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A power storage system using spherical Si solar cells, lithium-ion battery and a direct current-alternating current (DC-AC) converter was constructed. A small and light inverter system was developed by combining a maximum power point tracking charge controller, direct current-direct current (DC-DC) converter, and DC-AC converter. Performance evaluation of the inverter system with SiC field-effect transistors (FET) and Schottky barrier diodes (SBD) was carried out, and the DC-AC conversion efficiencies and their stability of the inverter were improved compared with those of the ordinary Si-FET/SBD based inverter.

Arsenic (As) and chlorine (Cl) were co-doped to CH3NH3PbI3 perovskite solar cells, and the photovoltaic properties were investigated. AsI3 and NH4Cl were added to perovskite precursor solution, which were deposited on mesoporous TiO2 by a spin-coating combining an air flow method. Current density-voltage characteristics and incident photon-to-current conversion efficiencies were improved by the co-doping of As and Cl to the perovskite phase, which also indicated an energy gap of 1.57 eV. X-ray diffraction showed suppression of PbI2 formation by the AsI3 addition. The structure analysis by scanning electron microscopy indicated formation of a homogeneous microstructure by adding AsI3 with NH4Cl, which would result in the improvement of the photovoltaic properties.

A compact 150 W photovoltaic inverter was developed using SiC devices, which integrated a maximum power point tracking charge controller and a direct current (DC) - alternating current (AC) converter into a single module. The DC-AC converter circuit was built with four SiC metal-oxidesemiconductor field-effect transistors, while the DC-DC converter circuit built with four SiC Schottky barrier diodes. An increase of the switching frequency led to the module of a reduced size (250 × 180 × 28 mm3), which is just one third volume of a commercial Si-based inverter available today. Besides being compact, the conversion efficiency of the DC-AC converter was approximately 3% higher than that of the commercial Si-based inverter. In addition, the MPPT controller showed a conversion efficiency exceeding 96%, which raised the total efficiency under practical operation conditions up to 86%.

100-W class power storage systems were developed, which comprised spherical Si solar cells, a maximum power point tracking charge control-ler, a lithium-ion battery, and one of two different types of direct current (DC)-alter- nating current (AC) converters. One inverter used SiC met-al-oxide-semicon-ductor field-effect transistors (MOSFETs) as switching devices while the other used Si MOSFETs. In these 100-W class inverters, the ON resistance was considered to have little influence on the efficiency. Nevertheless, the SiC-based inverter exhibited an approximately 3% higher DC-AC conversion efficiency than the Si-based inverter. Power loss analysis indicated that the higher efficiency resulted predominantly from lower switching and reverse recovery losses in the SiC MOSFETs compared with in the Si MOSFETs.

Perovskite-type photovoltaic devices with polysilane hole transport layers were fabricated by a spin-coating method. In the present work, poly(methyl phenylsilane) (PMPS) and decaphenylcyclopentasilane (DPPS) were used as the hole transport layers. First, structural and optical properties of the PMPS and DPPS films were investigated, and the as-prepared PMPS and DPPS films were amorphous. Optical absorption spectra of the amorphous PMPS and DPPS showed some marked features due to the nature of polysilanes. Then, microstructures, optical and photovoltaic properties of the perovskite-type photovoltaic devices with polysilane hole transport layers were investigated. Current density-voltage characteristics and incident photon to current conversion efficiency of the photovoltaic devices with the polysilane layers showed different photovoltaic performance each other, attributed to molecular structures of the polysilanes and Si content in the present hole transport layers.

