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High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions.
- Source :
- Chinese Physics B; Sep2013, Vol. 22 Issue 9, p097302-097307, 6p
- Publication Year :
- 2013
-
Abstract
- 4H-SiC junction barrier Schottky (JBS) diodes with a high-temperature annealed resistive termination extension (HARTE) are designed, fabricated and characterized in this work. The differential specific on-state resistance of the device is as low as 3.64 mΩ·cm<superscript>2</superscript> with a total active area of 2.46 × 10<superscript>−3</superscript> cm<superscript>2</superscript>. Ti is the Schottky contact metal with a Schottky barrier height of 1.08 V and a low onset voltage of 0.7 V. The ideality factor is calculated to be 1.06. Al implantation annealing is performed at 1250°C in Ar, while good reverse characteristics are achieved. The maximum breakdown voltage is 1000 V with a leakage current of 9 × 10<superscript>−5</superscript> A on chip level. These experimental results show good consistence with the simulation results and demonstrate that high-performance 4H-SiC JBS diodes can be obtained based on the double HARTE structure. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 16741056
- Volume :
- 22
- Issue :
- 9
- Database :
- Complementary Index
- Journal :
- Chinese Physics B
- Publication Type :
- Academic Journal
- Accession number :
- 94287956
- Full Text :
- https://doi.org/10.1088/1674-1056/22/9/097302