169 results on '"Yeo, Y.-C."'
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2. Breaking the Speed Limits of Phase-Change Memory
3. Nano Superlattice-like Materials as Thermal Insulators for Phase-Change Random Access Memory
4. SPICE behavioral model of the tunneling field-effect transistor for circuit simulation
5. The role of carbon and dysprosium in Ni[Dy]Si:C contacts for Schottky-barrier height reduction and application in N-channel MOSFETs with Si:C source/drain stressors
6. Work function tuning of metal nitride electrodes for advanced CMOS devices
7. Valence Band Parameters for Wurtzite GaN and InN
8. Analysis of Optical Gain of Strained Wurtzite InxGa1-xN/GaN Quantum Well Lasers
9. 5nm CMOS Production Technology Platform featuring full-fledged EUV, and High Mobility Channel FinFETs with densest 0.021µm2 SRAM cells for Mobile SoC and High Performance Computing Applications
10. Characterization of thin-film GaAs diodes grown on germanium-on-insulator on Si substrate.
11. Valence band structure of ultrathin silicon and germanium channels in metal-oxide-semiconductor field-effect transistors.
12. InAs FinFETs with Hfin = 20 nm fabricated using a top-down etch process
13. Scaling perspective for III-V broken gap nanowire TFETs: An atomistic study using a fast tight-binding mode-space NEGF model
14. (Invited) Enabling Hetero-Integration of III-V and Ge-Based Transistors on Silicon with Ultra-Thin Buffers Formed by Interfacial Misfit Technique
15. InAs nanowire GAA n-MOSFETs with 12–15 nm diameter
16. High performance In0.53Ga0.47As FinFETs fabricated on 300 mm Si substrate
17. InAs FinFETs With Hfinnm Fabricated Using a Top–Down Etch Process
18. Role of AlxGa1-xAs buffer layer in heterogeneous integration of GaAs/Ge.
19. A self-rectifying A1Oy bipolar RRAM with sub-50μA set/reset current for cross-bar architecture
20. Mode space tight binding model for ultra-fast simulations of III-V nanowire MOSFETs and heterojunction TFETs
21. In0.53Ga0.47As MOSFETs with high channel mobility and gate stack quality fabricated on 300 mm Si substrate
22. Enhancement mode strained (1.3%) germanium quantum well FinFET (WFin=20nm) with high mobility (μHole=700 cm2/Vs), low EOT (∼0.7nm) on bulk silicon substrate
23. Drive Current Performance of Inversion Mode Ge CMOS Transistors
24. (Invited) Germanium-Tin P-Channel Field-Effect Transistor with Low-Temperature Si2H6 Passivation
25. Integration of TaOx-based resistive-switching element and GaAs diode
26. Erratum: “Characterization of thin-film GaAs diodes grown on germanium-on-insulator on Si substrate” [J. Appl. Phys. 111, 044504 (2012)]
27. (Invited) Tin-Incorporated Source/Drain and Channel Materials for Field-Effect Transistors
28. Electronic Band Structure and Effective Masses of Ge1-xSnx Alloys
29. In Situ Boron (B) Doped Germanium (Ge:B) Grown on (100), (110), and (111) Silicon: Crystal Orientation and B Incorporation Effects
30. Germanium Tin Tunneling Field Effect Transistor for Sub-0.4 V Operation
31. High Hole Mobility in Strained Germanium-Tin (GeSn) Channel pMOSFET Fabricated on (111) Substrate
32. Tunneling Field-Effect Transistor (TFET) with Novel Ge/In0.53Ga0.47As Tunneling Junction
33. Junctionless Π‐gate transistor with indium gallium arsenide channel
34. InAs FinFETs With \textrm H\mathrm {fin}=20 nm Fabricated Using a Top–Down Etch Process.
35. Self-Selection Unipolar $\hbox{HfO}_{x}$ -Based RRAM
36. Engineering grains of Ge2Sb2Te5 for realizing fast-speed, low-power, and low-drift phase-change memories with further multilevel capabilities
37. A Self-Rectifying $\hbox{AlO}_{y}$ Bipolar RRAM With Sub-50-$\mu\hbox{A}$ Set/Reset Current for Cross-Bar Architecture
38. CMOS Contact Resistance Reduction through Aluminum Profile Engineering
39. Nickel Stanogermanide Ohmic Contact on N-type Germanium-Tin (Ge1-xSnx) using Se and S Implant and Segregation
40. Switching Model of TaOx-based Non-polar Resistive Random Access Memory
41. Selective Growth of Gallium Arsenide on Germanium Fins with Different Orientations formed on 10 degrees Offcut Germanium-on-Insulator Substrate
42. AlGaN/GaN-on-Sapphire MOS-HEMTs with Breakdown Voltage of 1400 V and On-State Resistance of 22 mΩ.cm2 using a CMOS-Compatible Gold-Free Process
43. Novel 2-bit Multi-level PCRAM Structure with a Triple-layered Phase Change Material Stack for High-density Storage Applications
44. PCRAM Operation at Dram Speeds: Experimental Demonstration and Computer‐Simulational Understanding
45. High Hole Mobility in Strained Germanium-Tin (GeSn) Channel pMOSFET Fabricated on (111) Substrate
46. Tunneling Field-Effect Transistor with Novel Ge/In0.53Ga0.47As Tunneling Junction
47. Multiple-Gate In0.53Ga0.47As Channel n-MOSFETs with Self-Aligned Ni-InGaAs Contacts
48. A Self-Rectifying $\hbox{HfO}_{x}$ -Based Unipolar RRAM With NiSi Electrode
49. Effects of in situ Surface Passivation of AlGaN/GaN MOS-HEMT: A Simulation Study
50. Germanium/Ni-InGaAs Solid-State Reaction for Contact Resistance Reduction on n+ In0.53Ga0.47As
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