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48 results on '"Zheng, Zhenyi"'

1. Effective electrical manipulation of topological antiferromagnet by orbital Hall effect

Author

Zheng, Zhenyi, Zeng, Tao, Zhao, Tieyang, Shi, Shu, Ren, Lizhu, Zhang, Tongtong, Jia, Lanxin, Gu, Youdi, Xiao, Rui, Zhou, Hengan, Zhang, Qihan, Lu, Jiaqi, Wang, Guilei, Zhao, Chao, Li, Huihui, Tay, Beng Kang, and Chen, Jingsheng

Subjects
Condensed Matter - Materials Science, Physics - Applied Physics
Abstract

Electrical control of the non-trivial topology in Weyl antiferromagnet is of great interests to develop next-generation spintronic devices. Recent works suggest that spin Hall effect can switch the topological antiferromagnetic order. However, the switching efficiency remains relatively low. Here, we demonstrate effective manipulation of antiferromagnetic order in Weyl semimetal Mn3Sn by orbital Hall effect originated from metal Mn or oxide CuOx. While Mn3Sn is proven to be able to convert orbit current to spin current by itself, we find that inserting a heavy metal layer like Pt with proper thickness can effectively reduce the critical switching current density by one order of magnitude. In addition, we show that the memristor-like switching behavior of Mn3Sn can mimic the potentiation and depression processes of a synapse with high linearity, which is beneficial for constructing artificial neural network with high accuracy. Our work paves an alternative way to manipulate topological antiferromagnetic order and may inspire more high-performance antiferromagnetic functional devices., Comment: 13 pages, 4 figures

Published
2023

2. Field-free spin-orbit torque-induced switching of perpendicular magnetization in a ferrimagnetic layer with vertical composition gradient

Author

Zheng, Zhenyi, Zhang, Yue, Lopez-Dominguez, Victor, Sánchez-Tejerina, Luis, Shi, Jiacheng, Feng, Xueqiang, Chen, Lei, Wang, Zilu, Zhang, Zhizhong, Zhang, Kun, Hong, Bin, Xu, Yong, Zhang, Youguang, Carpentieri, Mario, Fert, Albert, Finocchio, Giovanni, Zhao, Weisheng, and Amiri, Pedram Khalili

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

Current-induced spin-orbit torques (SOTs) are of interest for fast and energy-efficient manipulation of magnetic order in spintronic devices. To be deterministic, however, switching of perpendicularly magnetized materials by SOT requires a mechanism for in-plane symmetry breaking. Existing methods to do so involve the application of an in-plane bias magnetic field, or incorporation of in-plane structural asymmetry in the device, both of which can be difficult to implement in practical applications. Here, we reported bias-field-free SOT switching in a single perpendicular CoTb layer with an engineered vertical composition gradient. The vertical structural inversion asymmetry induces strong intrinsic SOTs and a gradient-driven Dzyaloshinskii-Moriya interaction (g-DMI), which breaks the in-plane symmetry during the switching process. Micromagnetic simulations are in agreement with experimental results, and elucidate the role of g-DMI in the deterministic switching. This bias-field-free switching scheme for perpendicular ferrimagnets with g-DMI provides a strategy for efficient and compact SOT device design., Comment: 27 pages, 5 figures

Published
2021
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3. Ultra-Fast Ferrimagnetic All Spin Logic Device

Author

Zhang, Yue, Zhang, Zhizhong, Zheng, Zhenyi, Nan, Jiang, Wang, Guanda, Zhang, Kun, Wang, Yu, Yun, Wei, Zhang, Youguang, and Zhao, Weisheng

Subjects
Physics - Applied Physics
Abstract

All spin logic device (ASLD) blazes an alternative path for realizing ultra-low power computing in the Post-Moore era. However, initial device structure relying on ferromagnetic input/output and spin transfer torque (STT) driven magnetization switching degrades its performance and even hinders its realization. In this paper, we propose an ASLD based on rare-earth (RE)-transition-metal (TM) ferromagnetic alloy that can achieve an ultra-high frequency up to terahertz. The spin orbit torque (SOT) induced fast precession near the spin angular momentum compensated point is investigated through the macrospin model. Combining the non-local spin current diffusing from the input to the output, a deterministic picosecond switching can be realized without any external magnetic field. Our results show that ASLD has the potential to exceed the performance of mainstream computing.

