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1. Hole Doping Effects on Physical Properties of the Layered Antiferromagnetic Insulator (LaO)MnPn (Pn=P, As, Sb)

Author

Atsushi Higashiya, Shin Imada, Kouichi Takase, Toshiharu Kadono, and Akito Naito

Subjects
Materials science, Electronic correlation, Condensed matter physics, layered Mn oxypnictide, Mott insulator, Doping, Insulator (electricity), Physics and Astronomy(all), electron correlation, Metal, Oxypnictide, visual_art, visual_art.visual_art_medium, Antiferromagnetism, Pnictogen
Abstract

We have investigated an insulating origin of the layered Mn oxypnictide (LaO)MnPn with half-filled Mn 3 d bands by choosing pnictogen atoms from P to Sb and introduction of hole carriers. Metallic states are found in (LaO)MnAs and (LaO)MnSb at higher hole doping.

Published
2015

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