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Kinetics of epitaxial growth of Si and SiGe films on (1 1 0) Si substrates
- Source :
-
Applied Surface Science . Mar2004, Vol. 224 Issue 1-4, p188. 5p. - Publication Year :
- 2004
-
Abstract
- The epitaxial growth of Si and SiGe layers on (1 1 0) Si substrates using UHV-CVD is studied with comparing that on (1 0 0) substrates. It is revealed that, while the growth rate on (1 1 0) surfaces is quite lower than that on (1 0 0) surfaces, the Ge content of SiGe is the same between (1 0 0) and (1 1 0) surfaces, meaning that the ratio of decomposition yields of source molecules for Si and Ge are same in both the (1 0 0) and (1 1 0) substrates. This characteristic is expected to lead to the epitaxial growth of SiGe films with uniform Ge content over the three-dimensional patterned structure, which can be utilized for vertical FET and Fin-FETs. Actually, it has been experimentally confirmed that the SiGe films grown over trench structures has a uniform Ge content. [Copyright &y& Elsevier]
- Subjects :
- *EPITAXY
*GROWTH rate
*SILICON
*GERMANIUM
Subjects
Details
- Language :
- English
- ISSN :
- 01694332
- Volume :
- 224
- Issue :
- 1-4
- Database :
- Academic Search Index
- Journal :
- Applied Surface Science
- Publication Type :
- Academic Journal
- Accession number :
- 12236625
- Full Text :
- https://doi.org/10.1016/j.apsusc.2003.08.097