1. Device engineering of p-CuAlO2/β-Ga2O3 interface: A staggered-gap band-alignment
- Author
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Chowdam Venkata Prasad, Madani Labed, Mohammad Tauquir Alam Shamim Shaikh, Ji Young Min, Tan Hoang Vu Nguyen, Wonjin Song, Jang Hyeok Park, Kyong Jae Kim, Sangmo Kim, Sinsu Kyoung, Nouredine Sengouga, and You Seung Rim
- Subjects
p-CuAlO2 ,β-Ga2O3 ,Heterojunction ,On-resistance ,Breakdown voltage ,Materials of engineering and construction. Mechanics of materials ,TA401-492 - Abstract
In this work, by controlling the oxygen flow rate (OFR) (from 0% to 30%), we suggest using a p-type copper aluminum oxide (p-CuAlO2) interlayer to enhance the high breakdown and low leakage current for β-Ga2O3-based power device applications. Results of AFM measurements on p-CuAlO2 films performed using various OFRs demonstrate that greater OFRs result in an increase in film roughness payable to the unavoidable leading of defects/oxygen vacancy (VO). We used XPS and TEM analysis to validate the surface elemental compositions, chemical states, band offsets and microstructural properties of p-CuAlO2/β-Ga2O3 heterojunction (HJ) with different OFRs. With increasing OFR from 0% to 17.6%, the VBO and CBO values of HJ were decreased from 1.73 eV to 1.23 eV and from 0.53 eV to 0.38 eV respectively. Then, with increasing OFR from 17.6% to 30%, VBO was decreased from 1.23 eV to 1.13 eV while CBO increased from 0.38 eV to 0.58 eV. The staggered-gap (type-II) across the p-CuAlO2/β-Ga2O3 HJ is identified the entire OFRs. The rising tendency of optical bandgap (Eg) of p-CuAlO2 with range of OFRs, a maximum Eg of 4.35 eV was obtained with OFR of 30%. Furthermore, the electrical and carrier transport properties of p-CuAlO2/β-Ga2O3 HJ were studied using I–V and C–V techniques. The reverse breakdown voltage (Vbr) of HJ is strongly dependent on OFRs. With increasing OFRs, Vbr was decreased from 937 V to 924 V, and then to 1000 V with increasing OFR from 0% to 17.6% and then to 30%. In addition, a decrease in the interface state density (NSS) with increasing OFRs was observed which indicates that oxygen may be an effective surface passivation. Analysis confirmed that Poole-Frenkel emission dominates the reverse leakage current of all the HJ samples. The type-II p-CuAlO2/β-Ga2O3 HJ may facilitate the design and manufacture of high-performance β-Ga2O3-based heterojunctions and advance optoelectronic devices.
- Published
- 2023
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