Back to Search Start Over

Topographic measurement of buried thin-film interfaces using a grazing resonant soft x-ray scattering technique.

Authors :
Gann, Eliot
Watson, Anne
Tumbleston, John R.
Cochran, Justin
Hongping Yan
Cheng Wang
Jaewook Seok
Chabinyc, Michael
Ade, Harald
Source :
Physical Review B: Condensed Matter & Materials Physics. Dec2014, Vol. 90 Issue 24, p245421-1-245421-9. 9p.
Publication Year :
2014

Abstract

The internal structures of thin films, particularly interfaces between different materials, are critical to system properties and performance across many disciplines, but characterization of buried interface topography is often unfeasible. In this work, we demonstrate that grazing resonant soft x-ray scattering (GRSoXS), a technique measuring diffusely scattered soft x rays from grazing incidence, can reveal the statistical topography of buried thin-film interfaces. By controlling and predicting the x-ray electric field intensity throughout the depth of the film and simultaneously the scattering contrast between materials, we are able to unambiguously identify the microstructure at different interfaces of a model polymer bilayer system. We additionally demonstrate the use of GRSoXS to selectively measure the topography of the surface and buried polymer-polymer interface in an organic thin-film transistor, revealing different microstructure and markedly differing evolution upon annealing. In such systems, where only indirect control of interface topography is possible, accurate measurement of the structure of interfaces for feedback is critically important. While we demonstrate the method here using organic materials, we also show that the technique is readily extendable to any thin-film system with elemental or chemical contrasts exploitable at absorption edges. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
10980121
Volume :
90
Issue :
24
Database :
Academic Search Index
Journal :
Physical Review B: Condensed Matter & Materials Physics
Publication Type :
Academic Journal
Accession number :
101093274
Full Text :
https://doi.org/10.1103/PhysRevB.90.245421