In this paper, structural and photovoltaic properties of perovskite CH3NH3PbI3-xClx solar cells added with ammonium iodide (NH4I) are reported. The CH3NH3PbI3-xClx photovoltaic cells were fabricated by a hot air blow-assisted spin-coating method. By addition of NH4I, photovoltaic performance of the CH3NH3PbI3-xClx cell fabricated by the hot air blow-assisted spin-coating method was improved. The microstructure analysis of the resulting cells showed that the NH4I− added CH3NH3PbI3-xClx film was highly oriented along the (100) plane. Moreover, morphological changes of the NH4I− added CH3NH3PbI3-xClx film due to NH4I addition were also observed. The improvements of the photovoltaic performance, the crystal orientation, and the morphological changes of the CH3NH3PbI3-xClx are attributed to NH4I addition.

In this paper, the Chemical Beam Epitaxy approach to GaAsN material growth has been investigated. Photoluminescence and Hall effect measurements were performed to clarify the influence of defects on the transport properties, those of holes in particular. The PL intensity of near-band emission (1.35 eV-peak) for GaAs0.996N0.004 at low temperature ( 1) indicated that the N atoms were alloyed in a disordered arrangement. As a result, the corresponding alloy scattering mechanism was enhanced, contributing to the hole mobility decrease. However, compared to p-type GaAsN grown by MBE or MOCVD, our CBE-grown GaAsN showed a higher value of hole mobility.

Inflammatory myofibroblastic tumor (IMT) is a rare but benign entity masquerading as a malignant tumor. We herein report an 18-month-old boy with small bowel wall IMT who presented with intussusception. He was transferred to our hospital with a complaint of abdominal pain and diagnosed with intussusception. On laparotomy, the small bowel wall mass consisted of solid tissue measuring 2.5 × 3.0 cm. The postoperative pathology examination revealed numerous spindle cells arranged in dense bundles with diffuse infiltration of inflammatory cells and tumor involvement of the mucosa and serosa. As the postoperative pathology examination resulted in a diagnosis of IMT and suspected partial resection, small bowel resection and mesenteric lymph node resection were performed two months after the first operation. A pathology examination after the second surgery revealed no evidence of residual IMT and negative findings for metastasis in the regional lymph nodes. IMT is a locally aggressive lesion. The immunophenotypic feature of ALK-1 in particular is associated with a high recurrence rate. Long-term follow-up is absolutely needed. Keywords: Inflammatory myofibroblastic tumour, Small intestine, Child, Intussusception, Anaplastic lymphoma kinase

An 81-year-oldwoman with advancedgastric cancer was referredto our hospital. Preoperative contrast-enhancedCT revealeda roundcalcification of the splenic hilum with 15mm in diameter as a splenic artery aneurysm. She underwent transcatheter arterial embolization(TAE)for the splenic artery aneurysm. Celiac artery angiography showedcollateral arterial network of the spleen from left gastric artery. Surgery for the gastric cancer was performed1 4 days after TAE. We cut the right gastric andbilateral epigastric arteries. After the left gastric artery clamping, we performedintraoperative indocyanine green(ICG)fluorography. ICG fluorography confirmedthat the bloodflow of the upper thirdof the stomach andspleen were maintained. We safely performed distal gastrectomy, and the postoperative course was uneventful.

Thermally driven magnetization switching of perpendicularly magnetized [Cu/Ni] multilayer/BaTiO 3 (100) heterostructures is demonstrated. While the magnetization of the multilayer shows the out-of-plane magnetic anisotropy in the tetragonal phase of BaTiO 3 at room temperature, the magnetization orientation is found to switch from the out-of-plane to the in-plane in the rhombohedral phase below 180 K. The magnetization switching is attributed to the interfacial compressive strain transfer from BaTiO 3 to [Cu/Ni] due to the structural phase transitions of BaTiO 3 . Magneto-optical polar Kerr measurement in the rhombohedral phase with and without applying an electric field supports the description that the magnetization switching arises from the compressive strain at the interface induced by the structural phase transition from the orthorhombic to rhombohedral phases.

