Back to Search
Start Over
Microwave Characterization of Ba-Substituted PZT and ZnO Thin Films.
- Source :
-
IEEE Transactions on Ultrasonics Ferroelectrics & Frequency Control . May2018, Vol. 65 Issue 5, p881-888. 8p. - Publication Year :
- 2018
-
Abstract
- The microwave dielectric properties of (Ba0.1Pb0.9)(Zr0.52Ti0.48)O3 (BPZT) and ZnO thin films with thicknesses below 2~\mu \textm were investigated. No significant dielectric relaxation was observed for both BPZT and ZnO up to 30 GHz. The intrinsic dielectric constant of BPZT was as high as 980 at 30 GHz. The absence of strong dielectric dispersion and loss peaks in the studied frequency range can be linked to the small grain diameters in these ultrathin films. [ABSTRACT FROM AUTHOR]
- Subjects :
- *ZINC oxide
*II-VI semiconductors
*CAPACITORS
*ELECTRODES
*PIEZOELECTRIC materials
Subjects
Details
- Language :
- English
- ISSN :
- 08853010
- Volume :
- 65
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Ultrasonics Ferroelectrics & Frequency Control
- Publication Type :
- Academic Journal
- Accession number :
- 129480980
- Full Text :
- https://doi.org/10.1109/TUFFC.2018.2812424