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Electrical Properties of Metal-Induced Laterally Crystallized p-Type LTPS-TFT With High- $\kappa $ ZrTiO4 Gate Dielectric Featuring Low Equivalent-Oxide-Thickness.
- Source :
-
IEEE Transactions on Electron Devices . Jun2016, Vol. 63 Issue 6, p2391-2397. 7p. - Publication Year :
- 2016
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Abstract
- In this paper, we investigated the electrical properties of a metal-induced laterally crystallized (MILC) p-type low-temperature polycrystalline-silicon thin-film transistor (LTPS-TFT) using high- \kappa ZrTiO4 (ZTO) gate dielectric. With the orthorhombic-ZTO (111) preferred crystal system, the gate-stack with a low equivalent-oxide-thickness (EOT) of 4.1 nm and high permittivity of 50 achieve high dielectric quality by showing a low interfacial trap density ( N_{\mathrm{ it}}) of 3.5\times 10^{11} cm ^-2 eV ^-1 near the mid-gap traps. From these results, the MILC p-type LTPS-TFT exhibits a record subthreshold slope of 80 mV/decade, which is attributed to the low N\mathrm{ it} and EOT. In addition, the high-hole field-effect mobility of 250 cm2/Vsec at 1 MV/cm and high I\mathrm{\scriptscriptstyle ON}/I\mathrm{\scriptscriptstyle OFF} ratio of 1.5\times 10^8 were observed. From the reliability evaluation, the degradation in the positive-bias stress, hot-carrier stress, and self-heating stress was dramatically superior to the conventional LTPS-TFT with SiO2 gate dielectric. These results confirm that the ZTO dielectric holds a great potential for the next-generation LTPS-TFTs. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 63
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 115559781
- Full Text :
- https://doi.org/10.1109/TED.2016.2544862