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The wake-up phenomenon widely exists in hafnia-based ferroelectric capacitors, which causes device parameter variation over time. Crystallization at higher temperatures have been reported to be effective in eliminating wake-up, but high temperature may yield the monoclinic phase or generate high concentration oxygen vacancies. In this work, a unidirectional annealing method is proposed for the crystallization of $\mathrm{Hf_{0.5}Zr_{0.5}O_2}$ (HZO) superlattice ferroelectrics, which involves heating from the $\mathrm{Pt/ZrO_2}$ interface side. Nanoscale $\mathrm{ZrO_2}$ is selected to resist the formation of monoclinic phase, and the chemically inert Pt electrode can avoid the continuous generation of oxygen vacancies during annealing. It is demonstrated that $\mathrm{600^oC}$ annealing only leads to a moderate content of monoclinic phase in HZO, and the TiN/HZO/Pt capacitor exhibits wake-up free nature and a $2P_\mathrm{r}$ value of 27.4 $\mu\mathrm{C/cm^2}$. On the other hand, heating from the $\mathrm{TiN/HfO_2}$ side, or using $\mathrm{500^oC}$ annealing temperature, both yield ferroelectric devices that require a wake-up process. The special configuration of $\mathrm{Pt/ZrO_2}$ is verified by comparative studies with several other superlattice structures and HZO solid-state solutions. It is discovered that heating from the $\mathrm{Pt/HfO_2}$ side at $\mathrm{600^oC}$ leads to high leakage current and a memristor behavior. The mechanisms of ferroelectric phase stabilization and memristor formation have been discussed. The unidirectional heating method can also be useful for other hafnia-based ferroelectric devices., Comment: 16 pages, 7 figures

The highly non-linear switching behavior of hafnia memristor actually hinders its wide application in neuromorphic computing. Theoretical understanding into its switching mechanism has been focused on the processes of conductive filament generation and rupture, but possible phase transition and crystallization around the region of conductive filaments (CFs) due to the variation of O content have been paid less attention to. In this paper, HfO$\mathrm{_x}$ structural models covering the full stoichiometries from Hf to HfO$\mathrm{_2}$ were established, and the crystal structure evolution during the reduction process of hafnia was obtained through first-principles calculation. The electronic structures and O vacancy migration characteristics of these structures were analyzed. A criterion was prescribed to predict the mode of abrupt binary switching or gradual conductance modulation according to the structure evolution of the CFs. In particular, factors that influence the merging of tiny conductive channels into strong filaments are intensively discussed, including the anisotropy of O vacancy migration and the size effect. The feasibility of Mg doping to achieve robust gradual switching is discussed., Comment: 33 pages, 18 figures

The Kohn-Sham gaps of density functional theory (DFT) obtained in terms of local density approximation (LDA) or generalized gradient approximation (GGA) cannot be directly linked to the fundamental gaps of semiconductors, but in engineering there is a strong demand to match them through certain rectification methods. Shell DFT-1/2 (shDFT-1/2), as a variant of DFT-1/2, is a potential candidate to yield much improved band gaps for covalent semiconductors, but its accuracy depends on the LDA/GGA ground state, including optimized lattice parameters, basic Kohn-Sham gap before self-energy correction and the amount of self-energy correction that is specific to the exchange-correlation (XC) functional. In this work, we test the LDA/GGA as well as shDFT-1/2 results of six technically important covalent semiconductors Si, Ge, GaN, GaP, GaAs and GaSb, with an additional ionic insulator LiF for comparison. The impact of XC flavor (LDA, PBEsol, PBE and RPBE), either directly on the gap value, or indirectly through the optimized lattice constant, is examined comprehensively. Moreover, we test the impact of XC flavor on LDA/GGA and shDFT-1/2 gaps under the condition of fixed experimental lattice constants. In-depth analysis reveals the rule of reaching the best accuracy in calculating the electronic band structures of typical covalent semiconductors. Relevant parameters like lattice constant, self-consistency in shDFT-1/2 runs, as well as the exchange enhancement factor of GGA, are discussed in details., Comment: 23 pages, 10 figures

