Back to Search
Start Over
Effect of Green Quantum Well Number on Properties of Green GaN-Based Light-Emitting Diodes.
- Source :
-
Chinese Physics Letters . Aug2018, Vol. 35 Issue 8, p1-1. 1p. - Publication Year :
- 2018
-
Abstract
- InGaN-based green light-emitting diodes (LEDs) with different green quantum well numbers grown on Si (111) substrates by metal organic chemical vapor deposition are investigated. It is observed that V-shaped pits appear in the AFM images with the green quantum well number increasing from 5 to 9, and results in larger reverse-bias leakage current. Meanwhile, in the case of the sample with the number from 5 to 7 then to 9, the external quantum efficiency increases firstly, and then decreases. These phenomena may be related to the size of V-shaped pits in the active area and the distribution of electrons and holes in the active area caused by V-shaped pits. The optimal number of green quantum wells is determined to be 7. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 0256307X
- Volume :
- 35
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- Chinese Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 131195506
- Full Text :
- https://doi.org/10.1088/0256-307X/35/8/087302