Published
2018

4. Effective electrical manipulation of a topological antiferromagnet by orbital torques

Author

Zheng, Zhenyi, primary, Zeng, Tao, additional, Zhao, Tieyang, additional, Shi, Shu, additional, Ren, Lizhu, additional, Zhang, Tongtong, additional, Jia, Lanxin, additional, Gu, Youdi, additional, Xiao, Rui, additional, Zhou, Hengan, additional, Zhang, Qihan, additional, Lu, Jiaqi, additional, Wang, Guilei, additional, Zhao, Chao, additional, Li, Huihui, additional, Tay, Beng Kang, additional, and Chen, Jingsheng, additional

Published
2024
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5. Ferroelectric Control of Spin‐Orbitronics.

Author

Gu, Youdi, Zheng, Zhenyi, Jia, Lanxin, Shi, Shu, Zhao, Tieyang, Zeng, Tao, Zhang, Qihan, Zhu, Yao, Wang, Han, and Chen, Jingsheng

Abstract

Spin‐orbit coupling refers to the relativistic interaction between the spin and orbital motions of electrons. This interaction leads to numerous intriguing phenomena, including spin‐orbit torques, spin–momentum locking, topological spin textures, etc., that have recently gained prominence in the field of spin‐orbitronics. In particular, the emerging ferroelectric control is recognized and validated as an effective means to enhance energy efficiency across a broad spectrum of spin‐orbitronic devices. Here, cutting‐edge research on ferroelectric control of spin‐orbitronics (FECSO) by means of spontaneous polarization, reversible ferroelectric switching, and multiferroic coupling, are comprehensively reviewed. Two fascinating topics are mainly discussed: topological spin texture and spin‐charge interconversion. The classification of control mechanisms for different interactions in FECSO is summarized first. Then, from the perspective of material classification, the ferroelectric‐controlled spin‐orbit coupling with tunable topological spin texture in oxide systems, magnetic metal multilayers, and 2D van der Waals materials is reviewed. Subsequently, the ferroelectric‐tunable spin‐charge interconversion on heavy metal layers, oxide interfaces, and ferroelectric Rashba semiconductors is highlighted. In the end, the challenges and forthcoming prospects of FECSO are discussed. This work may provide pertinent and forward‐thinking guidance to accelerate the ongoing advancement of this field. [ABSTRACT FROM AUTHOR]

Published
2024
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10. Highly Energy-Efficient Spin Current Generation in SrIrO3by Manipulating the Octahedral Rotation

Author

Zhang, Qihan, Shi, Shu, Zheng, Zhenyi, Zhou, Hengan, Shao, Ding-Fu, Zhao, Tieyang, Su, Hanxin, Liu, Liang, Shu, Xinyu, Jia, Lanxin, Gu, Youdi, Xiao, Rui, Wang, Guilei, Zhao, Chao, Li, Huihui, and Chen, Jingsheng

Abstract

Materials with strong spin–orbit coupling (SOC) have been continuously attracting intensive attention due to their promising application in energy-efficient, high-density, and nonvolatile spintronic devices. Particularly, transition-metal perovskite oxides with strong SOC have been demonstrated to exhibit efficient charge–spin interconversion. In this study, we systematically investigated the impact of epitaxial strain on the spin–orbit torque (SOT) efficiency in the SrIrO3(SIO)/Ni81Fe19(Py) bilayer. The results reveal that the SOT efficiency is strongly related to the octahedral rotation around the in-plane axes of the single-crystal SIO. By modulating the epitaxial strain using different substrates, the SOT efficiency can be remarkably improved from 0.15 to 1.45. This 10-fold enhancement of SOT efficiency suggests that modulating the epitaxial strain is an efficient approach to control the SOT efficiency in complex oxide-based heterostructures. Our work may have the potential to advance the application of complex oxides in energy-efficient spintronic devices.

