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Study of Electron Traps Associated With Oxygen Superlattices in n-Type Silicon.
- Source :
-
Physica Status Solidi (C) . Dec2017, Vol. 14 Issue 12, pn/a-N.PAG. 5p. - Publication Year :
- 2017
-
Abstract
- In this paper, the deep levels found by Deep-Level Transient Spectroscopy in Si-O superlattices (SLs) on n-type silicon are reported. Samples have been grown with one, two or five silicon-oxygen layers, separated by 3 nm of silicon. A Cr Schottky barrier (SB) is thermally evaporated on top of the SL. Similar as for p-type silicon, no deep levels have been found for a bias pulse in depletion, while a broad distribution of electron traps shows up when pulsing into forward bias. At the same time, these bands are absent in a zero SL reference sample. Similar as for the p-type results, the trap filling of the electron states exhibits a logarithmic capture. The possible origin of this slow filling will be discussed. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 18626351
- Volume :
- 14
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- Physica Status Solidi (C)
- Publication Type :
- Academic Journal
- Accession number :
- 126766326
- Full Text :
- https://doi.org/10.1002/pssc.201700136