Photovoltaic properties of copper (Cu)-doped perovskite (CH3NH3PbCuxI3+x) photovoltaic devices with different Cu content were investigated. The CH3NH3PbCuxI3+x films were polycrystalline with a tetragonal system, and their lattice constants and crystallite size varied with Cu doping. Compared to conversion efficiencies of non-doped CH3NH3PbI3 photovoltaic device, those of CH3NH3PbCuxI3+x photovoltaic devises increased. The improvement of photovoltaic properties was attributed to partial substitution of Cu at the Pb sites.

Surface and inside of silicon (Si) spheres prepared by a powder melting method were investigated. The lattice constant of the inside of Si spheres was larger than that of the surface of Si spheres, which was due to interstitial atoms trapped at gettering sites. To obtain the evidence for existence of the impurities, composition analysis was carried out. Florescence spectra of the surface and inside of Si spheres exhibited some information on impurities in both Si spheres.

Effects of AsI3 and NH4Cl addition to perovskite CH3NH3PbI3 precursor solutions on photovoltaic properties were investigated. TiO2/CH3NH3Pb(As)I3(Cl)-based photovoltaic devices were fabricated by a spin-coating technique, and the microstructures of the devices were investigated by X-ray diffraction and scanning electron microscopy. Current density-voltage characteristics and incident photon-to-current conversion efficiencies were improved by a small amount of As- and Cl-doping, which resulted in improvement of the efficiencies of the devices.

This article reports comparative study of 150-300 W class photovoltaic inverters (Si inverter, SiC inverter 1, and SiC inverter 2). In these sub-kW class inverters, the ON-resistance was considered to have little influence on the efficiency. The developed SiC inverters, however, have exhibited an approximately 3% higher direct current (DC)-alternating current (AC) conversion efficiency as compared to the Si inverter. Power loss analysis indicated a reduction in the switching and reverse recovery losses of SiC metal-oxide-semiconductor field-effect transistors used for the DC-AC converter is responsible for this improvement. In the SiC inverter 2, an increase of the switching frequency up to 100 kHz achieved a state-of-the-art combination of the weight (1.25 kg) and the volume (1260 cm3) as a 150-250 W class inverter. Even though the increased switching frequency should cause the increase of the switching losses, the SiC inverter 2 exhibited an efficiency comparable to the SiC inverter 1 with a switching f...

Perovskite-type CH3NH3(MA)PbI3−based photovoltaic devices were fabricated and characterized. Doping effects of cesium iodide (CsI), cesium bromide (CsBr) and tin bromide (SnBr2) on the photovoltaic properties and surface microstructures of the perovskite phase were investigated. Short-circuit current densities, open-circuit voltages and fill factors increased by CsI and SnBr2 addition. The surface coverage of the perovskite crystals was also improved by SnBr2 doping, which resulted in improvement of the fill factor. The cell prepared by a starting composition of MA0.95Cs0.05Pb0.95Sn0.05I2.90Br0.10 showed the best photovoltaic performance in the present work.

Bismuth ferrite (BiFeO3) thin films were prepared by a spin-coating method. Crystal structure and optical properties of the BiFeO3 films were evaluated using X-ray diffraction. The lattice constants, crystallite size, and energy gap of BiFeO3 films depended on the concentration of the BiFeO3 precursor solution. BiFeO3/CH3NH3PbI3 photovoltaic devices were fabricated to investigate photovoltaic properties of BiFeO3. Current density–voltage characteristics of the photovoltaic devices showed rectifying behavior, indicating that BiFeO3 worked as an electron transport layer in CH3NH3PbI3-based photovoltaic devices.

Bismuth ferrite (BiFeO 3 ) thin films were fabricated by a simple spin-coating method. Polycrystalline BiFeO 3 thin films were confirmed by X-ray diffraction. Lattice constants and crystallite sizes of the BiFeO 3 thin films increased with increasing concentration of BiFeO 3 precursor solution. BiFeO 3 /CH3NH3PbI3 photovoltaic devices were fabricated to characterize photovoltaic properties. Current density-voltage characteristics of the photovoltaic devices exhibited rectifying behaviors, indicating that BiFeO 3 layer acted an electron transport layer.

