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This study is aimed to investigate the differences in the clinical features and surgical outcomes between hypopnea- and apnea-predominant obstructive sleep apnea (OSA).Cohort study.Single tertiary care centre.This study included 190 patients with OSA who underwent multilevel upper airway surgery between September 2012 and September 2021. The patients were divided into two groups according to the proportion of each respiratory event: hypopnea-predominant (n = 102) and apnea-predominant (n = 88).The primary outcome measure was the percentage improvement in the apnea-hypopnea index (AHI) from baseline AHI after surgery.The apnea-predominant group included more male patients and had higher AHI, respiratory disturbance index (RDI) and oxygen desaturation index (ODI) than the hypopnea-predominant group. Both groups showed significant improvements in AHI, apnea index, RDI, supine AHI, REM AHI, non-REM AHI, ODI, lowest OPatients with apnea-predominant OSA had more severe disease than those with hypopnea-predominant OSA; however, surgical outcomes, as evaluated by percentage AHI improvement, were comparable between the two groups. In addition, multilevel upper airway surgery may induce the transition from apnea to hypopnea in patients with apnea-predominant OSA.

Background and Objectives: Osteomas are the most common benign tumors of the nasal cavity and paranasal sinuses (PNSs). In this study, clinical features and imaging findings were analyzed in patients with osteoma confirmed by ostiomeatal unit (OMU) computed tomography (CT) and PNS CT, and the surgical treatment performed at our hospital was introduced.Methods: The Severance Clinical Research Analysis Portal (SCRAP) service of Severance Hospital was used to collect research data. A total of 128 cases of osteomas of the nasal cavity or PNSs confirmed by OMU CT or PNS CT was retrospectively reviewed, including the location and size of the osteoma, clinical features, accompanying findings on imaging tests, and cases of surgical treatment.Results: In this study, osteomas were found in about 0.55% of patients who underwent computed tomography. Osteomas were most frequently found in the ethmoid sinus, followed by the frontal sinus, fronto-ethmoid sinus, maxillary sinus, intranasal sphenoid sinus, and maxillary sinus-ethmoid sinus. Patients with osteomas complained of symptoms such as rhinorrhea, postnasal drip, nasal congestion, hyposmia, headache, visual disturbance, and lacrimal duct obstruction.Conclusion: Surgical treatment was considered for patients presenting with severe headache, visual field symptoms, or accompanying rhinosinusitis. Surgery was performed by endoscopic or external approaches depending on location and size of the osteoma.

By affecting the tongue position and oropharyngeal airway volume, torus mandibularis is an anatomical factor associated with obstructive sleep apnea (OSA). This study aimed to investigate the influence of torus mandibularis on the surgical outcomes of multilevel upper airway surgery with tongue base resection (TBR) in patients with OSA. Patients with OSA who underwent palatal surgery and TBR were retrospectively analyzed. The patients were divided into two groups according to the presence or absence of torus mandibularis upon physical examination or on computed tomography images. The anatomical characteristics of the upper airway and pre/postoperative polysomnography were analyzed. The control and torus mandibularis groups comprised 69 and 35 patients, respectively, with all of them showing improved sleep quality after surgery. Apnea-hypopnea index (AHI) scores decreased from 42.1 ± 22.2 preoperatively to 23.9 ± 21.4 postoperatively in the control group (p 0.001), and from 45.2 ± 19.9 to 22.5 ± 13.5 in the torus mandibularis group (p 0.001). Comparing the postoperative changes in AHI, the AHI of the torus mandibularis group improved by 22.7 ± 23.4, whereas that of the control group improved by 18.1 ± 19.6 (p = 0.296). Sleep efficiency improved from 90.0 ± 7.5 to 92.8 ± 6.8 in the control group, and from 90.3 ± 8.7 to 93.6 ± 6.5 in the torus mandibularis group; however, there was no statistical difference between the two groups (p = 0.816). The presence of torus mandibularis did not appear to significantly affect the surgical results in OSA patients, but it did elicit significant changes in polysomnographic parameters compared with the control group. Therefore, following the identification of torus mandibularis in OSA patients, TBR should be considered as part of planning, as it may help to predict surgical outcomes.

