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Plasma-assisted ohmic contact for AlGaN/GaN heterostructure field-effect transistors.
- Source :
-
Semiconductor Science & Technology . Mar2016, Vol. 31 Issue 3, p1-1. 1p. - Publication Year :
- 2016
-
Abstract
- An Al-based ohmic process assisted by an inductively coupled plasma (ICP) recess treatment is proposed for AlGaN/GaN heterostructure field-effect transistors (HFETs) to realize ohmic contact, which is only needed to anneal at 500 °C. The recess treatment was done with SiCl4 plasma with 100 W ICP power for 20 s and annealing at 575 °C for 1 min. Under these conditions, contact resistance of 0.52 Ωmm was confirmed. To suppress the ball-up phenomenon and improve the surface morphology, an Al/TiN structure was also fabricated with the same conditions. The contact resistance was further improved to 0.30 Ωmm. By using this plasma-assisted ohmic process, a gate-first HFET was fabricated. The device showed high drain current density and high transconductance. The leakage current of the TiN-gate device decreased to 10−9 A, which was 5 orders of magnitude lower than that of the device annealed at 800 °C. The results showed that the low-temperature ohmic contact process assisted by ICP treatment is promising for the fabrication of gate-first and self-aligned gate HFETs. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 02681242
- Volume :
- 31
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- Semiconductor Science & Technology
- Publication Type :
- Academic Journal
- Accession number :
- 113218274
- Full Text :
- https://doi.org/10.1088/0268-1242/31/3/035015