Published
2024
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12. Ferrimagnets for spintronic devices: From materials to applications

Author

Zhang, Yue, primary, Feng, Xueqiang, additional, Zheng, Zhenyi, additional, Zhang, Zhizhong, additional, Lin, Kelian, additional, Sun, Xiaohan, additional, Wang, Guanda, additional, Wang, Jinkai, additional, Wei, Jiaqi, additional, Vallobra, Pierre, additional, He, Yu, additional, Wang, Zixi, additional, Chen, Lei, additional, Zhang, Kun, additional, Xu, Yong, additional, and Zhao, Weisheng, additional

Published
2023
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17. Symmetry breaking for current-induced magnetization switching.

Author

Liu, Liang, Zhao, Tieyang, Lin, Weinan, Shu, Xinyu, Zhou, Jing, Zheng, Zhenyi, Chen, Hongliang, Jia, Lanxin, and Chen, Jingsheng

Subjects
SYMMETRY breaking, MAGNETIZATION, MAGNETIC control, MIRROR symmetry, MAGNETIC fields, SPIN-orbit interactions
Abstract

Electromagnetic phenomena, such as magnetization switching, are guided by parity and time-reversal symmetries. Magnetic field and magnetization are time-odd axial vectors. Therefore, the magnetic field can switch magnetization reversibly. In contrast, the electric field is a time-even polar vector that cannot directly switch magnetization. For magnetic recording, an electrical coil-generated local magnetic field is used to switch the magnetic bit. However, in order to integrate the magnetic functionality, e.g., nonvolatile magnetic memory with high speed and low energy consumption, into the chip, it is essential to implement the magnetization switching by an electrical current, where the current induces other axial vectors through spin-transfer torque or spin–orbit torque (SOT). As an energy-efficient tool of magnetization switching, current-induced SOT has been intensively studied for the past decade, which holds great promise in the next generation of magnetic memories and magnetic logic devices [A. Manchon et al., Rev. Mod. Phys. 91, 035004 (2019); X. Han et al., Appl. Phys. Lett. 118, 120502 (2021); C. Song et al., Prog. Mater. Sci. 118, 100761 (2021); Q. Shao et al., IEEE Trans. Magn. 57, 21076639 (2021); J. Ryu et al., Adv. Mater. 32, 1907148 (2020); Y. Cao et al., iScience 23, 101614 (2020)]. In this review, we will first give the basic principle of the symmetry considerations for current-induced magnetization switching. Then, different methods to break the mirror symmetry for deterministic SOT switching will be discussed, together with examples that contain recent progress. In the end, we will give a discussion on the challenges and perspectives of the symmetry designs for SOT, which aim to inspire future fundamental studies and device applications. [ABSTRACT FROM AUTHOR]

Published
2023
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20. Efficient and controllable magnetization switching induced by intermixing-enhanced bulk spin–orbit torque in ferromagnetic multilayers

Author

Zhang, Kun, primary, Chen, Lei, additional, Zhang, Yue, additional, Hong, Bin, additional, He, Yu, additional, Lin, Kelian, additional, Zhang, Zhizhong, additional, Zheng, Zhenyi, additional, Feng, Xueqiang, additional, Zhang, Youguang, additional, Otani, Yoshichika, additional, and Zhao, Weisheng, additional

Published
2022
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22. Field-free spin-orbit torque-induced switching of perpendicular magnetization in a ferrimagnetic layer with a vertical composition gradient

Author

Zheng, Zhenyi, primary, Zhang, Yue, additional, Lopez-Dominguez, Victor, additional, Sánchez-Tejerina, Luis, additional, Shi, Jiacheng, additional, Feng, Xueqiang, additional, Chen, Lei, additional, Wang, Zilu, additional, Zhang, Zhizhong, additional, Zhang, Kun, additional, Hong, Bin, additional, Xu, Yong, additional, Zhang, Youguang, additional, Carpentieri, Mario, additional, Fert, Albert, additional, Finocchio, Giovanni, additional, Zhao, Weisheng, additional, and Khalili Amiri, Pedram, additional

Published
2021
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25. 3D Ferrimagnetic Device for Multi-Bit Storage and Efficient In-Memory Computing

Author

Zhang, Zhizhong, primary, Zheng, Zhenyi, additional, Zhang, Yue, additional, Sun, Jinyi, additional, Lin, Kelian, additional, Zhang, Kun, additional, Feng, Xueqiang, additional, Chen, Lei, additional, Wang, Jinkai, additional, Wang, Guanda, additional, Du, Yinchang, additional, Zhang, Youguang, additional, Bournel, Arnaud, additional, Amiri, Pedram Khalili, additional, and Zhao, Weisheng, additional

