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Corrigendum to “A subgap density of states modeling for the transient characteristics in oxide-based thin-film transistors” [Microelectron. Reliab. 60 (2016) 67–69].
- Source :
-
Microelectronics Reliability . Dec2016, Vol. 67, p159-159. 1p. - Publication Year :
- 2016
Details
- Language :
- English
- ISSN :
- 00262714
- Volume :
- 67
- Database :
- Academic Search Index
- Journal :
- Microelectronics Reliability
- Publication Type :
- Academic Journal
- Accession number :
- 120147299
- Full Text :
- https://doi.org/10.1016/j.microrel.2016.09.003