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Evolution, Challenges and Attributes of Near Micron Sized TaN Resistors for Mixed Signal IC Applications From a Lithography Perspective.
- Source :
-
IEEE Transactions on Semiconductor Manufacturing . Nov2018, Vol. 31 Issue 4, p460-466. 7p. - Publication Year :
- 2018
-
Abstract
- In this paper, the evolution of various lithographic processes aimed at fabricating robust tantalum nitride (TaN) resistors in GaAs-based BiFET and BiHEMT technologies are discussed in detail. Such approaches include the common image reverse photograph process (via amine poisoning) using a positive tone resist, the use of a chemically amplified negative tone resist, and also straight patterning of a positive tone resist. The aforementioned approaches were found to have their own unique challenges as it applied to printing robust TaN-based resistors approaching nearly a micron in width which is needed for high density mixed signal designs. We will explore many of these challenges in detail for the various lithography schemes. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 08946507
- Volume :
- 31
- Issue :
- 4
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Semiconductor Manufacturing
- Publication Type :
- Academic Journal
- Accession number :
- 132478825
- Full Text :
- https://doi.org/10.1109/TSM.2018.2870569