Published
2021
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26. Large-Scale Direct Shear Test on Tire Slice Reinforced Crushed Concrete Particles

Author

Lihua Li, Hang Shu, Zheng Zhenyi, Jia Mou, and Qiang Ma

Subjects
Materials science, Article Subject, 0211 other engineering and technologies, General Engineering, Vertical load, 02 engineering and technology, Shear rate, Shear (geology), 021105 building & construction, TA401-492, Shear stress, Cohesion (geology), General Materials Science, Wafer, Direct shear test, Composite material, Reinforcement, Materials of engineering and construction. Mechanics of materials, 021101 geological & geomatics engineering
Abstract

In order to study the mechanical properties of tire slices reinforced crushed concrete particles, a series of shear tests were carried out under the conditions of different vertical loads, different tire volume contents, and different shear rates. The test results show that the addition of tire slices can increase the internal friction angle and cohesion of concrete particles, therefore increase the shear strength of crushed concrete particles. The peak shear stress increases with the increase of vertical load. However, with the increase of the tire volume content, the reinforcement effect of the tire slices first increases and then decreases, and the effect is best when the tire volume content is 4%. Under the vertical load of 60 kPa, the reinforcement effect of 4% tire volume content is the best, and the peak shear stress increases by 46.53%. Additionally, the shear rate has a little effect on the peak shear stress. The larger the shear rate is, the smaller the shear displacement is and the faster the shear strength decreases. The smaller the shear rate is, the more gently the shear strength decreases.

Published
2020
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30. Rectified Tunnel Magnetoresistance Device With High On/Off Ratio for In-Memory Computing

Author

Zhang, Kun, primary, Cao, Kaihua, additional, Zhang, Yue, additional, Huang, Zhe, additional, Cai, Wenlong, additional, Wang, Jinkai, additional, Nan, Jiang, additional, Wang, Guanda, additional, Zheng, Zhenyi, additional, Chen, Lei, additional, Zhang, Zhizhong, additional, Zhang, Youguang, additional, Yan, Shishen, additional, and Zhao, Weisheng, additional

Published
2020
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35. Efficient Magnetic Domain Nucleation and Domain Wall Motion With Voltage Control Magnetic Anisotropy Effect and Antiferromagnetic/Ferromagnetic Coupling

Author

Nan, Jiang, primary, Zhang, Yue, additional, Zhang, Zhizhong, additional, Zhang, Kun, additional, Zheng, Zhenyi, additional, Wang, Guanda, additional, Zhang, Xueying, additional, Klein, Jacques-Olivier, additional, Ravelosona, Dafine, additional, Zhang, Youguang, additional, and Zhao, Weisheng, additional

Published
2019
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39. Perpendicular magnetization switching by large spin–orbit torques from sputtered Bi2Te3.

Author

Zheng, Zhenyi, Zhang, Yue, Zhu, Daoqian, Zhang, Kun, Feng, Xueqiang, He, Yu, Chen, Lei, Zhang, Zhizhong, Liu, Dijun, Zhang, Youguang, Amiri, Pedram Khalili, and Zhao, Weisheng

Subjects
*SPIN-orbit interactions, *PERPENDICULAR magnetic anisotropy, *MOLECULAR beam epitaxy, *MAGNETIZATION, *TOPOLOGICAL insulators, *MAGNETRON sputtering, *MORE O'Ferrall-Jencks diagrams
Abstract

Spin–orbit torque (SOT) effect is considered as an efficient way to switch the magnetization and can inspire various high-performance spintronic devices. Recently, topological insulators (TIs) have gained extensive attention, as they are demonstrated to maintain a large effective spin Hall angle (), even at room temperature. However, molecular beam epitaxy (MBE), as a precise deposition method, is required to guarantee favorable surface states of TIs, which hinders the prospect of TIs towards industrial application. In this paper, we demonstrate that Bi2Te3 films grown by magnetron sputtering can provide a notable SOT effect in the heterostructure with perpendicular magnetic anisotropy CoTb ferrimagnetic alloy. By harmonic Hall measurement, a high SOT efficiency (8.7 ± 0.9 Oe/(109 A/m2)) and a large (3.3±0.3) are obtained at room temperature. Besides, we also observe an ultra-low critical switching current density (9.7×109 A/m2). Moreover, the low-power characteristic of the sputtered Bi2Te3 film is investigated by drawing a comparison with different sputtered SOT sources. Our work may provide an alternative to leverage chalcogenides as a realistic and efficient SOT source in future spintronic devices. [ABSTRACT FROM AUTHOR]

Published
2020
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40. Perpendicular magnetization switching by large spin–orbit torques from sputtered Bi2Te3.

