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Simulation Study: The Impact of Structural Variations on the Characteristics of a Buried-Channel-Array Transistor (BCAT) in DRAM
- Source :
- Micromachines, Vol 13, Iss 9, p 1476 (2022)
- Publication Year :
- 2022
- Publisher :
- MDPI AG, 2022.
-
Abstract
- As the physical dimensions of cell transistors in dynamic random-access memory (DRAM) have been aggressively scaled down, buried-channel-array transistors (BCATs) have been adopted in industry to suppress short channel effects and to achieve a better performance. In very aggressively scaled-down BCATs, the impact of structural variations on the electrical characteristics can be more significant than expected. Using a technology computer-aided design (TCAD) tool, the structural variations in BCAT (e.g., the aspect ratio of the BCAT recess-to-gate length, BCAT depth, junction depth, fin width, and fin fillet radius) were simulated to enable a quantitative understanding of its impact on the device characteristics, such as the input/output characteristics, threshold voltage, subthreshold swing, on-/off-current ratio, and drain-induced barrier lowering. This work paves the road for the design of a variation-robust BCAT.
Details
- Language :
- English
- ISSN :
- 13091476 and 2072666X
- Volume :
- 13
- Issue :
- 9
- Database :
- Directory of Open Access Journals
- Journal :
- Micromachines
- Publication Type :
- Academic Journal
- Accession number :
- edsdoj.70a0a421c1024236ba608d41dc3b8077
- Document Type :
- article
- Full Text :
- https://doi.org/10.3390/mi13091476