The desire to enhance the efficiency of organic light-emitting devices (OLEDs) has driven to the investigation of advanced materials with fascinating properties. In this work, the efficiency of top-emission OLEDs (TEOLEDs) is enhanced by introducing ampicillin microstructures (Amp-MSs) with dual phases (α-/β-phase) that induce photoluminescence (PL) and electroluminescence (EL). Moreover, Amp-MSs can adjust the charge balance by Fermi level (E

Two-dimensional (2D) devices and their van der Waals (vdW) heterostructures attract considerable attention owing to their potential for next-generation logic and memory applications. In addition, 2D devices are projected to have high integration capabilities, while maintaining nanoscale thickness. However, the fabrication of 2D devices and their circuits is challenging because of the high precision required to etch and pattern ultrathin 2D materials for integration. Here, the fabrication of a graphene via contact architecture to electrically connect graphene electrodes (or leads) embedded in vdW heterostructures is demonstrated. Graphene via contacts comprising of edge and fluorinated graphene (FG) electrodes are fabricated by successive fluorination and plasma etching processes. A one-step fabrication process that utilizes the graphene contacts is developed for a vertically integrated complementary inverter based on n- and p-type 2D field-effect transistors (FETs). This study provides a promising method to fabricate vertically integrated 2D devices, which are essential in 2D material-based devices and circuits.

Cochlear implantation (CI) with subtotal petrosectomy was recommended to avoid the complications for patients with chronic otitis media (COM).To evaluate the surgical outcomes of CI in patients with COM using a one-stage operation with canal wall up mastoidectomy (CWUM).Thirty-five patients with COM who underwent CI with CWUM as a one-stage between 2009 and 2017 were participated. They divided into those with inactive COM and active COM. The anatomical success rate, postoperative complication, and hearing outcomes were analyzed.Twenty-four patients had inactive COM and seven with active COM. Three of the 31 patients (9.7%) had otorrhea from the ear undergone surgery. Two of these three patients had myringitis after CI and their symptoms improved after conservative management. Although infection of the tympanic membrane in the third patient was controlled after conservative management, a perforation was left. Postoperative otorrhea occurred in two patients (8.3%) in the inactive COM group and one patient (14.3%) in the active COM group.This study indicates that infection control and successful implantation can be achieved through a one-stage CI operation with CWUM in selected patients with COM.HIGHLIGHTSAlthough COM was once considered a contraindication to CI, CI in patients with COM has been made feasible by STP before CI or simultaneously with CI.Simultaneous CI with CWUM was performed for 31 patients with COM.Three patients (9.7%) had minor complications after the surgery and only one patient experienced device explantation which was due to device failure.

Two-dimensional (2D) transition metal dichalcogenide (TMD) hetero PN junctions with a van der Waals (vdW) interface have received much attention, because PN diodes are basically important to control the vertical current across the junction. Interestingly, the same vdW PN junction structure can be utilized for junction field-effect transistors (JFETs) where in-plane current is controlled along the junction. However, 2D vdW JFETs seem rarely reported, despite their own advantages to achieve when good vdW junction is secured. Here, we present high-performance p-MoTe2 JFETs using almost perfect vdW organic Alq3/p-MoTe2 junctions and demonstrate organic NPB/n-MoS2 JFETs. The p- and n-channel JFETs stably show high mobilities of 60-80 and ∼800 cm2/V s, respectively, along with a high ON/OFF current ratio (>1 × 105) and minimal gate leakage at 5 V even after a few months. Such performances are attributed to a quality vdW junction at organic layer/TMD interfaces.

Introduction: Fluctuating hearing loss is a distinctive feature caused by SLC26A4 variants. We investigated whether cochlear implantation had protective or deleterious effect on hearing fluctuation in patients with biallelic SLC26A4 variants. Methods: Patients with biallelic SLC26A4 variants (N = 16; age = 10.24 ± 9.20 years) who had unilateral cochlear implantation and consecutive postsurgical, bilateral pure-tone audiograms more than 3 times were selected. We retrospectively reviewed the patients’ medical records from 2008 to 2019 obtained from a tertiary medical center and used the auditory threshold change (Shift) over time as a marker of hearing fluctuation. Fluctuation events were counted, and the Shift of the implanted and contralateral ears was compared using logistic regression with a generalized estimating equation and linear mixed model. A total of 178 values were included. Results: The odds of fluctuating hearing frequency were 11.185-fold higher in the unimplanted ears than in the implanted ears postoperatively (p = 0.001). The extent of fluctuation at 250 and 500 Hz was also significantly lower in the implanted ears than in the unimplanted ears after adjusting for every other effect (p = 0.003 and p < 0.001, respectively). Notably, higher residual hearing was rather associated with lesser fluctuation in frequency and the extent of fluctuation at 500 Hz, indicating residual hearing function is not the positive predictor for hearing fluctuation. Conclusion: In patients with biallelic SLC26A4 variants, cochlear implantation may reduce the frequency and extent of hearing fluctuations.