Author

Zheng, Zhenyi, Zhang, Yue, Zhu, Daoqian, Zhang, Kun, Feng, Xueqiang, He, Yu, Chen, Lei, Zhang, Zhizhong, Liu, Dijun, Zhang, Youguang, Amiri, Pedram Khalili, and Zhao, Weisheng

Subjects
SPIN-orbit interactions, PERPENDICULAR magnetic anisotropy, MOLECULAR beam epitaxy, MAGNETIZATION, TOPOLOGICAL insulators, MAGNETRON sputtering, MORE O'Ferrall-Jencks diagrams
Abstract

Spin–orbit torque (SOT) effect is considered as an efficient way to switch the magnetization and can inspire various high-performance spintronic devices. Recently, topological insulators (TIs) have gained extensive attention, as they are demonstrated to maintain a large effective spin Hall angle (), even at room temperature. However, molecular beam epitaxy (MBE), as a precise deposition method, is required to guarantee favorable surface states of TIs, which hinders the prospect of TIs towards industrial application. In this paper, we demonstrate that Bi2Te3 films grown by magnetron sputtering can provide a notable SOT effect in the heterostructure with perpendicular magnetic anisotropy CoTb ferrimagnetic alloy. By harmonic Hall measurement, a high SOT efficiency (8.7 ± 0.9 Oe/(109 A/m2)) and a large (3.3±0.3) are obtained at room temperature. Besides, we also observe an ultra-low critical switching current density (9.7×109 A/m2). Moreover, the low-power characteristic of the sputtered Bi2Te3 film is investigated by drawing a comparison with different sputtered SOT sources. Our work may provide an alternative to leverage chalcogenides as a realistic and efficient SOT source in future spintronic devices. [ABSTRACT FROM AUTHOR]

Published
2020
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44. Partial spin absorption induced magnetization switching and its voltage-assisted improvement in an asymmetrical all spin logic device at the mesoscopic scale

Author

Zhang, Yue, primary, Zhang, Zhizhong, additional, Wang, Lezhi, additional, Nan, Jiang, additional, Zheng, Zhenyi, additional, Li, Xiang, additional, Wong, Kin, additional, Wang, Yu, additional, Klein, Jacques-Olivier, additional, Khalili Amiri, Pedram, additional, Zhang, Youguang, additional, Wang, Kang L., additional, and Zhao, Weisheng, additional

Published
2017
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48. Highly Energy-Efficient Spin Current Generation in SrIrO 3 by Manipulating the Octahedral Rotation.

Author

Zhang Q, Shi S, Zheng Z, Zhou H, Shao DF, Zhao T, Su H, Liu L, Shu X, Jia L, Gu Y, Xiao R, Wang G, Zhao C, Li H, and Chen J

Abstract

Materials with strong spin-orbit coupling (SOC) have been continuously attracting intensive attention due to their promising application in energy-efficient, high-density, and nonvolatile spintronic devices. Particularly, transition-metal perovskite oxides with strong SOC have been demonstrated to exhibit efficient charge-spin interconversion. In this study, we systematically investigated the impact of epitaxial strain on the spin-orbit torque (SOT) efficiency in the SrIrO 3 (SIO)/Ni 81 Fe 19 (Py) bilayer. The results reveal that the SOT efficiency is strongly related to the octahedral rotation around the in-plane axes of the single-crystal SIO. By modulating the epitaxial strain using different substrates, the SOT efficiency can be remarkably improved from 0.15 to 1.45. This 10-fold enhancement of SOT efficiency suggests that modulating the epitaxial strain is an efficient approach to control the SOT efficiency in complex oxide-based heterostructures. Our work may have the potential to advance the application of complex oxides in energy-efficient spintronic devices.

Published
2024
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