Microstructures of spherical silicon solar cells with SnOx:Fy layers were investigated. Lattice constants of annealed SnOx:Fy layers were larger than those of as-prepared SnOx:Fy layers due to reduction of defects. From energy dispersive X-ray spectroscopy, it was confirmed that oxygen, fluorine and tin were diffused over silicon spheres, and composition ratios of the SnOx:Fy layers were changed by annealing. The mechanism of chemical reaction of SnO2 and SnO2/metal interface were also discussed.

A photovoltaic power generation system using spherical silicon (Si) solar cells and silicon carbide (SiC) field effect transistor (FET) inverter for photovoltaic applications was constructed and evaluated. The spherical Si solar cells were connected to the SiC-FET inverter and were used as a power source. Comparing the photovoltaic power generation system using an ordinary Si-FET inverter, direct current-alternating current conversion efficiencies of the SiC-FET inverter were improved due to reduction of power loss in the SiC-FET inverter.

ZnO nanorods/perovskite solar cells with different lengths of ZnO nanorods were fabricated. The ZnO nanorods were prepared by chemical bath deposition and directly confirmed to be hexagon-shaped nanorods. The lengths of the ZnO nanorads were controlled by deposition condition of ZnO seed layer. Photovoltaic properties of the ZnO nanorods/CH3NH3PbI3 solar cells were investigated by measuring current density-voltage characteristics and incident photon to current conversion efficiency. The highest conversion efficiency was obtained in ZnO nanorods/CH3NH3PbI3 with the longest ZnO nanorods.

Microstructures, optical and photovoltaic properties of CH3NH3PbI3(1−x)Cl x perovskite films with copper(I) thiocyanate (CuSCN) additive were investigated. The CuSCN-added CH3NH3PbI3(1−x)Cl x films were prepared by a hot air blow-assisted spin-coating method. Current density–voltage characteristics of the photovoltaic device using the CuSCN-added CH3NH3PbI3(1−x)Cl x light-absorbing layer showed increases in short-circuit current density, open-circuit voltage, which resulted in increase in the conversion efficiency. Microstructure analysis showed that the crystal structure of the CuSCN-added CH3NH3PbI3(1−x)Cl x was a pseudocubic system. From these results, partial substitutions of Pb2+ and anions (I− and Cl−) by Cu ions (Cu+ and Cu2+) and SCN−, respectively, are considered to occur in the CuSCN-added CH3NH3PbI3(1−x)Cl x films. Based on the obtained results, reaction mechanisms of the CH3NH3PbI3(1−x)Cl x films with and without CuSCN additive were discussed.

