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An Accurate Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs.
- Source :
-
IEEE Transactions on Electron Devices . Dec2015, Vol. 62 Issue 12, p4333-4339. 7p. - Publication Year :
- 2015
-
Abstract
- In this paper, an accurate compact model based on physical mechanisms for dual-gate bilayer graphene FETs is presented. This model is developed based on the 2-D density of states of bilayer graphene and is implemented in Verilog-A. Furthermore, physical equations describing the behavior of the source and drain access regions under back-gate bias are proposed. The accuracy of the developed large-signal compact model has been verified by comparison with measurement data from the literature. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 62
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 111177452
- Full Text :
- https://doi.org/10.1109/TED.2015.2487243