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The conditions have been established for detection and recognition of rotation domains in α-Ga2O3/α-Al2O3 (0001) thin films in the presence of other polymorphs. The domains are visualized by high-resolution transmission electron microscopy. Their structural characteristics are determined by preparing cross-sectional and plan-view specimens, choosing the correct diffraction conditions and proper imaging modes. As a result, the dimensions, the spatial distribution, the volume fraction and area fraction of the inclusions of domains have been determined. Keywords: structural defects, rotational domains, transmission electron microscopy, gallium oxide.

Structural features of the interface between a semipolar gallium nitride layer and buffer layer of aluminum nitride grown on a SiC/Si(001) template misoriented by an angle of 7 were studied by high-resolution transmission electron microscopy. The effect of interface morphology on the structural quality of the gallium nitride layer was revealed: faceted structure of the buffer layer surface reduces the threading dislocations density. Keywords: semipolar GaN, transmission electron microscopy, dislocation, Si(001) substrate