey P, Lorentzen, Justin R, Morton, Thomas L, and Taylor, Steven J

Subjects
Space Sciences (General)
Abstract

An analysis of the effects of low energy proton irradiation on the electrical performance of triple junction (3J) InGaP2/GaAs/Ge solar cells is presented. The Monte Carlo ion transport code (SRIM) is used to simulate the damage profile induced in a 3J solar cell under the conditions of typical ground testing and that of the space environment. The results are used to present a quantitative analysis of the defect, and hence damage, distribution induced in the cell active region by the different radiation conditions. The modelling results show that, in the space environment, the solar cell will experience a uniform damage distribution through the active region of the cell. Through an application of the displacement damage dose analysis methodology, the implications of this result on mission performance predictions are investigated.

Published
2007

18. Optimizing Optical Parameters to Facilitate Correlation of Laser- and Heavy-Ion-Induced Single-Event Transients in SiGe HBTs

Author

Ildefonso, Adrian, primary, Fleetwood, Zachary E., additional, Tzintzarov, George N., additional, Hales, Joel M., additional, Nergui, Delgermaa, additional, Frounchi, Milad, additional, Khachatrian, Ani, additional, Buchner, Stephen P., additional, Mcmorrow, Dale, additional, Warner, Jeffrey H., additional, Harms, Joseph, additional, Erickson, Anna, additional, Voss, Kay, additional, Ferlet-Cavrois, Veronique, additional, and Cressler, John D., additional

Published
2019
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19. The Effects of Temperature on the Single-Event Transient Response of a High-Voltage (>30 V) Complementary SiGe-on-SOI Technology

Author

Omprakash, Anup P., primary, Ildefonso, Adrian, additional, Fleetwood, Zachary E., additional, Tzintzarov, George N., additional, Cardoso, Adilson S., additional, Babcock, Jeffrey A., additional, Mukhopadhyay, Rajarshi, additional, Khachatrian, Ani, additional, Warner, Jeffrey H., additional, McMorrow, Dale, additional, Buchner, Stephen P., additional, and Cressler, John D., additional

Published
2019
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21. SiGe HBT Profiles With Enhanced Inverse-Mode Operation and Their Impact on Single-Event Transients

Author

Fleetwood, Zachary E., primary, Ildefonso, Adrian, additional, Tzintzarov, George N., additional, Wier, Brian, additional, Raghunathan, Uppili, additional, Cho, Moon-Kyu, additional, Song, Ickhyun, additional, Wachter, Mason T., additional, Nergui, Delgermaa, additional, Khachatrian, Ani, additional, Warner, Jeffrey H., additional, McMarr, Patrick, additional, Hughes, Harold, additional, Zhang, Enxia, additional, McMorrow, Dale, additional, Paki, Pauline, additional, Joseph, Alvin, additional, Jain, Vibhor, additional, and Cressler, John D., additional

Published
2018
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24. Single-Event Effects in a Millimeter-Wave Receiver Front-End Implemented in 90 nm, 300 GHz SiGe HBT Technology

Author

Zeinolabedinzadeh, Saeed, primary, Ulusoy, Ahmet C., additional, Inanlou, Farzad, additional, Ying, Hanbin, additional, Gong, Yunyi, additional, Fleetwood, Zachary E., additional, Roche, Nicolas J.-H., additional, Khachatrian, Ani, additional, McMorrow, Dale, additional, Buchner, Stephen P., additional, Warner, Jeffrey H., additional, Paki, Pauline, additional, and Cressler, John D., additional

Published
2017
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25. Single-Event Measurement and Analysis of Antimony-Based p-Channel Quantum-Well MOSFETs With High- $\kappa $ Dielectric

Author

Barth, Michael, primary, Kumar, Archana, additional, Warner, Jeffrey H., additional, Bennett, Brian R., additional, Cress, Cory D., additional, Boos, J. Brad, additional, Roche, Nicolas J.-H., additional, Raine, Melanie, additional, Gaillardin, Marc, additional, Paillet, Philippe, additional, McMorrow, Dale, additional, Saraswat, Krishna, additional, and Datta, Suman, additional

Published
2017
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27. Single-Event Transient Response of Comparator Pre-Amplifiers in a Complementary SiGe Technology

Author

Ildefonso, Adrian, primary, Lourenco, Nelson E., additional, Fleetwood, Zachary E., additional, Wachter, Mason T., additional, Tzintzarov, George N., additional, Cardoso, Adilson S., additional, Roche, Nicolas J.-H., additional, Khachatrian, Ani, additional, McMorrow, Dale, additional, Buchner, Stephen P., additional, Warner, Jeffrey H., additional, Paki, Pauline, additional, Kaynak, Mehmet, additional, Tillack, Bernd, additional, and Cressler, John D., additional

Published
2017
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28. Using TCAD Modeling to Compare Heavy-Ion and Laser-Induced Single Event Transients in SiGe HBTs

