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In this paper, we present the vertical magnetoresistive random access memory (VMRAM) design based on micromagnetic simulation analysis. The design utilizes the vertical giant magnetoresistive effect of the magnetic multilayer. By making the memory element into a ring-shaped magnetic multilayer stack with orthogonal paired word lines, magnetic switching of the memory device becomes very robust. The design also adopts the readback scheme in pseudo spin valve MRAM so that only one transistor is needed for each bit line which can connect hundreds of memory elements, yielding a very high area density. It is estimated that the ultimate area density for the VMRAM is 400 Gbits/in.2. It is suggested that this memory design has the potential to not only replace the present semiconductor memory devices, such as FLASH, but also the potential to replace DRAM, SRAM, and even disk drives. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Presents a study on the micromagnetics of exchange biased Permalloy films. Use of combined magnetic force microscopy and micromagnetic modeling simulation; Lithographical patterning of bilayer films.

Investigates the effect of crystalline orientation and grain size on the switching behavior for patterned face-centered-cubic cobalt film elements. Correlation between film microstructure and magnetic switching properties; Model and energy analysis; Results and discussion.

Presents a micromagnetic study of magnetic switching properties on submicron scale single layer and multilayer thin film elements. Description of model and computation used; Co single layer film elements.

Presents a micromagnetic study of synthetic antiferromagnet (SAF) biased spin valve heads. Stabilization of the SAF biased spin valve heads; Details on the micromagnetic model used in the study; Results and discussions.

Focuses on a study which analyzed the spin valve memory element biased with a pair of antiparallel (AP) coupled ferromagnetic layer and modeled via micromagnetic simulation. Effects of submicrometer scale conventional spin valve memory element; Information on AP structure with two identical ferromagnetic layers under a uniform magnetic field; Development of a micromagnetic model using Landau-Lifshitz-Gilbert equations.

Presents the micromagnetic modeling of submicron size pseudo spin valve memory elements. Most critical aspects in magnetic-random access memory (MRAM) design; Operation scheme of pseudo spin valve structure MRAM; Results and discussion; Conclusion.

Presents a systematic micromagnetic analysis on spin valves giant magnetoresistive memory elements. Hysteresis loop for a 1.0 mum x 0.5 mum simple structure memory cell; Magnetization configurations of the pinned layer and the free layer; Effect of element width with same aspect ratio.