Mn-doped AgInS2 crystals are grown by a hot-press method at 700 °C for 1 hour under high pressure of 25 MPa from stoichiometric Ag2S and In2S3 powders with the Mn atoms with a concentration between 5 and 20 mol.%. Mn-doped crystals showed diffraction lines of orthorhombic AgInS2 and AgIn5S8 in addition to the dominant lines of chalcopyrite AgInS2. The S composition in the crystals is slightly deficient independent of the Mn concentration. Electron states of Mn are studied by an electron spin resonance (ESR) at room temperature. The ESR intensity of the Mn-doped crystals increases with an increase in the Mn concentration. The g -factors at room temperature of the Mn-doped crystals are in the range 1.980-1.982 with the peak-to-peak linewidth in the range 4.5-8.9 mT. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Perpendicularly magnetized layers are used widely for high-density information storage in magnetic hard disk drives and nonvolatile magnetic random access memories. Writing and erasing of information in these devices is implemented by magnetization switching in local magnetic fields or via intense pulses of electric current. Improvements in energy efficiency could be obtained when the reorientation of perpendicular magnetization is controlled by an electric field. Here, we report on reversible electric-field-driven out-of-plane to in-plane magnetization switching in Cu/Ni multilayers on ferroelectric BaTiO3 at room temperature. Fully deterministic magnetic switching in this hybrid material system is based on efficient strain transfer from ferroelastic domains in BaTiO3 and the high sensitivity of perpendicular magnetic anisotropy in Cu/Ni to electric-field-induced strain modulations. We also demonstrate that the magnetoelectric coupling effect can be used to realize 180° magnetization reversal if the out-of-plane symmetry of magnetic anisotropy is temporarily broken by a small magnetic field. An electric-field switching technique can lower the energy required to write and erase data in high-density magnetic storage devices. Perpendicularly magnetic recording is a new technology that aligns magnetic bits into vertical arrangements using specially constructed multilayer films. Normally, magnetic fields or intense bursts of electric currents are needed to modify individual bits. Tomoyasu Taniyama from the Tokyo Institute of Technology and international collaborators have discovered that growing perpendicularly magnetised copper-nickel multilayers on top of ferroelectric BaTiO3 crystals produces devices responsive to modest electric fields. Laser-based measurements and theoretical analysis revealed that this fast, reversible, and room temperature data switching method was driven by mechanical strain at the metal multilayer-ferroelectric interface. Successful results with films up to 65 nanometers thick indicate that this approach holds promise for practical spintronics applications. Reversible electric-field-driven magnetization switching between perpendicular-to-plane and in-plane orientations in Cu/Ni multilayers on ferroelectric BaTiO3 is demonstrated at room temperature. Fully deterministic magnetic switching is based on efficient strain transfer from ferroelastic domains in BaTiO3 and the high sensitivity of perpendicular magnetic anisotropy in Cu/Ni to electric-field-induced strain modulations. The magnetoelectric coupling effect can also be used to realize 180° magnetization reversal if the out-of-plane symmetry of magnetic anisotropy is temporarily broken by a small magnetic field.

Control of magnetic domain-wall motion by electric fields has recently attracted scientific attention because of its potential for magnetic logic and memory devices. Here, we report on a new driving mechanism that allows for magnetic domain-wall motion in an applied electric field without the concurrent use of a magnetic field or spin-polarized electric current. The mechanism is based on elastic coupling between magnetic and ferroelectric domain walls in multiferroic heterostructures. Pure electric-field-driven magnetic domain-wall motion is demonstrated for epitaxial Fe films on BaTiO3 with in-plane and out-of-plane polarized domains. In this system, magnetic domain-wall motion is fully reversible and the velocity of the walls varies exponentially as a function of out-of-plane electric-field strength.

All cancer patients, particularly those treated for colorectal cancer, should be monitored for the presence of liver metastases, but liver metastases from ovarian clear cell carcinoma are quite rare. We report a patient subjected to extended left hepatectomy due to a giant metastasis 5 years after surgical treatment for an ovarian neoplasm that was histopathologically diagnosed as clear cell carcinoma. A 58-year-old woman had undergone hysterectomy and bilateral salpingo-oophorectomy due to ovarian cancer (stage Ic). Four years and 8 months after the operation, a computed tomography (CT) scan demonstrated a giant tumor in the left lobe of the liver. The tumor compressed the inferior vena cava (IVC), but it was not clear whether it invaded the vessel. She received chemotherapy for 4 months; however, the tumor did not decrease in size. She was subsequently referred to our institution and was submitted to operation after it was confirmed that there were no distant metastases. After being subjected to an extended left hepatectomy and cholecystectomy, the patient recovered from the surgery without any complications. She has been carefully followed for 17 months and has presented no evidence of recurrence.

