63 results on '"Yoshitake, Shusuke"'
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2. Impact of EUV absorber variations on wafer patterning
3. Comparative study of extreme ultraviolet absorber materials using lensless actinic imaging
4. Actinic inspection of EUV reticles with arbitrary pattern design
5. RESCAN: an actinic lensless microscope for defect inspection of EUV reticles
6. Theoretical study on relationship between exposure pattern width and chemical gradient of 16 nm half-pitch line-and-space patterns in electron beam lithography used for photomask and nanoimprint mold production
7. A two-step method for fast and reliable EUV mask metrology
8. RESCAN: an actinic lensless microscope for defect inspection of EUV reticles
9. Impact of EUV Absorber Variations on Wafer Patterning.
10. Fundamental study on dissolution behavior of poly(methyl methacrylate) by quartz crystal microbalance
11. Proposal of an extended loading effect correction for EBM-8000
12. EB alignment function for defect mitigation of EUV blank
13. A two-step method for fast and reliable EUV mask metrology
14. RESCAN: an actinic lensless microscope for defect inspection of EUV reticles
15. Enhancement of global CD correction and data processing in EB mask writer EBM-8000
16. EBM-8000: EB mask writer for product mask fabrication of 22nm half-pitch generation and beyond
17. Overlay accuracy of EUV1 using compensation method for nonflatness of mask
18. Controlling linewidth roughness in step and flash imprint lithography
19. Key improvement schemes of accuracies in EB mask writing for double patterning lithography
20. Correction technique of EBM-6000 prepared for EUV mask writing
21. Coping with double-patterning/exposure lithography by EB mask writer EBM-6000
22. The development of full field high resolution imprint templates
23. Key improvement schemes of accuracies in EB mask writing for double patterning lithography.
24. Correction technique of EBM-6000 prepared for EUV mask writing.
25. Coping with double-patterning/exposure lithography by EB mask writer EBM-6000.
26. Particle Contamination Control Technology in Electron Beam Mask Writing System for Next-Generation Mask Fabrication
27. Stage tracking of a mask-scan EB mask writer test stand
28. Writing accuracy of EBM-3500 electron-beam mask writing system
29. Stage tracking of a mask-scan EB mask writer test stand.
30. Eddy current evaluation for a high-resolution EB system
31. Writing accuracy of EBM-3500 electron-beam mask writing system.
32. Optical column of the mask-scan EB mask writer test stand.
33. Optical column of the mask-scan EB mask writer test stand
34. New mask blank handling system for the advanced electron-beam writer
35. Reduction of long range fogging effect in a high acceleration voltage electron beam mask writing system
36. Reduction of fogging effect caused by scattered electrons in an electron beam system
37. New mask blank handling system for the advanced electron-beam writer EX-11
38. Advanced electron-beam writing system EX-11 for next-generation mask fabrication
39. Development of an in-situ cleaning system for an e-beam reticle writer
40. Practical approach to evaluating mask CD uniformity patterned by a variable-shaped beam
41. Pattern shift error induced by coating and developing
42. Pattern positioning error of reticle writing induced by reticle clamping
43. Analysis of pattern shift error for mask clamping measured by Nikon XY-31
44. Reticle flexure influence on pattern positioning accuracy for reticle writing
45. New mask blank handling system for the advanced electron-beam writer EX-11.
46. Development of an in-situ cleaning system for an e-beam reticle writer.
47. Practical approach to evaluating mask CD uniformity patterned by a variable-shaped beam.
48. Pattern shift error induced by coating and developing.
49. Analysis of pattern shift error for mask clamping measured by Nikon XY-31.
50. Actinic inspection of EUV reticles with arbitrary pattern design
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