Hole Doping Effects on Physical Properties of the Layered Antiferromagnetic Insulator (LaO)MnPn (Pn=P, As, Sb)

Authors :: Atsushi Higashiya
Shin Imada
Kouichi Takase
Toshiharu Kadono
Akito Naito
Source :: Physics Procedia. 75:455-459
Publication Year :: 2015
Publisher :: Elsevier BV, 2015.
Abstract: We have investigated an insulating origin of the layered Mn oxypnictide (LaO)MnPn with half-filled Mn 3 d bands by choosing pnictogen atoms from P to Sb and introduction of hole carriers. Metallic states are found in (LaO)MnAs and (LaO)MnSb at higher hole doping.

Subjects :: Materials science
Electronic correlation
Condensed matter physics
layered Mn oxypnictide
Mott insulator
Doping
Insulator (electricity)
Physics and Astronomy(all)
electron correlation
Metal
Oxypnictide
visual_art
visual_art.visual_art_medium
Antiferromagnetism
Pnictogen

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