1. Improved ferroelectric properties of CMOS back-end-of-line compatible Hf0.5Zr0.5O2 thin films by introducing dielectric layers
- Author
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Changfan Ju, Binjian Zeng, Ziqi Luo, Zhibin Yang, Puqi Hao, Luocheng Liao, Qijun Yang, Qiangxiang Peng, Shuaizhi Zheng, Yichun Zhou, and Min Liao
- Subjects
Al2O3 ,BEOL processing ,Ferroelectricity ,Hf0.5Zr0.5O2 (HZO) ,Materials of engineering and construction. Mechanics of materials ,TA401-492 - Abstract
Hf0.5Zr0.5O2 (HZO) ferroelectric thin films have gained significant attention for the development of next-generation ferroelectric memories by complementary-metal-oxide semiconductor (CMOS) back-end-of-line (BEOL) processing, due to their relatively low crystallization temperature. However, it remains challenging to achieve excellent ferroelectric properties with post deposition annealing (PDA) process at a BEOL compatible temperature. Along these lines, in this work, it is demonstrated that the ferroelectricity of 15 nm thick HZO thin film prepared by PDA process at 400 °C can be improved to varying degrees, via depositing 2 nm thick dielectric layers of Al2O3, HfO2, or ZrO2 at either the bottom or the top of the film. Notably, the HZO thin film with the top-Al2O3 layer exhibits remarkable ferroelectric properties, which are independent of the thickness of HZO. The 6 nm thick HZO thin film shows a total remanent polarization (2Pr) of 31 μC/cm2 under an operating voltage of 2.5 V. These results represent a significant advancement in the fabrication of high-performance, BEOL compatible ferroelectric memories, as compared to previously reported state-of-the-art works.
- Published
- 2024
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