Very recently, stacked two-dimensional materials are studied, focusing on the van der Waals interaction at their stack junction interface. Here, we report field effect transistors (FETs) with stack...

Near-IR (NIR) light-responsive multimodal nanotherapeutics have been proposed to achieve improved therapeutic efficacy and high specificity in cancer therapy. However, their clinical application is still elusive due to poor biometabolization and short retention at the target site. Here, innovative photoactivatable vanadium-doped adhesive proteinic nanoparticles (NPs) capable of allowing biological photoabsorption and NIR-responsive anticancer therapeutic effects to realize trimodal photothermal-gas-chemo-therapy treatments in a highly biocompatible, site-specific manner are proposed. The photoactivatable tumor-adhesive proteinic NPs can enable efficient photothermal conversion via tunicate-inspired catechol-vanadium complexes as well as prolonged tumor retention by virtue of mussel protein-driven distinctive adhesiveness. The incorporation of a thermo-sensitive nitric oxide donor and doxorubicin into the photoactivatable adhesive proteinic NPs leads to synergistic anticancer therapeutic effects as a result of photothermal-triggered "bomb-like" multimodal actions. Thus, this protein-based phototherapeutic tumor-adhesive NPs have great potential as a spatiotemporally controllable therapeutic system to accomplish effective therapeutic implications for the complete ablation of cancer.

Since transition metal dichalcogenide (TMD) semiconductors are found as two-dimensional van der Waals materials with a discrete energy bandgap, many TMD based field effect transistors (FETs) are reported as prototype devices. However, overall reports indicate that threshold voltage (Vth) of those FETs are located far away from 0 V whether the channel is p- or n-type. This definitely causes high switching voltage and unintended OFF-state leakage current. Here, a facile way to simultaneously modulate the Vth of both p- and n-channel FETs with TMDs is reported. The deposition of various organic small molecules on the channel results in charge transfer between the organic molecule and TMD channels. Especially, HAT-CN molecule is found to ideally work for both p- and n-channels, shifting their Vth toward 0 V concurrently. As a proof of concept, a complementary metal oxide semiconductor (CMOS) inverter with p-MoTe2 and n-MoS2 channels shows superior voltage gain and minimal power consumption after HAT-CN deposi...

Two-dimensional molybdenum disulfide (MoS2) has substantial potential as a semiconducting material for devices. However, it is commonly prepared by mechanical exfoliation, which limits flake size to only a few micrometers, which is not sufficient for processes such as photolithography and circuit patterning. Chemical vapor deposition (CVD) has thus become a mainstream fabrication technique to achieve large-area MoS2. However, reports of conventional photolithographic patterning of large-area 2D MoS2-based devices with high mobilities and low switching voltages are rare. Here we fabricate CVD-grown large-area MoS2 field-effect transistors (FETs) by photolithography and demonstrate their potential as switching and driving FETs for pixels in analog organic light-emitting diode (OLED) displays. We spin-coat an ultrathin hydrophobic polystyrene layer on an Al2O3 dielectric, so that the uniformity of threshold voltage (Vth) of the FETs might be improved. Our MoS2 FETs show a high linear mobility of approximately 10 cm2 V−1 s−1, due to a large grain size around 60 μm, and a high ON/OFF current ratio of 108. Dynamic switching of blue and green OLED pixels is shown at ~5 V, demonstrating their application potential.

Very recently, stacked two-dimensional materials have been studied, focusing on the van der Waals interaction at their stack junction interface. Here, we report field effect transistors (FETs) with stacked transition metal dichalcogenide (TMD) channels, where the heterojunction interface between two TMDs appears useful for nonvolatile or neuromorphic memory FETs. A few nanometer-thin WSe