Familial hypercholesterolemia is a rare inherited disease with an incidence of approximately one per million. Severe hypercholesterolemia is observed from the time of birth onwards. It is associated with severe atherosclerosis in childhood, leading to death from myocardial infarction before the age of 20 years. Liver transplantation is the only effective treatment for this disease. We experienced the case of an infant aged 2 years 5 months who had homozygous familial hypercholesterolemia and who received a liver graft from his father, who had familial heterozygous hypercholesterolemia. The pre-operative plasma cholesterol level was800 mg/dl. After liver transplantation, the recipient's cholesterol level decreased to 250 mg/dl after we administered the HMG-CoA reductase inhibitor. At present, 6 months after transplantation, the patient is doing well and free from a special diet. We can thus conclude that the combination therapy of liver transplantation from a donor with heterozygous familial hypercholesterolemia on cholesterol-lowering drugs is an effective therapy for a patient with the homozygous type of hypercholesterolemia.

This paper presents the effects of copper (Cu) addition on the photovoltaic properties of perovskite CH3NH3PbI3−xClx solar cells. The effects were investigated by measuring the current density–voltage (J–V) characteristics and external quantum efficiency. In the present work, CuBr and CuBr2 were used as additives. The photovoltaic properties of the CuBr-added CH3NH3PbI3−xClx devices showed a clear improvement. Structural and optical properties of the CuBr- and CuBr2-added CH3NH3PbI3−xClx films were also investigated. Based on the present results, the changes in the photovoltaic properties were discussed.

The usefulness of oxaliplatin(L-OHP)as adjuvant chemotherapy for Stage III colon cancer has been shown in clinical trials, such as the MOSAIC trial. The Leucovorin, fluorouracil, and oxaliplatin(FOLFOX)regimen has been recommended as adjuvant chemotherapy for colorectal cancer in Japan. In the MOSAIC trial, 74.7% of patients completed all planned treatment cycles. Neurological toxicity caused byL -OHP is one of the factors for discontinuing treatment. Therefore, we planned to administer FOLFOX4 as postoperative adjuvant chemotherapy and evaluated the safety and feasibility of this regimen.From November 2009, 13 patients with Stage III colon cancer who had undergone complete resection of a primary tumor were enrolled. Patients received 4 cycles of FOLFOX4, followed by 4 cycles of the simplified fluorouracil and Leucovorin (LV5FU2)regimen and 4 additional cycles of FOLFOX4(12 cycles in total).Thirteen patients were treated with our FOLFOX4 regimen. In total, 11 patients(84.6%)completed all 12 planned treatment cycles. The median L-OHP dose per patient was 560mg/m / 2(compared with the per-protocol 12-cycle dose of 680 mg/m2). Grade 1 neurological toxicity during treatment was reported in 10 patients(76.9%). Neurological toxicity was reduced during the 4 cycles without L-OHP.Our FOLFOX4 regimen showed reduced neurological toxicity compared to other trials and can be used safely.

Spin filtering at perpendicular magnetized Cu/Ni multilayer/GaAs(001) interfaces is demonstrated at remanence using optical spin orientation method. [Cu(9 nm)/Ni(tNi nm)]n multilayers are found to show a crossover from the in-plane to out-of-plane magnetic anisotropy at the Cu/Ni bilayer repetition n = 4 and the Ni layer thickness tNi = 3. For a perpendicularly magnetized Cu/Ni multilayer/n-GaAs(001) interface, circular polarization dependent photocurrent shows a clear hysteretic behavior under optical spin orientation conditions as a function of magnetic field out-of-plane while the bias dependence exhibits a substantial peak at a forward bias, verifying that Cu/Ni multilayers work as an efficient spin filter in the remanent state.