Author

Fleetwood, Zachary E., primary, Lourenco, Nelson E., additional, Ildefonso, Adrian, additional, Warner, Jeffrey H., additional, Wachter, Mason T., additional, Hales, Joel M., additional, Tzintzarov, George N., additional, Roche, Nicolas J.-H., additional, Khachatrian, Ani, additional, Buchner, Steven P., additional, McMorrow, Dale, additional, Paki, Pauline, additional, and Cressler, John D., additional

Published
2017
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29. Two-photon absorption pulsed-laser single-event effect technique for GaN materials and the impact of deep level traps on the carrier generation process

Author

Roche, Nicolas J-H., primary, Khachatrian, Ani, additional, King, Michael, additional, Buchner, Stephen P., additional, Halles, Joel, additional, Kaplar, Robert, additional, Armstrong, Andrew, additional, Kizilyalli, Isik. C., additional, Cunningham, Paul D., additional, Melinger, Joseph S., additional, Warner, Jeffrey H., additional, and McMorrow, Dale, additional

Published
2016
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30. The effects of total ionizing dose on the transient response of SiGe BiCMOS technologies

Author

Wachter, Mason T., primary, Ildefonso, Adrian, additional, Fleetwood, Zachary E., additional, Lourenco, Nelson E., additional, Tzintzarov, George, additional, McMorrow, Dale, additional, Roche, Nicolas J.-H., additional, Khachatrian, Ani, additional, McMarr, Patrick, additional, Hughes, Harold, additional, Warner, Jeffrey H., additional, Paki, Pauline, additional, and Cressler, John D., additional

Published
2016
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31. Single event transient response of InGaSb p-MOSFETs using pulsed laser excitation: Comparison of buried-channel and surface-channel structures

Author

Warner, Jeffrey H., primary, Kumar, Archana, additional, Barth, Michael, additional, Cress, Cory D., additional, McMorrow, Dale, additional, Boos, J. Brad, additional, Bennett, Brian R., additional, Buchner, Stephen P., additional, Roche, Nicolas J-H., additional, Khachatrian, Ani, additional, Saraswat, Krishna, additional, and Data, Suman, additional

Published
2016
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32. Comparison of single event transients in AlGaN/GaN Schottky-gate and MIS-gate HEMTs using single-photon absorption and focused X-ray techniques

Author

Khachatrian, Ani, primary, Roche, Nicolas J-H., additional, Buchner, Stephen P., additional, Koehler, Andrew D., additional, Anderson, Travis J., additional, Warner, Jeffrey H., additional, Cunningham, Paul D., additional, Melinger, Joseph. S., additional, McMorrow, Dale, additional, LaLumondiere, Steven D., additional, Wells, N. P., additional, Tockstein, M. A., additional, Brewe, D. L., additional, Dillingham, E. C., additional, Bonsall, J. P., additional, Karuza, P., additional, Lotshaw, W. T., additional, and Moss, S. C., additional

Published
2016
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35. An Investigation of the Use of Inverse-Mode SiGe HBTs as Switching Pairs for SET-Mitigated RF Mixers

Author

Song, Ickhyun, primary, Raghunathan, Uppili S., additional, Lourenco, Nelson E., additional, Fleetwood, Zachary E., additional, Oakley, Michael A., additional, Jung, Seungwoo, additional, Cho, Moon-Kyu, additional, Roche, Nicholas J.-H., additional, Khachatrian, Ani, additional, Warner, Jeffrey H., additional, Buchner, Stephen P., additional, McMorrow, Dale, additional, Paki, Pauline, additional, and Cressler, John D., additional

Published
2016
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36. An Investigation of Single-Event Effect Modeling Techniques for a SiGe RF Low-Noise Amplifier

Author

Lourenco, Nelson E., primary, Zeinolabedinzadeh, Saeed, additional, Ildefonso, Adrian, additional, Fleetwood, Zachary E., additional, Coen, Christopher T., additional, Song, Ickhyun, additional, Jung, Seungwoo, additional, Inanlou, Farzad, additional, Roche, Nicolas J.-H., additional, Khachatrian, Ani, additional, McMorrow, Dale, additional, Buchner, Stephen P., additional, Warner, Jeffrey H., additional, Paki, Pauline, additional, and Cressler, John D., additional

Published
2016
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38. The Role of Negative Feedback Effects on Single-Event Transients in SiGe HBT Analog Circuits

Author

Seungwoo, Jung, primary, Song, Ickhyun, additional, Fleetwood, Zachary E., additional, Raghunathan, Uppili, additional, Lourenco, Nelson E., additional, Oakley, Michael A., additional, Wier, Brian R., additional, Roche, Nicolas J.-H., additional, Khachatrian, Ani, additional, McMorrow, Dale, additional, Buchner, Stephen P., additional, Warner, Jeffrey H., additional, Paki, Pauline, additional, and Cressler, John D., additional

Published
2015
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40. Single-Event Effects in a W-Band (75-110 GHz) Radar Down-Conversion Mixer Implemented in 90 nm, 300 GHz SiGe HBT Technology

