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Photolithography and two-step inductively coupled plasma (ICP) etching method is applied to develop equilateral-triangle-resonator (ETR) lasers with an output waveguide joined at one vertex of the resonator on (100) GaInAsP-InP wafers. The features of the spectra are described in depth and the observed mode distribution is in agreement with the hypothetical outcomes.

4H-SiC junction barrier Schottky (JBS) diodes with a high-temperature annealed resistive termination extension (HARTE) are designed, fabricated and characterized in this work. The differential specific on-state resistance of the device is as low as 3.64 mΩ·cm2 with a total active area of 2.46 × 10−3 cm2. Ti is the Schottky contact metal with a Schottky barrier height of 1.08 V and a low onset voltage of 0.7 V. The ideality factor is calculated to be 1.06. Al implantation annealing is performed at 1250°C in Ar, while good reverse characteristics are achieved. The maximum breakdown voltage is 1000 V with a leakage current of 9 × 10−5 A on chip level. These experimental results show good consistence with the simulation results and demonstrate that high-performance 4H-SiC JBS diodes can be obtained based on the double HARTE structure. [ABSTRACT FROM AUTHOR]

An ultracompact, low-loss, and broad-band corner mirror, based on photonic crystals, is investigated in this paper. Based on the theoretical analysis of the loss mechanism, the boundary layers of the photonic crystal region are revised to improve the extra losses, and the transmission characteristics are evaluated by using the 3-D finite-difference time-domain method. The device with optimized structure was fabricated on silicon-on-insulator substrate by using electron-beam lithography and inductively coupled plasma etching. The measured extra losses are about 1.1±0.4 dB per corner mirror for transverse-electronic polarization for the scanning wavelength range of 1510–1630 nm. Dimensions of the achieved PC corner mirror are less than 7 × 7 μm2, which are only about one tenth of conventional wave-guide corner mirrors. [ABSTRACT FROM AUTHOR]

Using lateral phase change random access memory (PCRAM) for demonstration, we report a self-aligned process to fabricate a metal electrode-quantum dot(QD)/nanowire(NW)-metal electrode structure. Due to the good confinement and coupling between the Ge2Sb2Te5 (GST) QD and the tungsten electrodes, the device shows a threshold current and voltage as small as 2.50 &mgr;A and 1.08 V, respectively. Our process is highlighted with good controllability and repeatability with 100% yield, making it a promising fabrication process for nanoelectronics. [ABSTRACT FROM AUTHOR]

Equilateral-triangle-resonator (ETR) microlasers with an output waveguide connected to one of the vertices of the ETR are suitable to be a light source for photonic integrated circuits. InP-GaInAsP ETR lasers with side length from 10 to 30 mum and the output-waveguide width of 1 or 2 mum are fabricated using standard photolithography and inductively coupled-plasma etching techniques. Continuous-wave electrically injected 1520-nm ETR laser with 20-m sides is realized with the maximum output power 0.17 and 0.067 mW and the threshold current 34 and 43 mA at 290 K and 295 K, respectively. [ABSTRACT FROM PUBLISHER]