1. Suppression of Recombination in the Waveguide of a Laser Heterostructure by Means of Double Asymmetric Barriers
- Author
-
F. I. Zubov, Mikhail V. Maximov, Yu. S. Polubavkina, A. E. Zhukov, and N. Yu. Gordeev
- Subjects
010302 applied physics ,Waveguide (electromagnetism) ,Materials science ,business.industry ,Heterojunction ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Laser ,01 natural sciences ,Electron transport chain ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,law.invention ,law ,0103 physical sciences ,Energy spectrum ,Optoelectronics ,Charge carrier ,Transmission coefficient ,0210 nano-technology ,business ,Recombination - Abstract
A semiconductor-laser design is proposed in which parasitic recombination in the waveguide region is suppressed by means of double asymmetric barriers adjacent to the active region. Double asymmetric barriers block the undesirable transport of one type of charge carrier while allowing the transport of the other type of carrier. The spacer in the double asymmetric barrier can serve to compensate the elastic strain introduced by the barrier layers as well as to control the energy spectrum of charge carriers and, thus, the transmission coefficient. By the example of a laser with Al0.2Ga0.8As waveguide layers, it is shown that the design with double asymmetric barriers makes it possible to suppress undesirable electron transport by a factor of 4 in comparison to the design using single asymmetric barriers.
- Published
- 2018