Ferroelectricity observed in thin film $\mathrm{HfO_2}$, either doped with Si, Al, etc. or in the $\mathrm{Hf_{0.5}Zr_{0.5}O_2}$ form, has gained great technical significance. However, the soft mode theory faces a difficulty in explaining the origin of such ferroelectricity. In this work, we propose that the 7 cation coordination number of $\mathrm{HfO_2/ZrO_2}$ lies at the heart of this ferroelectricity, which stems from the proper ionic radii of Hf/Zr compared with O. Among the numerous compounds with non-centrosymmetric nature, e.g., $mm2$ point group, $\mathrm{HfO_2}$ and $\mathrm{ZrO_2}$ are special in that they are close to the border of 7 and 8 cation coordination, such that the 8-coordination tetragonal intermediate phase could greatly reduce the switching barrier. Other 7-coordination candidates, including $\mathrm{SrI_2}$, TaON, YSBr and YOF are also studied in comparison to $\mathrm{HfO_2}$/$\mathrm{ZrO_2}$, and six switching paths are analyzed in detail for the $Pca2_1$ phase. A rule of preferred switching path in terms of ionic radii ratio and coordination number has been established. We also show the possible route from ferroelectric $Pca2_1$ phase to monoclinic $P2_1/c$ phase in $\mathrm{HfO_2}$, which is relevant to the fatigue phenomenon., Comment: 14 pages, 4 figures

Searching for novel two-dimensional (2D) materials is highly desired in the field of nanoelectronics. We here propose a new 2D crystal barium tri-arsenide ($\mathrm{BaAs_3}$) with a series of encouraging functionalities. Being kinetically and thermally stable, the monolayer and bilayer forms of $\mathrm{BaAs_3}$ possess narrow indirect band gaps of 0.87 eV and 0.40 eV, respectively, with high hole mobilities on the order of ~$\mathrm{10^3\ cm^{2}\,V^{-1}\,s^{-1}}$. The electronic properties of 2D $\mathrm{BaAs_3}$ can be manipulated by controlling the layer thickness. The favorable cleavage energy reveals that layered $\mathrm{BaAs_3}$ can be produced as a freestanding 2D material. Furthermore, by introducing vacancy defects monolayer $\mathrm{BaAs_3}$ can be transformed from a semiconductor to a metal. 2D $\mathrm{BaAs_3}$ may find promising applications in nanoelectronic devices., Comment: 22 pages, 4 figures; Supporting Information contains 10 pages and 12 figures

We suggest a tetragonal $I4_1/amd$ phase ($\eta$-phase) as the ground state of $\mathrm{Ta_2O_5}$ at zero temperature, which is a high symmetry version of the triclinic $\gamma$-phase $\mathrm{Ta_2O_5}$ predicted by Yang and Kawazoe. Our calculation shows that $\gamma$-phase $\mathrm{Ta_2O_5}$ will automatically be transformed into the $\eta$-phase during structural relaxation. Phonon dispersion confirms that the $\eta$-phase is dynamically stable, while the high temperature $\alpha$-phase $\mathrm{Ta_2O_5}$, which also has the $I4_1/amd$ symmetry, is unstable at zero temperature. A thorough energy comparison of the $\beta_{AL}$, $\delta$, $\lambda$, $\mathrm{B}$, $\mathrm{L_{SR}}$, $\beta_R$, $Pm$, $Cmmm$, $\gamma$, $\eta$ and $\alpha$ phases of $\mathrm{Ta_2O_5}$ is carried out. The GGA-1/2 method is applied in calculating the electronic structure of various phases, where the $\eta$-phase demonstrates a 4.24 eV indirect band gap, close to experimental value. The high symmetry tetragonal phase together with computationally efficient GGA-1/2 method greatly facilitate the $ab\ initio$ simulation of $\mathrm{Ta_2O_5}$-based devices. As an example, we have explicitly shown the Ohmic contact nature between metal Ta and $\mathrm{Ta_2O_5}$ by calculating an interface model of $b.c.c.$ Ta and $\eta$-$\mathrm{Ta_2O_5}$, using GGA-1/2., Comment: 27 pages, 8 figures

Searching for materials with single atom-thin as well as planar structure, like graphene and borophene, is one of the most attractive themes in two dimensional materials. Herein, using density functional theory calculations, we have proposed a series of single layer planar penta-transition metal phosphide and arsenide, i.e. TM$\mathrm{_2}$X$\mathrm{_4}$ (TM= Ni, Pd and Pt; X=P, As). According to the calculated phonon dispersion relation and elastic constants, as well as ab initio molecular dynamics simulation results, monolayers of planar penta-TM$\mathrm{_2}$X$\mathrm{_4}$ are dynamically, mechanically, and thermally stable. In addition, the band structures calculated with the screened HSE06 hybrid functional including spin-orbit coupling show that these monolayers are direct-gap semiconductors with sizeable band gaps ranging from 0.14 eV to 0.69 eV. Besides, the optical properties in these monolayers are further investigated, where strong in-plane optical absorption with wide spectral range has been revealed. Our results indicate that planar penta-TM$\mathrm{_2}$X$\mathrm{_4}$ monolayers are interesting narrow gap semiconductors with excellent optical properties, and may find potential applications in photoelectronics., Comment: 6 figures, with Supporting Information

