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Bandlike and localized states of extended defects in n-type In0.53Ga0.47As.
- Source :
-
Journal of Applied Physics . 2018, Vol. 124 Issue 16, pN.PAG-N.PAG. 13p. 4 Diagrams, 2 Charts, 9 Graphs. - Publication Year :
- 2018
-
Abstract
- In0.53Ga0.47As p + n diodes with different densities of extended defects have been analyzed by detailed structural and electrical characterization. The defects have been introduced during Metal-Organic Vapor Phase Epitaxy (MOVPE) growth by using a lattice-mismatched layer on a semi-insulating InP or GaAs substrate. The residual strain and indium content in the n-type In0.53Ga0.47As layer have been determined by high-resolution X-ray diffraction, showing nearly zero strain and a fixed indium ratio of 0.53. The deep levels in the layer have been characterized by Deep Level Transient Spectroscopy. The mean value of electron traps at 0.17 ± 0.03 eV below the conduction band minimum EC is assigned to the "localized" states of α 60° misfit dislocations; another broad electron trap with mean activation energies between EC− 0.17 ± 0.01 and 0.39 ± 0.04 eV, is identified as threading dislocation segments with "band-like" states. A high variation of the pre-exponential factor KT by 7 orders of magnitude is found for the latter when changing the filling pulse time, which can be explained by the coexistence of acceptor-like and donor-like states in the core of split dislocations in III-V materials. Furthermore, two hole traps at EV+ 0.42 ± 0.01 and EV+ 0.26 ± 0.13 eV are related to the double acceptor of the Ga(In) vacancy (VGa/In3-/2-) and 60° β misfit dislocations, respectively. Finally, the dislocation climbing mechanism and the evolution of the antisite defects AsGa/In are discussed for n-type In0.53Ga0.47As. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 124
- Issue :
- 16
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 132787178
- Full Text :
- https://doi.org/10.1063/1.5046827