Autosomal recessive nonsyndromic hearing loss 3 (DFNB3) mainly leads to congenital and severe-to-profound hearing impairment, which is caused by variants in MYO15A. However, audiological heterogeneity in patients with DFNB3 hinders precision medicine in hearing rehabilitation. Here, we aimed to elucidate the heterogeneity of the auditory phenotypes of MYO15A variants according to the affected domain and the feasibilities for acoustic stimulation. We conducted whole-exome sequencing for 10 unrelated individuals from seven multiplex families with DFNB3; 11 MYO15A variants, including the novel frameshift c.900delT (p.Pro301Argfs*143) and nonsense c.4879G > T (p.Glu1627*) variants, were identified. In seven probands, residual hearing at low frequencies was significantly higher in the groups with one or two N-terminal frameshift variants in trans conformation compared to that in the group without these variants. This is consistent with the 56 individuals from the previously published reports that carried a varying number of N-terminal truncating variants in MYO15A. In addition, patients with missense variants in the second FERM domain had better hearing at low frequencies than patients without these variants. Subsequently, acoustic stimulation provided by devices such as hearing aids or cochlear implants was feasible in patients with one or two N-terminal truncating variants or a second FERM missense variant. In conclusion, N-terminal or second FERM variants in MYO15A allow the practical use of acoustic stimulation through hearing aids or electroacoustic stimulation for aural rehabilitation.

Shortage of face masks is a current critical concern since the emergence of coronavirus-2 or SARS-CoV-2 (COVID-19). In this work, we compared the melt-blown (MB) filter, which is commonly used for the N95 face mask, with nanofiber (NF) filter, which is gradually used as an effective mask filter, to evaluate their reusability. Extensive characterizations were performed repeatedly to evaluate some performance parameters, which include filtration efficiency, airflow rate, and surface and morphological properties, after two types of cleaning treatments. In the first cleaning type, samples were dipped in 75% ethanol for a predetermined duration. In the second cleaning type, 75% ethanol was sprayed on samples. It was found that filtration efficiency of MB filter was significantly dropped after treatment with ethanol, while the NF filter exhibited consistent high filtration efficiency regardless of cleaning types. In addition, the NF filter showed better cytocompatibility than the MB filter, demonstrating its harmlessness on the human body. Regardless of ethanol treatments, surfaces of both filter types maintained hydrophobicity, which can sufficiently prevent wetting by moisture and saliva splash to prohibit not only pathogen transmission but also bacterial growth inside. On the basis of these comparative evaluations, the wider use of the NF filter for face mask applications is highly recommended, and it can be reused multiple times with robust filtration efficiency. It would be greatly helpful to solve the current shortage issue of face masks and significantly improve safety for front line fighters against coronavirus disease.

Fluctuating hearing loss is a distinctive feature caused by SLC26A4 variants. We investigated whether cochlear implantation had protective or deleterious effect on hearing fluctuation in patients with biallelic SLC26A4 variants.Patients with biallelic SLC26A4 variants (N = 16; age = 10.24 ± 9.20 years) who had unilateral cochlear implantation and consecutive postsurgical, bilateral pure-tone audiograms more than 3 times were selected. We retrospectively reviewed the patients' medical records from 2008 to 2019 obtained from a tertiary medical center and used the auditory threshold change (Shift) over time as a marker of hearing fluctuation. Fluctuation events were counted, and the Shift of the implanted and contralateral ears was compared using logistic regression with a generalized estimating equation and linear mixed model. A total of 178 values were included.The odds of fluctuating hearing frequency were 11.185-fold higher in the unimplanted ears than in the implanted ears postoperatively (p = 0.001). The extent of fluctuation at 250 and 500 Hz was also significantly lower in the implanted ears than in the unimplanted ears after adjusting for every other effect (p = 0.003 and p0.001, respectively). Notably, higher residual hearing was rather associated with lesser fluctuation in frequency and the extent of fluctuation at 500 Hz, indicating residual hearing function is not the positive predictor for hearing fluctuation.In patients with biallelic SLC26A4 variants, cochlear implantation may reduce the frequency and extent of hearing fluctuations.

Nanofiber membranes for biomedical filtration devices require antibacterial activity to prevent bacterial contamination under moisture conditions while exhibiting biocompatibility. Here, we propose an antibacterial membrane filter composed of electrospun polyacrylonitrile (PAN) nanofibers with a surface functionalized with silver nanoparticles (AgNPs) by a facile wetting process for in situ silver reduction under physiologically mild conditions. Sequential wetting of thermally stabilized PAN nanofibers in silver nitrate (AgNO3) and sodium hydroxide (NaOH) solutions enabled direct control of the amount of synthesized AgNPs and their release behaviors in an aqueous environment. The fabricated AgNPs-functionalized PAN nanofibers (PAN-AgNPs) exhibit the appreciable antibacterial efficiency against Escherichia coli and Staphylococcus aureus bacteria with considerable sustainability for repetitive use. In addition, the generated AgNPs on PAN nanofiber membranes in an adequate loading range also revealed good biocompatibility with mammalian cells. Thus, PAN-AgNPs nanofibers can be practically applied as a promising disinfecting membrane filter for biomedical and hygienic applications.

