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Utilizing SiGe HBT Power Detectors for Sensing Single-Event Transients in RF Circuits.

Authors :
Ildefonso, Adrian
Coen, Christopher T.
Fleetwood, Zachary E.
Tzintzarov, George N.
Wachter, Mason T.
Khachatrian, Ani
Mcmorrow, Dale
Warner, Jeffrey H.
Paki, Pauline
Cressler, John D.
Source :
IEEE Transactions on Nuclear Science. Jan2018, Vol. 65 Issue 1, p239-248. 10p.
Publication Year :
2018

Abstract

This paper demonstrates the use of an RF power detector to sense the occurrence of single-event transients (SETs) in RF circuits and systems. The detector was connected to a low-noise amplifier (LNA), and the relationship between the detector output and the LNA transients was investigated via two-photon absorption, pulsed-laser testing, together with mixed-mode TCAD simulations. The response of the detector shows a strong correlation with the RF power of the generated SET. An analytical expression for the detector output is derived and utilized to fit the data. The effects of parameters affecting circuit performance on the detector response to SETs are explored using calibrated TCAD mixed-mode simulations, and design tradeoffs are presented. Finally, a solution to distinguish between transients generated in the detector from those generated in the circuit being monitored is proposed and verified in simulation. The use of detectors to monitor SETs in RF systems could lead to judicious deployment of detection-driven SET mitigation techniques. [ABSTRACT FROM PUBLISHER]

Details

Language :
English
ISSN :
00189499
Volume :
65
Issue :
1
Database :
Academic Search Index
Journal :
IEEE Transactions on Nuclear Science
Publication Type :
Academic Journal
Accession number :
127490811
Full Text :
https://doi.org/10.1109/TNS.2017.2772924