Back to Search
Start Over
Novel Boosted-Voltage Sensing Scheme for Variation-Resilient STT-MRAM Read.
- Source :
-
IEEE Transactions on Circuits & Systems. Part I: Regular Papers . Oct2016, Vol. 63 Issue 10, p1652-1660. 9p. - Publication Year :
- 2016
-
Abstract
- This paper proposes a novel boosted voltage sensing (BVS) scheme that substantially improves the resiliency of STT-MRAMs against variations in read accesses based on bitline voltage sensing, and on a wide range of voltages. The BVS scheme mitigates the impact of variations in the senseamp and the reference voltage generation, and is based on switched-capacitor voltage boosters. The related area-performance-energy-resiliency tradeoff is explored, and design guidelines are derived to improve the read margin at minimum overhead. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 15498328
- Volume :
- 63
- Issue :
- 10
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Circuits & Systems. Part I: Regular Papers
- Publication Type :
- Periodical
- Accession number :
- 118500175
- Full Text :
- https://doi.org/10.1109/TCSI.2016.2582203