Two-dimensional (2D) transition metal dichalcogenides (TMDs)-based van der Waals (vdW) PN junctions have been used for heterojunction diodes, which basically utilize out-of-plane current across the junction interface. In fact, the same vdW PN junction structure can be utilized for another important device application, junction field effect transistors (JFETs), where in-plane current is possible along with 2D–2D heterojunction interface. Moreover, the 2D TMD-based JFET can use both p- and n-channel for low voltage operation, which might be its unique feature. Here we report vdW JFETs as an in-plane current device with heterojunction between semiconducting p- and n-TMDs. Since this vdW JFET would have low-density traps at the vdW interface unlike 2D TMD-based metal insulator semiconductor field effect transistors (MISFETs), little hysteresis of 0.0–0.1 V and best subthreshold swing of ~100 mV/dec were achieved. Easy saturation was observed either from n-channel or p-channel JFET as another advantage over 2D MISFETs, exhibiting early pinch-off at ~1 V. Operational gate voltage for threshold was near 0 V and our highest mobility reaches to ~>500 cm2/V·s for n-channel JFET with MoS2 channel. For 1 V JFET operation, our best ON/OFF current ratio was observed to be ~104. Van der Waals heterostructures of atomically thin semiconductors enable junction field effect transistors (JFETs). A team led by Seongil Im at Yonsei University fabricated JFETs using a heterojunction of semiconducting p-MoTe2 (or p-WSe2) and n-MoS2. The p-type transition metal dichalcogenide (TMDC) works as a gate for the n-type TMDC channel, whereas the n-type TMDC operates as a gate for the p-type TMDC channel. Owing to the low density of traps at the van der Waals interface, the devices exhibit low hysteresis of 0.05–0.1 V and achieve a subthreshold swing of ~100 mV/decade. The highest mobility reaches 500 cm2/V·s for the n-channel JFET with MoS2, whereas the p-channel JFET with MoTe2 is characterized by a much lower mobility of ~13 cm2/V·s. The highest ON/OFF current ratio was observed to be >104.

Despite the great promise of immune checkpoint blockade (ICB) therapy for cancer treatment, the currently available options for ICB treatment pose major clinical challenges, including the risk of severe systemic autoimmune responses. Here, we developed a novel localized delivery platform, immuno-bioglue (imuGlue), which is inspired by the intrinsic underwater adhesion properties of marine mussels and can allow the optimal retention of anti-PD-L1 drugs at tumor sites and the on-demand release of drugs in response to the tumor microenvironment. Using a triple-negative breast cancer and melanoma models, we found that imuGlue could significantly enhance anti-tumor efficacy by eliciting a robust T cell-mediated immune response while reducing systemic toxicity by preventing the rapid diffusion of anti-PD-L1 drugs into the systemic circulation and other tissues. It was also demonstrated that imuGlue could be successfully utilized for combination therapy with other immunomodulatory drugs to enhance the anti-tumor efficacy of ICB-based immunotherapy, demonstrating its versatility as a new treatment option for cancer immunotherapy.

Transition metal dichalcogenide (TMDC) materials are in the spotlight as next-generation semiconductor materials because of their advantages over other semiconductor materials. Research on WSe2 among the materials is underway, and the feature of WSe2 has an ambipolar characteristic, and the fermi level change and the doping effect are different according to the electrode type. In the present study, we have fabricated a homogeneous WSe2 PIN junction diode. Our in-plane multilayer WSe2 p-i-n homogeneous diode exhibited photovoltaic properties by asymmetric physical contact doping effect with electric double layer(EDL). Owing to the EDL placed between the cathode and anode, local charge carrier type and density profile are modulated in the same layers. Compared to general diode mode, PIN mode enhance the photo response of the device in our visible measurement range. The diode exhibits excellent rectifying behavior with a current rectification ratio of 104 or higher. Photovoltaic performance of short circuit current and open circuit voltage achieved 3.2 nA, 0.55 V, respectively under the 550 nm green light. And spectrum responsivity is about ~100 mA/W (max point) at 3.2 eV to 1.6 eV. Figure 1

