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Investigation of Robustness Capability of −730 V P-Channel Vertical SiC Power MOSFET for Complementary Inverter Applications.
- Source :
-
IEEE Transactions on Electron Devices . Oct2017, Vol. 64 Issue 10, p4219-4225. 7p. - Publication Year :
- 2017
-
Abstract
- In this paper, a p-channel vertical 4H-silicon carbide (SiC) MOSFET (SiC p-MOSFET) has been fabricated successfully for the first time as a potential candidate for the complementary inverter application. The static characteristics and the robustness, including short circuit and avalanche capabilities of the p-MOSFET, are experimentally tested. Moreover, the comparison between the p-MOSFET and similar rating n-MOSFET is carried out. The short-circuit capability is 15% higher than that of the n-channel MOSFET. Furthermore, this paper also provides the physical insights into the failure mechanism during the short-circuit transient of the p- and n-MOSFET. Meanwhile, an electro-thermal analytical model is proposed to explain the thermal distribution during this transient. Last, the avalanche withstand time of the fabricated SiC p-MOSFET is experimentally demonstrated to be 27% higher than that of the n-channel one. It is concluded that the SiC p-MOSFET could be a competitive power switch applicable for high-frequency complementary inverters. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 64
- Issue :
- 10
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 125755838
- Full Text :
- https://doi.org/10.1109/TED.2017.2742542