Author

Zeinolabedinzadeh, Saeed, primary, Song, Ickhyun, additional, Raghunathan, Uppili S., additional, Lourenco, Nelson E., additional, Fleetwood, Zachary E., additional, Oakley, Michael A., additional, Cardoso, Adilson S., additional, Roche, Nicolas J.-H., additional, Khachatrian, Ani, additional, McMorrow, Dale, additional, Buchner, Stephen P., additional, Warner, Jeffrey H., additional, Paki-Amouzou, Pauline, additional, and Cressler, John D., additional

Published
2015
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41. GaAs Displacement Damage Dosimeter Based on Diode Dark Currents

Author

Warner, Jeffrey H., primary, Messenger, Scott R., additional, Cress, Cory D., additional, Walters, Robert J., additional, Roche, Nicolas J.-H., additional, Clark, Kenneth A., additional, Bennett, Mitchell F., additional, Blackmore, Ewart W., additional, and Trinczek, Michael, additional

Published
2015
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42. Optimization of SiGe HBT RF Switches for Single-Event Transient Mitigation

Author

Song, Ickhyun, primary, Jung, Seungwoo, additional, Lourenco, Nelson E., additional, Raghunathan, Uppili S., additional, Fleetwood, Zachary E., additional, Cho, Moon-Kyu, additional, Roche, Nicholas J.-H., additional, Khachatrian, Ani, additional, Warner, Jeffrey H., additional, Buchner, Stephen P., additional, McMorrow, Dale, additional, Paki, Pauline, additional, and Cressler, John D., additional

Published
2015
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44. An Investigation of Single-Event Transients in C-SiGe HBT on SOI Current Mirror Circuits

Author

Jung, Seungwoo, primary, McMorrow, Dale, additional, Buchner, Stephen P., additional, Melinger, Joseph S., additional, Warner, Jeffrey H., additional, Paki-Amouzou, Pauline, additional, Babcock, Jeff A., additional, Cressler, John D., additional, Lourenco, Nelson E., additional, Song, Ickhyun, additional, Oakley, Michael A., additional, England, Troy D., additional, Arora, Rajan, additional, Cardoso, Adilson S., additional, Roche, Nicolas J.-H., additional, and Khachatrian, Ani, additional

Published
2014
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45. Design of Radiation-Hardened RF Low-Noise Amplifiers Using Inverse-Mode SiGe HBTs

Author

Song, Ickhyun, primary, Jung, Seungwoo, additional, Lourenco, Nelson E., additional, Raghunathan, Uppili S., additional, Fleetwood, Zachary E., additional, Zeinolabedinzadeh, Saeed, additional, Gebremariam, Tikurete B., additional, Inanlou, Farzad, additional, Roche, Nicholas J.-H., additional, Khachatrian, Ani, additional, McMorrow, Dale, additional, Buchner, Stephen P., additional, Melinger, Joseph S., additional, Warner, Jeffrey H., additional, Paki-Amouzou, Pauline, additional, and Cressler, John D., additional

Published
2014
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47. Single-Event Transient and Total Dose Response of Precision Voltage Reference Circuits Designed in a 90-nm SiGe BiCMOS Technology

Author

Cardoso, Adilson S., primary, Chakraborty, Partha S., additional, Karaulac, Nedeljko, additional, Fleischhauer, David M., additional, Lourenco, Nelson E., additional, Fleetwood, Zachary E., additional, Omprakash, Anup P., additional, England, Troy D., additional, Jung, Seungwoo, additional, Najafizadeh, Laleh, additional, Roche, Nicolas J.-H., additional, Khachatrian, Ani, additional, Warner, Jeffrey H., additional, McMorrow, Dale, additional, Buchner, Stephen P., additional, Zhang, En Xia, additional, Zhang, Cher Xuan, additional, McCurdy, Michael W., additional, Reed, Robert A., additional, Fleetwood, Daniel M., additional, Paki-Amouzou, Pauline, additional, and Cressler, John D., additional

Published
2014
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48. Simulation of Light-Matter Interaction and Two-Photon Absorption Induced Charge Deposition by Ultrashort Optical Pulses in Silicon

Author

Hales, Joel M., primary, McMorrow, Dale, additional, Roche, Nicolas J-H., additional, Khachatrian, Ani, additional, Warner, Jeffrey H., additional, Buchner, Stephen P., additional, Melinger, Joseph S., additional, Perry, Joseph W., additional, Lotshaw, William T., additional, and Dubikovsky, Vladislav, additional

Published
2014
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49. On the Transient Response of a Complementary (npn $+$ pnp) SiGe HBT BiCMOS Technology

Author

Lourenco, Nelson E., primary, Fleetwood, Zachary E., additional, Jung, Seungwoo, additional, Cardoso, Adilson S., additional, Chakraborty, Partha S., additional, England, Troy D., additional, Roche, Nicolas J.-H., additional, Khachatrian, Ani, additional, McMorrow, Dale, additional, Buchner, Stephen P., additional, Melinger, Joseph S., additional, Warner, Jeffrey H., additional, Paki, Pauline, additional, Kaynak, Mehmet, additional, Tillack, Bernd, additional, Knoll, Dieter, additional, and Cressler, John D., additional

Published
2014
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