Background We have developed a gene transfection system using laser beams. The principle of this procedure is that a small hole is made in a cell membrane by pulse laser irradiation, and a gene contained in a medium is transferred into the cytoplasm through the hole. This hole disappears immediately with the application of laser irradiation of the appropriate power. Methods A pulse-wave Nd:YAG laser with a wavelength of 355 nm was used to make a hole in a cell membrane. To trap a cell, a continuous-wave Nd:YAG laser with a wavelength of 1015 nm was used. Plasmids that encode the enhanced green fluorescent protein (EGFP) gene were contained in a medium and transferred to HuH-7 and NIH/3T3 cells with pulse laser irradiation. We evaluated transfection efficiency on the basis of the number of cells that expressed EGFP. Stimulatory protein 2 cells in suspension were fixed using a trapping laser and the neomycin-resistance gene was transfected by pulse laser irradiation. We examined cell proliferation in the selection medium. Results Cells that expressed EGFP were recognized in the group that was irradiated by pulse laser. No cells expressed EGFP without irradiation. Transfection efficiency was ≈10% at a plasmid concentration of 10.0 μg/mL. At concentrations greater than 20 μg/mL, the transfection rate reached a plateau. We also successfully transfected neomycin-resistance genes to cells floating in suspension after fixation that was achieved with trapping laser irradiation. Conclusions This method enables us to transfect targeted cells, ie, cells in suspension as well as attached cells, with a simple technique that does not involve harmful vectors. The present method is very useful for gene transfection in cellular biotechnology.

Effects of polysilane-doped 2,2′,7,7′-tetrakis-(N,N-di-p-methoxyphenylamino)-9,9′-spirobifluorene (spiro-OMeTAD) hole transport layers on photovoltaic properties were investigated by measuring current density–voltage characteristics and incident photon-to-current conversion efficiency of CH3NH3PbI3-based photovoltaic devices. Three kinds of polysilanes were used as the dopants. Due to the polysilane doping, conversion efficiencies of the CH3NH3PbI3 devices using the polysilane-doped hole transport layers were improved. Microstructures of the CH3NH3PbI3 devices were also investigated. Based on the results of the microstructure analysis, impact of silicon in the polysilanes doped into spiro-OMeTAD layer on photovoltaic properties were discussed.

ISHIBASHI, S., NAMIKI, K., ABE, M., SHIRAHATA, Y., OHNISHI, K., TOYODA, T. and OHUCHI, K. Cystic Adventitial Disease of the Popliteal Artery-A Case of Young Boy. Tohoku J. Exp. Med., 1995, 176 (3), 173-180-Cystic adventitial disease (CAD) of the popliteal artery (PA) is rare but one of the well-recognized causes of intermittent claudication. Now more than 200 case reports are available in the world, but there are only 6 cases younger than 15 years old. In this paper, we report a case of 14-year-old boy with CAD of the PA found by intermittent claudication. On examination, the pulses were not palpable below the right popliteal artery, and the angiography demonstrated about 1.5 cm-long obstruction of the right PA. We operated a resection of a cyst with artery, and replaced the autovein graft (V. saphena magna). Cyst contained mucoid degeneration-like ganglion. Two weeks after operation, the angiography showed no stenotic lesion, and follow-up at 4 years showed no symptoms.

Electron spin transmission across ferromagnetic metal/semiconductor interfaces with different ferromagnetic contacts, i.e., Fe and FeGa, is studied using optical spin orientation method. The bias dependence of spin dependent photocurrent, which is the difference between the photocurrents excited with left- and right- handed circularly polarized lights, is found to show a dip-like feature at -0.058 and 0.021 V for Fe and FeGa contacts, respectively. The origin of the bias dependence of the spin dependent photocurrent is discussed on the basis of the Breit-Wigner type resonant tunneling process via interface resonant states, comparing the results for the both contacts. The results also indicate that the control of interface states is crucial to achieve efficient spin filtering effect at the ferromagnet/semiconductor interfaces.

We report on the inversion of spin-dependent photocurrent via interface localized states formed at the interface of an Fe/n-AlGaAs/GaAs quantum well heterostructure by means of an optical spin orientation technique. A careful adjustment of the excitation photon energy, which is determined by a separate analysis of electroluminescence spectra under a spin injection condition, enables us to explore the spin-dependent characteristics of photoelectron transmission from the quantum well into Fe. The bias dependence of the spin-dependent photocurrent shows clear spikelike features at the voltage which is compatible with the formation of the interface localized resonant states in the Schottky depletion layer.