Following surgical resection for primary treatment of solid tumors, systemic chemotherapy is commonly used to eliminate residual cancer cells to prevent tumor recurrence. However, its clinical outcome is often limited due to insufficient local accumulation and the systemic toxicity of anticancer drugs. Here, we propose a sprayable adhesive nanoparticle (NP)-based drug delivery system using a bioengineered mussel adhesive protein (MAP) for effective locoregional cancer therapy. The MAP NPs could be administered to target surfaces in a surface-independent manner through a simple and easy spray process by virtue of their unique adhesion ability and sufficient dispersion property. Doxorubicin (DOX)-loaded MAP NPs (MAP@DOX NPs) exhibited efficient cellular uptake, endolysosomal trafficking, and subsequent low pH microenvironment-induced DOX release in cancer cells. The locally sprayed MAP@DOX NPs showed a significant inhibition of tumor growth in vivo, resulting from the prolonged retention of the MAP@DOX NPs on the tumor surface. Thus, this adhesive MAP NP-based spray therapeutic system provides a promising approach for topical drug delivery in adjuvant cancer therapy.

Perovskite photovoltaic (PV) cell researches have been extensively conducted due to its unprecedentedly excellent power conversion efficiencies (PCEs), which are reported to be over 23.7% in maximum. Despite the high PCEs, there are several unresolved issues on optimal interface states in the cell and device stabilities. Moreover, beyond the simple PV device issues, extended device or circuit applications have rarely been reported although it seems equally important to fully reveal the self-power energy harvesting functions of the perovskite cells to modern ubiquitous environment. Here, we integrate a realistic self-power circuit utilizing a few nm-thin molybdenum ditelluride (MoTe2) field effect transistors (FETs) as well as perovskite PV cells. The PV cells intrinsically show more than 0.9 V of open circuit voltage (VOC) under artificial sun (AM 1.5) or visible photon illumination, so we thus used a red-light emitting diode (LED) to simply generate ~1 V of photovoltage. Two modes for practical operation were consequently observed from the circuit, depending on the light intensity: self-power current/voltage source mode (high intensity) and photosensor mode (low intensity). We now conclude that our self-power circuit approaches integrating perovskite cells and 2D MoTe2 FET could attract much attention for future ubiquitous electronics and energy harvest applications.

Being implemented as an active component in the circuits, two dimensional (2D) transition metal dichalcogenide (TMD) transistors have two kinds of difficulties. First, regardless of carrier type, threshold voltage (Vth) of TMD 2D field effect transistors (FETs) is located far away from 0 V. Second, gate bias induced hysteresis exists in general 2D TMD transistors, causing an unstable operation of FETs. Here, we have fabricated stable n-channel MoSe2 FETs with a relatively small Vth of -5 V and minimized-hysteresis of 0.5 V. And we have checked the stable operation by integrating a smart touch sensor circuit composed of piezoelectric P(VDF-TrFE) polymer, the MoSe2 FET, and organic light emitting diode (OLED). To minimize the Vth and gate voltage hysteresis of 2D FET, we inserted ultrathin (8.46 nm) polystyrene (PS)-brush layer between MoSe2 channel and 50 nm-thin Al2O3 dielectric. Our MoSe₂ FET has showed a maximum drain-current (ID) of ~9 μA at VDS of 1 V along with a high linear mobility of 11.2 cm2/Vs. In the analogue touch sensor circuit gated by piezoelectric film of large scale Al/50 μm-thick P(VDF-TrFE)/ITO/glass, the MoSe₂ FET exhibites high ON/OFF ratio and ON-state ID which quite well demonstrated OLED pixel operation. Figure 1

Recently, 2D transition metal dichalcogenides(TMDs) MoTe2 has shown outstanding properties for future electronic devices. Such TMD structures without surface dangling bonds make the 2D MoTe2 more favorable candidate than conventional 3D Si in a few nanometer scale. The band gap of thin MoTe2 appears close to that of Si and quite smaller than those of other typical TMD semiconductors. Even though there have been a few attempts to control charge carrier polarity of MoTe2, functional devices such as complementary metal–oxide–semiconductor (CMOS) inverter have not been reported. Here we demonstrate a 2D CMOS inverter in a single MoTe2 nanosheet by straightforward selective doping technique. In a single MoTe2 flake, initially p-doped channel was selectively converted to n-doped region with high electron mobility of 18 cm2/Vs by atomic layer deposition-induced H-doping. Our ultrathin CMOS inverter exhibited a high DC voltage gain of 29, AC gain of 18 at 1 kHz, and a low static power consumption of a few nW. Our results show a great potential of MoTe2 for future electronic devices based on 2D semiconducting materials Figure 1