Back to Search
Start Over
Contactless electroreflectance, in the range of 20 K<T<300 K, of freestanding wurtzite GaN prepared by hydride-vapor-phase epitaxy.
- Source :
-
Journal of Applied Physics . 7/15/2003, Vol. 94 Issue 2, p899. 5p. 2 Charts, 4 Graphs. - Publication Year :
- 2003
-
Abstract
- We have performed a detailed contactless electroreflectance study of the interband excitonic transitions on both the Ga and N faces of a 200-μm-thick freestanding hydride-vapor-phase-epitaxy grown wurtzite GaN sample with low defect concentration in the temperature range between 20 and 300 K. The transition energies of the A, B, and C excitons and broadening parameters of the A and B excitons have been determined by least-square fits to the first derivative of a Lorentzian line shape. The energy positions and separations of the excitonic transitions in the sample reveal the existence of residual strain. At 20 K the broadening parameter of A exciton deduced for the Ga (5×10[SUP5] dislocation cm[SUP-2] and N (1×10[SUP7] dislocation cm[SUP-2]) faces are 3 and 7 meV, respectively, indicating a lower defect concentration on the former face. The parameters that describe the temperature dependence of the interband transition energies of the A, B, and C excitons as well as the broadening function of the A and B features are evaluated. The results from an analysis of the temperature dependence of the broadening function of excitons A and B indicate that GaN exhibits a very large exciton-phonon coupling. [ABSTRACT FROM AUTHOR]
- Subjects :
- *GALLIUM
*NITROGEN
*EPITAXY
*TEMPERATURE
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 94
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 10113134
- Full Text :
- https://doi.org/10.1063/1.1582230