Effect of reset voltage polarity on the resistive switching region of unipolar memory.

In this study, investigation of the unipolar resistive switching (RS) of InGaZnO film indicates that the reset voltage polarity can strongly affect the RS region. The dependence of the RS characteristics on the top electrode (Pt, Al, or Cu) was investigated. Asymmetrical electrodes (Cu/InGaZnO/Al) were chosen and the dependence of the RS parameters (e.g., high and low resistance states, set and reset voltages) on these two diverse electrodes can provide two indicators to trace the location of the RS region. The RS region is usually located near the anode when the applied set and reset voltages have the same polarity. In comparison, when the reset voltage has the opposite polarity to the set voltage, the RS region prefers to be located near the anode of the reset process rather than the cathode (which is used as the anode in the set process), indicating the movement of the RS region during the reset process. With the aid of joule heating, oxygen ions can overcome the energy barrier during the reset process under small voltage, resulting in the CFs restructuring and having the inverse shape, which is responsible for the drift mechanism of the RS region. [ABSTRACT FROM AUTHOR]