1. Simulation Study: The Impact of Structural Variations on the Characteristics of a Buried-Channel-Array Transistor (BCAT) in DRAM.
- Author
-
Sun, Minjae, Baac, Hyoung Won, and Shin, Changhwan
- Subjects
TRANSISTORS ,ROAD construction ,THRESHOLD voltage ,COMPUTER-aided design ,FINS (Engineering) - Abstract
As the physical dimensions of cell transistors in dynamic random-access memory (DRAM) have been aggressively scaled down, buried-channel-array transistors (BCATs) have been adopted in industry to suppress short channel effects and to achieve a better performance. In very aggressively scaled-down BCATs, the impact of structural variations on the electrical characteristics can be more significant than expected. Using a technology computer-aided design (TCAD) tool, the structural variations in BCAT (e.g., the aspect ratio of the BCAT recess-to-gate length, BCAT depth, junction depth, fin width, and fin fillet radius) were simulated to enable a quantitative understanding of its impact on the device characteristics, such as the input/output characteristics, threshold voltage, subthreshold swing, on-/off-current ratio, and drain-induced barrier lowering. This work paves the road for the design of a variation-robust BCAT. [ABSTRACT FROM AUTHOR]
- Published
- 2022
- Full Text
- View/download PDF