Highly-efficient water splitting based on solar energy is one of the most attractive research focuses in the energy field. Searching for more candidate photocatalysts that can work under visible-light irradiation are highly demanded. Herein, using first principle calculations based on density functional theory, we predict that the two dimensional silicon chalcogenides, i.e. SiX (X=S, Se, Te) monolayers, as semiconductors with 2.43 eV~3.00 eV band gaps, exhibit favorable band edge positions for photocatalytic water splitting. The optical adsorption spectra demonstrate that the SiX monolayers have pronounced optical absorption in the visible light region. Moreover, the band gaps and band edge positions of silicon chalcogenides monolayers can be tuned by applying biaxial strain or increasing the number of layers, in order to better fit the redox potentials of water. The combined novel electronic, high carrier mobility, and optical properties render the two dimensional SiX a promising photocatalyst for water splitting., Comment: 5 figures, 2 tables

Two-dimensional materials with a proper band gap and high carrier mobility are urgently desired in the field of nanoelectronics. We propose a novel two-dimensional crystal monolayer $\mathrm{TlP_5}$, which is dynamically and thermodynamically stable and possesses a direct band gap of 2.02 eV with high carrier mobilities (13960 $\mathrm{cm^2\ V^{-1}s^{-1}}$ for electrons and 7560 $\mathrm{cm^2\ V^{-1}s^{-1}}$ for holes), comparable to that of phosphorene. The band gap value and band characteristics of monolayer $\mathrm{TlP_5}$ can be adjusted by biaxial and uniaxial strains, and excellent optical absorption over the visible-light range is predicted. These properties, especially for the balanced high mobilities for not only the electrons but also the holes, render monolayer $\mathrm{TlP_5}$ an exciting functional material for future nanoelectronics and optoelectronic applications., Comment: 5 figures, 1 table

Two-dimensional (2D) materials with high carrier mobility and tunable magnetism are in high demand for nanoelectronics and spintronic applications. Herein, we predict a novel two-dimensional monolayer KTlO that possesses an indirect band gap of 2.25 eV (based on HSE06) and high carrier mobility (1860 $\mathrm{cm^2\ V^{-1}s^{-1}}$ for electron and 2540 $\mathrm{cm^2\ V^{-1}s^{-1}}$ for hole) by means of ab initio calculations. KTlO monolayer has a calculated cleavage energy of 0.56 $\mathrm{J\ m^{-2}}$, which suggests exfoliation of bulk material as viable means for the preparation of mono- and few-layer materials. Remarkably, the KTlO monolayer suggests tunable magnetism and half-metallicity with hole doping, which are attributed to the novel Mexican-hat-like bands and van Hove singularities in its electron structure. Furthermore, monolayer KTlO exhibits moderate optical absorption over visible light and ultraviolet region. The band gap value and band characteristics of monolayer KTlO can be strongly manipulated by biaxial and uniaxial strains to meet the requirements of various applications. All these novel properties render monolayer KTlO a promising functional material for future nanoelectronics and spintronic applications., Comment: Main text including 19 pages, 6 figures

The LDA-1/2 method for self-energy correction is a powerful tool for calculating accurate band structures of semiconductors, while keeping the computational load as low as standard LDA. Nevertheless, controversies remain regarding the arbitrariness of choice between (1/2)e and (1/4)e charge stripping from the atoms in group IV semiconductors, the incorrect direct band gap predicted for Ge, and inaccurate band structures for III-V semiconductors. Here we propose an improved method named shell-LDA-1/2 (shLDA-1/2 for short), which is based on a shell-like trimming function for the self-energy potential. With the new approach, we obtained accurate band structures for group IV, and for III-V and II-VI compound semiconductors. In particular, we reproduced the complete band structure of Ge in good agreement with experimental data. Moreover, we have defined clear rules for choosing when (1/2)e or (1/4)e charge ought to be stripped in covalent semiconductors, and for identifying materials for which shLDA-1/2 is expected to fail., Comment: 15 pages, 4 figures, 1 table