1. Analysis of anisotropic ionization coefficient in bulk 4H-SiC with full-band Monte Carlo simulation
- Author
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Yoshinari Kamakura, Y. Ueoka, K. Konaga, T. Kotani, R. Fujita, and Nobuya Mori
- Subjects
010302 applied physics ,Physics ,Monte Carlo method ,Ionization coefficient ,Full band ,02 engineering and technology ,021001 nanoscience & nanotechnology ,01 natural sciences ,Electron transport chain ,Computational physics ,Electric field ,0103 physical sciences ,Statistical physics ,0210 nano-technology ,Anisotropy - Abstract
High-field electron transport characteristics in bulk 4H-SiC are simulated with the full-band Monte Carlo method, and anisotropy of the ionization coefficient α is discussed. The simulation results exhibit larger α along 〈1120〉 direction than 〈0001〉 direction, which is consistent with the experimental observation. Furthermore, the dependence of α on the electric field direction θ is investigated. Compared to the existing analytical model, the present simulation results show a steeper increase when θ is tilted from the c-axis, which is originated from the anisotropic nature of the hot-electron heating.
- Published
- 2017
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