140 results on '"Zheng, Yingkui"'
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2. Gate trench dry etching technology with damage blocking layer for GaN HEMT devices
3. Insight into the suppression mechanism of bulk traps in Al2O3 gate dielectric and its effect on threshold voltage instability in Al2O3/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors
4. Effective suppression of deep interface states and dielectric trapping in SiNx/GaN metal-insulator-semiconductor structures by a SiOxNy interfacial layer grown by plasma-enhanced atomic layer deposition
5. Fast Recovery Performance and Design Method for High-Power Microwave Limiter Using GaN-SBD Technology
6. Suppression and characterization of interface states at low-pressure-chemical-vapor-deposited SiNx/III-nitride heterostructures
7. 0.18 dB Low-Noise Figure at 10 GHz for GaN MIS-HEMT With Plasma-Enhanced Atomic Layer Deposition SiN Layer
8. Effective Suppression of Amorphous Ga2O and Related Deep Levels on the GaN Surface by High-Temperature Remote Plasma Pretreatments in GaN-Based Metal–Insulator–Semiconductor Electronic Devices
9. Optimization of Ohmic Contact to Ultrathin-Barrier AlGaN/GaN Heterostructure via an ‘Ohmic-Before-Passivation’ Process
10. Origin of Soft Breakdown in Thin-Barrier AlGaN/GaN SBD With C-Doped GaN Buffer
11. High-Power GaN SBD Limiter for Sub-6G With Fast Response and Recovery
12. Suppression of Bulk Traps in Al2o3 Gate Dielectric and its Effect on Threshold Voltage Instability in Al2o3/Algan/Gan Metal-Oxide-Semiconductor High Electron Mobility Transistors
13. Improved Stability of GaN MIS-HEMT With 5-nm Plasma-Enhanced Atomic Layer Deposition SiN Gate Dielectric
14. Optimization of recess-free AlGaN/GaN Schottky barrier diode by TiN anode and current transport mechanism analysis
15. Capture and emission mechanisms of defect states at interface between nitride semiconductor and gate oxides in GaN-based metal-oxide-semiconductor power transistors.
16. Effective Suppression of Amorphous Ga2O and Related Deep Levels on the GaN Surface by High-Temperature Remote Plasma Pretreatments in GaN-Based Metal–Insulator–Semiconductor Electronic Devices.
17. Investigation on Capacitance Collapse Induced by Secondary Capture of Acceptor Traps in AlGaN/GaN Lateral Schottky Barrier Diode
18. Thermal analysis of AlGaN/GaN high-electron-mobility transistors by infrared microscopy
19. Identification of Semi-ON-State Current Collapse in AlGaN/GaN HEMTs by Drain Current Deep Level Transient Spectroscopy
20. High-Power Microwave Limiters Using Recess-Free AlGaN/GaN Schottky Barrier Diodes
21. Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode
22. 7.05 W/mm Power Density Millimeter-Wave GaN MIS-HEMT With Plasma Enhanced Atomic Layer Deposition SiN Dielectric Layer
23. Impact of V th Instability on Time-Resolved Characteristics of MIS-HEMT-Based GaN Power IC
24. A C-band GaN based linear power amplifier with 55.7% PAE
25. Thin-barrier gated-edge termination AlGaN/GaN Schottky barrier diode with low reverse leakage and high turn-on uniformity
26. Optimization of Oxygen Plasma Treatment on Ohmic Contact for AlGaN/GaN HEMTs on High-Resistivity Si Substrate
27. Monolithic Integrated Normally OFF GaN Power Device With Antiparallel Lateral Schottky Barrier Controlled Schottky Rectifier
28. Low Leakage and High Forward Current Density Quasi-Vertical GaN Schottky Barrier Diode With Post-Mesa Nitridation
29. Suppression and characterization of interface states at low-pressure-chemical-vapor-deposited SiN /III-nitride heterostructures
30. X-band AlGaN/GaN HEMTs with high microwave power performance
31. First Demonstration of L-Band High-Power Limiter with GaN Schottky Barrier Diodes (SBDs) Based on Steep-Mesa Technology
32. Partially Crystallized Ultrathin Interfaces between GaN and SiNx Grown by Low-Pressure Chemical Vapor Deposition and Interface Editing
33. Analysis of reverse leakage mechanism in recess-free thin-barrier AlGaN/GaN Schottky barrier diode
34. High-power and broadband microwave detection with a quasi-vertical GaN Schottky barrier diode by novel post-mesa nitridation
35. Interface Charge Effects on 2-D Electron Gas in Vertical-Scaled Ultrathin-Barrier AlGaN/GaN Heterostructure
36. Suppression of Gate Leakage Current in Ka-Band AlGaN/GaN HEMT With 5-nm SiN Gate Dielectric Grown by Plasma-Enhanced ALD
37. Millimeter-Wave AlGaN/GaN HEMTs With 43.6% Power-Added-Efficiency at 40 GHz Fabricated by Atomic Layer Etching Gate Recess
38. Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics
39. Review of the recent progress on GaN-based vertical power Schottky barrier diodes (SBDs)
40. Effects of Fluorine Plasma Treatment on Au-Free Ohmic Contacts to Ultrathin-Barrier AlGaN/GaN Heterostructure
41. Review of the Recent Progress on GaN-Based Vertical Power Schottky Barrier Diodes (SBDs)
42. Revealing the Positive Bias Temperature Instability in Normally-OFF AlGaN/GaN MIS-HFETs by Constant-Capacitance DLTS
43. Partially Crystallized Ultrathin Interfaces between GaN and SiNx Grown by Low-Pressure Chemical Vapor Deposition and Interface Editing.
44. Effects of interface oxidation on the transport behavior of the two-dimensional-electron-gas in AlGaN/GaN heterostructures by plasma-enhanced-atomic-layer-deposited AlN passivation.
45. Insight into the Near-Conduction Band States at the Crystallized Interface between GaN and SiNxGrown by Low-Pressure Chemical Vapor Deposition
46. Ultralow-Contact-Resistance Au-Free Ohmic Contacts With Low Annealing Temperature on AlGaN/GaN Heterostructures
47. Recess-free AlGaN/GaN lateral Schottky barrier controlled Schottky rectifier with low turn-on voltage and high reverse blocking
48. High-Temperature-Recessed Millimeter-Wave AlGaN/GaN HEMTs With 42.8% Power-Added-Efficiency at 35 GHz
49. Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices
50. Thermal analysis of AlGaN/GaN high-electron-mobility transistors by infrared microscopy
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